基于SiGe虚拟衬底的低场迁移率提升140%的应变Si沟道NMOS器件 Cui Wei(崔伟)1,2,Tang Zhaohuan(唐昭焕)2, Tan Kaizhou(谭开洲)2, Zhang Jing(张静)2,

本文研究了一种应变SiGe沟道的NMOS器件,通过调整硅帽层、SiGe缓冲层,沟道掺杂和Ge组分变化,并采用变能量硼注入形成P阱的方式,成功完成了应变NMOS器件的制作。测试结果表明应变的NMOS器件在低场(Vgs=3.5V, Vds=0.5V)条件下,迁移率极值提升了140%,而PMOS器件性能保持不变。文中对硅基应变增强机理进行了分析。并利用此NMOS器件研制了一款CMOS倒向器,倒向器特性良好, 没有漏电,高低电平转换正常。     

瑞利测风激光雷达接收机校准

介绍了直接探测瑞利测风激光雷达工作及风速反演的原理,说明了激光雷达接收机的内部结构及工作情况。为修正雷达接收机中分光片分束比、单光子计数器探测率等参数与设计值的偏差所导致的风速测量误差,提出了随光强变化比较两信号通道的计数值的接收机校准方案。实验测得了校准系数随信号通道信号强度的变化关系。在弱光下该系统两信号通道性能差异小于25%。在当前系统的标准具透过率条件和对称的风场扫描合成方式下,接收机校准只对系统透过率曲线和径向风速的测量有较大影响,对合成风场没有影响。     

硅纳米管结构和电子性质的第一性原理研究

基于密度泛函理论的第一性原理方法,在广义梯度近似下,研究了(5,0)和(5,5)硅纳米管结构和电子性质。计算结果表明:(5,0)管硅原子相邻键长波动范围为0.068 nm,大于(5,5)管的0.006 nm;通过对(5,0)管的分波态密度进行分析发现,其3s电子和2p电子能量分布在-13～3 eV,但2p电子集中分布在能量较高的-6～3 eV,出现了明显的sp3轨道杂化。同时对(5,0)和(5,5)硅纳米管最高占据轨道和最低未占据轨道的能隙进行了分析,发现两种管导电性能与结构的手性相关,锯齿型(5,0)管能带交叠具有明显的金属性,而扶手型(5,5)管能隙为0.151 eV是半导体纳米管。     

基于通用可编程IO口的摄像头总线接口设计与实现

该文提出了一种基于通用可编程IO口(GPIO)的摄像头总线接口(CAMIF)设计方案,通过普通的GPIO口来实现对Camera的数据采集,然后通过软件对采集来的数据进行处理,整个过程全部依赖于软件,从而摆脱了对硬件CAMIF的依赖,并由此实现廉价的拍照方案。     

Using Markov Learning Utilization Model for Resource Allocation in Cloud of Thing Network

Wireless Personal Communications - The integration of the Internet of Things (IoT) and cloud environment has led to the creation of Cloud of Things, which has given rise to new challenges in IoT...     

改进蚁群算法的路径规划研究

针对蚁群算法在复杂环境下收敛速度慢且存在停滞问题,提出一种改进的蚁群算法。为了避免蚁群陷入死锁状态,采用回退策略,避免蚂蚁盲目搜索产生大量交叉路径并有效减少蚂蚁死亡数量,并且借鉴了狼群分配策略来更新信息素,提高算法全局性,在状态转移概率中引入一个启发因子并进行调整,避免算法陷入停滞。仿真实验结果表明,改进后的蚁群算法收敛速度明显加快,寻优最短路径达到29.73,迭代次数较少28。验证了该算法的有效性和可行性。     

网络时延对数据中心布局的影响研究

随着5G、移动互联网、大数据、人工智能等信息技术与经济社会各领域的深度融合,不同业务数据对传输时延提出了不同要求,低时延业务需求迅速增长,网络时延已成为用户选取数据中心的重要指标。在端到端分析数据包传输的基础上,重点研究了影响网络时延的主要因素及相应的优化措施,并提出数据中心选址的建议。     

