Digitally tunable optical filters using arrayed-waveguide grating(AWG) multiplexers and optical switches

Two novel configurations for digitally tunable optical filters based on arrayed-waveguide grating (AWG) multiplexers are described in detail with emphasis on the connection of the AWG multiplexer and optical switches. Performance comparisons show that conventional configurations are disadvantaged by the switch size required and loss imbalance among the optical frequency-division-multiplexed (FDM) channels; the proposed configurations require only O(√(N)) switch elements to select one of N FDM channels, and the loss imbalance is lower by up to 75% in decibel     

A new lateral MOS-gated thyristor with controlling base-current

A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P⁺ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor     

A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices     

Modulation and Equalisation Considerations for High Performance Radio LANs

The European Telecommunications Standards Institute (ETSI) has recently defined a European standard for a high performance radio LAN (known as HIPERLAN). To operate as wired LAN replacements, these systems will operate at 5.2 GHz and support instantaneous bit rates of just under 24 Mb/s. To counteract the time dispersive nature of the indoor radio channel, the use of adaptive equalisation is suggested. In this paper a number of possible modulation and equalisation techniques are presented and, in particular, the Bit Error Rate (BER) performance of quasi-coherent GMSK combined with Decision Feedback Equalisation is explored through computer simulation. The trade off between symbol spaced and fractionally spaced equalisation is considered together with the importance of feedfoward and feedback synchronisation to the channel's power delay profile. The paper also includes a comparison of the RLS and LMS based training algorithms and compares the modem developed under the ESPRIT III LAURA project with that specified in HIPERLAN.The application of dual antenna diversity is investigated and its impact on the number of received error free data packets obtained as a function of signal leval and rms delay spread. The use of such diversity is shown to greatly improve the BER performance of a HIPERLAN modem. The problem of frequency offset is considered and modifications are proposed to the HIPERLAN frame structure to improve the receiver's tolerance to such errors. Important practical issues such as frame and symbol synchronisation, frequency offset correction and hardware implementation are discussed from both the LAURA and HIPERLAN viewpoint.     

Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.     

The lattice dynamics of the Fe(tpa) (NCS)2 complex : light-induced excited spin state trapping effect

A light-induced excited spin state trapping (LIESST) experiment for a thermal gradual spin crossover complex, Fetris (2-pyridylmethyl) amine(NCS)2 or Fe(tpa) (NCS)2, was attempted for the first time. The high spin (HS) state after light inducement stayed metastable over a period of days without relaxation at 10 K. Intersystem relaxation from a high to a low spin (LS) complex occurred at 50 K after bleaching at 10 K. Investigation of the Mossbauer spectra of the LIESST and relaxation experiment indicated that the Debye–Waller factor was a correlation parameter of the HS fraction and that the co-operative effect played a role in the relaxation process for such a solid compound. This revised version was published online in November 2006 with corrections to the Cover Date.     

Wave-oriented signal processing of dispersive time-domainscattering data

Phase-space data processing is receiving increased attention because or its potential for furnishing new discriminants relating to classification and identification of targets and other scattering environments. Primary emphasis has been on time-frequency processing because of its impact on transient, especially wideband, short-pulse excitations. Here, we investigate the windowed Fourier transform, the wavelet transform, and model based superresolution algorithms within the context of a fully quantified and calibrated test problem investigated by us previously: two-dimensional (2-D) short-pulse plane wave scattering by a finite periodic array of perfectly conducting coplanar flat strips. Because the forward problem has been fully calibrated and parametrized, some quantitative measures can be assigned with respect to the tradeoffs of these time-frequency algorithms, yielding tentative performance assessments of the tested processing algorithms     

Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continuum quantum-well infrared photodetectors

We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques.     

Quadratic interpolation for image resampling

Nearest-neighbor, linear, and various cubic interpolation functions are frequently used in image resampling. Quadratic functions have been disregarded largely because they have been thought to introduce phase distortions. This is shown not to be the case, and a family of quadratic functions is derived. The interpolating member of this family has visual quality close to that of the Catmull-Rom cubic, yet requires only 60% of the computation time.     

Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures

Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface. Fiz. Tekh. Poluprovodn. 31, 1246–1248 (October 1997)