A theoretical and numerical analysis of the measured equation ofinvariance

The measured equation of invariance (MEI) has been previously introduced to efficiently and accurately handle the boundary truncation for finite methods. The present authors give a theoretical analysis that provides several important insights into the capabilities of the MEI. From the numerical study, they can explain why the MEI works better than one would expect. Both the theoretical and the numerical analyses demonstrate that the accuracy of the solution is dependent on the electrical size of the geometry as well as the distance between the mesh boundary and the geometry. From the analysis, the authors propose a new set of metrons that is less sensitive to the excitation than the previously proposed sinusoidal metrons     

Scattering by spherically stratified microwave lens antennas

A comprehensive treatment of scattering by sources in the region of a spherically stratified object composed of discrete shells is presented and compared with measured results. The work encompasses the developments necessary for a thorough understanding of the focusing mechanism of a spherical lens. The method used is a modal technique that employs separation of variables in order to determine an eigenfunction representation of the incident and scattered fields. This formulation provides the Green's function required for the calculation of the scattering from a multiple layered sphere excited by an infinitesimal current element. The algorithm allows both near- and far-field predictions. The scattering by more complicated source field distributions is modeled by applying superposition with the appropriate coordinate transformations. From a practical standpoint, the present analysis allows the limitations of spherical lenses to be determined while providing the information required to optimize the lens design. A system was built based on the new design data, and its measured radiation characteristics are compared to the theoretical predictions. Excellent agreement is observed in most cases     

A partitioning technique for the finite element solution ofelectromagnetic scattering from electrically large dielectric cylinders

A finite element partitioning scheme has been developed to reduce the computational costs of modeling electrically large geometries. In the partitioning scheme, the cylinder is divided into many sections. The finite element method is applied to each section independent of the other sections, and then the solutions in each section are coupled through the use of the tangential field continuity conditions between adjacent sections. Since the coupling matrix is significantly smaller than the original finite element matrix, it is expected that both the CPU time and memory costs can be significantly reduced. The partitioning scheme is coupled to the bymoment method to account for the boundary truncation. Numerical results are presented to demonstrate the efficiency and accuracy of the method     

Fundamental quantum 1/f noise in semiconductor devices

The quantum 1/f noise theory has been developed in the last two decades and has been applied to 1/f noise suppression in various electronic devices. This theory derives fundamental quantum fluctuations present in the elementary processes of physics at the level of the quantum mechanical cross sections and process rates. This paper demonstrates the basic simplicity of the theory with an elementary physical derivation followed by a short derivation of the conventional quantum 1/f effect in second quantization, for an arbitrary number of particles N defining the scattered current in the final state. A new derivation of the coherent quantum 1/f effect is also included. No adjustable parameters are present in the quantum 1/f theory. Practical applications to semiconductor materials, p-n junctions, SQUID's and quartz resonators are presented. Optimal design principles based on the quantum 1/f theory are described and explained     

Coupled electrothermal modeling of microheaters using SPICE

In this paper,,we report a novel simulation approach that computes both the transient and steady state electrothermal behavior in integrated circuit (IC) compatible thermally isolated microheaters. The resulting distribution of heat, current density and temperature, as well as the electrical terminal behavior have been obtained for realistic device structures. The results are based on a two-dimensional solution of the coupled system of partial differential equations that govern both electrical and heat transport in the device. Unlike standard numerical approaches for coupled systems, our technique is based on the behavioural models, available in most commercial circuit simulators (e.g., HSPICE), that allow synthesis of complex, nonlinear, and coupled circuit elements. The simulation results are in excellent agreement with measurement data of steady state and transient terminal characteristics, obtained under conditions of vacuum. We note that this modeling approach allows concurrent simulation (and subsequent optimization) of the performance of both the control electronics as well as the thermal element(s), within the same IC design environment     

Overgrown silicon PBT's: calculations and measurements

The device parameters of overgrown silicon permeable base transistors (PBT's) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT's. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity-current-gain frequencies f_T over 50 GHZ. In addition, PBT's with buried monocrystalline CoSi₂-gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n-type Si(100). Measurements revealed a transconductance of 70 mS/mm and a f _T value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement     

On the hot-carrier-induced post-stress interface trap generation inn-channel MOS transistors

A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress D_it-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior     

Drain structure optimization for highly reliable deep submicrometern-channel MOSFET

A guideline for n^- fully gate overlapped (FOLD) structure design optimization has been studied. From the viewpoint of reliability, the greatest reduction in substrate current directly leads to the most reliable n^- design for the FOLD structure. The current path modulation phenomenon due to the trapped charge at the n ^- extension region dominates the hot-carrier induced characteristics change for conventional lightly doped drain (LDD) structure with side-wall spacer. This phenomenon is minimized in the FOLD structure due to its higher controllability of the gate electrode than the LDD structure at the n^- extension region. Furthermore, it was also confirmed that the 0.3 μm optimized FOLD structure can achieve high circuit performance at 3.3 V operation, maintaining hot-carrier resistance     

Understanding the role of self-esteem in managing communicationquality

This paper presents an overview of the ways in which self-esteem operates in employee communication. As they develop effective communication skills, managers need to consider the consequence of stress on employee self-esteem and performance. Persons with high self-esteem are less likely to experience workplace demands as stressful and are better able to respond effectively to those demands. This paper discusses the relationship among self-esteem, occupational stress, and communication quality, then recommends ways in which self-esteem can be enhanced through employee communication     

Introduction to the special section: professional communication inRussia

There is a rising interest within the world community in what is occurring in professional communication in Russia, and in the social and market opportunities that will appear there in the future. We live in a world in which the pace of change is more rapid than at any time in our history. The most important aspect of this change is the fact that we are making a transition to a democratic society at the same time as we are in the process of establishing the principles of a market economy. Russia is a country with enormous reserves of raw materials, vast territories, and rich intellectual resources. And now, as Russia is experiencing a painful transition to a market economy, the nation's economic potential becomes more and more dependent on the sophistication of its infrastructure. That is the reason why the information technologies and professional communication have become key factors of social progress. The Russian centers of research and industry are widely dispersed geographically, in such cities as Vladivostok, Irkutsk, Novosibirsk, Tomsk, Ekaterinburg, Saint Petersburg and Moscow. The last three or four years have seen a sharp increase in the demands for business information, electronic mail and communications for far-flung business and financial operations