Facet Control for Trap‐State Suppression in Colloidal Quantum Dot Solids

Trap states in colloidal quantum dot (QD) solids significantly affect the performance of QD solar cells, because they limit the open‐circuit voltage and short circuit current. The {100} facets of PbS QDs are important origins of trap states due to their weak or missing passivation. However, previous investigations focused on synthesis, ligand exchange, or passivation approaches and ignored the control of {100} facets for a given dot size. Herein, trap states are suppressed from the source via facet control of PbS QDs. The {100} facets of ≈3 nm PbS QDs are minimized by tuning the balance between the growth kinetics and thermodynamics in the synthesis. The PbS QDs synthesized at a relatively low temperature with a high oversaturation follow a kinetics‐dominated growth, producing nearly octahedral nanoparticles terminated mostly by {111} facets. In contrast, the PbS QDs synthesized at a relatively high temperature follow a thermodynamics‐dominated growth. Thus, a spherical shape is preferred, producing truncated octahedral nanoparticles with more {100} facets. Compared to PbS QDs from thermodynamics‐dominated growth, the PbS QDs with less {100} facets show fewer trap states in the QD solids, leading to a better photovoltaic device performance with a power conversion efficiency of 11.5%.     

Janus‐Structured Co‐Ti3C2 MXene Quantum Dots as a Schottky Catalyst for High‐Performance Photoelectrochemical Water Oxidation

MXene materials have attracted increasing attention in electrochemical energy‐storage applications while MXene also becomes photo‐active at the quantum dot scale, making it an alternative for solar‐energy‐conversion devices. A Janus‐structured cobalt‐nanoparticle‐coupled Ti₃C₂ MXene quantum dot (Co‐MQD) Schottky catalyst with tunable cobalt‐loading content serving as a photoelectrochemical water oxidation photoanode is demonstrated. The introduction of cobalt triggers concomitant surface‐plasmon effects and acts as a water oxidation center, enabling visible‐light harvesting capability and improving surface reaction kinetics. Most importantly, due to the rectifying effects of Co‐MQD Schottky junctions, photogenerated carrier separation/injection efficiency can be fundamentally facilitated. Specifically, Co‐MQD‐48 exhibits both superior photoelectrocatalysis (2.99 mA cm^?2 at 1.23 V vs RHE) and charge migration performance (87.56%), which corresponds to 194% and 236% improvement compared with MQD. Furthermore, excellent photostability can be achieved with less than 6.6% loss for 10 h cycling reaction. This fills in gaps in MXene material research in photoelectrocatalysis and allows for the extension of MXene into optical‐related fields.     

A Multifunctional Blue‐Emitting Material Designed via Tuning Distribution of Hybridized Excited‐State for High‐Performance Blue and Host‐Sensitized OLEDs

Actualizing full singlet exciton yield via a reverse intersystem crossing from the high‐lying triplet state to singlet state, namely, “hot exciton” mechanism, holds great potential for high‐performance fluorescent organic light‐emitting diodes (OLEDs). However, incorporating comprehensive insights into the mechanism and effective molecular design strategies still remains challenging. Herein, three blue emitters (CNNPI, 2TriPE‐CNNPI, and 2CzPh‐CNNPI) with a distinct local excited (LE) state and charge‐transfer (CT) state distributions in excited states are designed and synthesized. They show prominent hybridized local and charge‐transfer (HLCT) states and aggregation‐induced emission enhancement properties. The “hot exciton” mechanism based on these emitters reveals that a balanced LE/CT distribution can simultaneously boost photoluminescence efficiency and exciton utilization. In particular, a nearly 100% exciton utilization is achieved in the electroluminescence (EL) process of 2CzPh‐CNNPI. Moreover, employing 2CzPh‐CNNPI as the emitter, emissive dopant, and sensitizing host, respectively, the EL performances of the corresponding nondoped pure‐blue, doped deep‐blue, and HLCT‐sensitized fluorescent OLEDs are among the most efficient OLEDs with a “hot exciton” mechanism to date. These results could shed light on the design principles for “hot exciton” materials and inspire the development of next‐generation high‐performance OLEDs.