步进式加热炉炉温优化设定模型及软件开发

针对线材厂步进式加热炉实际工况，提出了基于经验规则的炉温优化设定模型和在线自学习获取知识的思想，并以炉温优化设定模型为核心，开发出加热炉计算机控制系统的优化运行软件。     

Robot Pose Estimation in Unknown Environments by Matching 2D Range Scans

A mobile robot exploring an unknown environment has no absolute frame of reference for its position, other than features it detects through its sensors. Using distinguishable landmarks is one possible approach, but it requires solving the object recognition problem. In particular, when the robot uses two-dimensional laser range scans for localization, it is difficult to accurately detect and localize landmarks in the environment (such as corners and occlusions) from the range scans.In this paper, we develop two new iterative algorithms to register a range scan to a previous scan so as to compute relative robot positions in an unknown environment, that avoid the above problems. The first algorithm is based on matching data points with tangent directions in two scans and minimizing a distance function in order to solve the displacement between the scans. The second algorithm establishes correspondences between points in the two scans and then solves the point-to-point least-squares problem to compute the relative pose of the two scans. Our methods work in curved environments and can handle partial occlusions by rejecting outliers.     

二元光栅照明研究

采用部分相干成象理论对二元光机照明进行了较为详细的研究。分析了二元光栅照明对分辨力，焦，照明能量和照明均匀性的影响，并通过实验研究验证了二元光栅对分辨力和焦深有较大程度的提高，同时能量损失不大。     

含氨烷基聚硅氧烷的研究进展

对含氨烷基聚硅氧烷的研究进行综述，着重介绍含氨烷基聚硅氧烷的种类，性能特点，制备方法及应用等。     

表面稳定模式铁电液晶的电光特性测试

采用一种改进的高分子膜摩擦定向法成功地实现了表面稳定模式铁电液晶的光学双稳态，对比度大于１４０，响应时间达１００微秒。     

利用垂直阵列构作Cartesian认证码

利用垂直阵列构作了一类Cartesian认证码,计算了它们的参数,并且在编码规则按等概率分布选取时,成功的模仿攻击和成功的替换攻击概率也被算出。     

Mechanical alloying in the Al-Bi alloy system

Mechanical alloying (MA) was carried out to investigate the MA behaviour of the immiscible Al-10, 30 at % Bi alloys. After the MA processing, the Al and Bi were finely and homogeneously alloyed. The Bi crystallite size decreased to 25 nm and 30 nm in the Al-10 at % Bi and Al-30 at % Bi alloys, respectively. By increasing the MA time, the hardness increased up to a value of 80 H _v, which is larger than that obtained from the rule of mixtures. The lattice parameter of Bi decreased by about 0.27%, which shows the formation of a non-equilibrium hcp Bi super-saturated solid solution. The extended solubility of Al in Bi was 1.9% in the Al-30 at % Bi alloy. Due to the extended solubility, depression of the melting temperature of hcp Bi was confirmed in the mechanically alloyed Al-Bi alloys. The maximum depression in the temperature was about 10 K. The measured values corresponded well with those estimated from the extrapolation of the solidus line.     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

Temperature dependence study of two-dimensional electron gas effecton the noise performance of high frequency field effect transistors

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices