Highly reliable a‐IGZO TFTs on a plastic substrate for flexible AMOLED displays

We have successfully reduced threshold voltage shifts of amorphous In–Ga–Zn–O thin‐film transistors (a‐IGZO TFTs) on transparent polyimide films against bias‐temperature stress below 100 mV, which is equivalent to those on glass substrates. This high reliability was achieved by dense IGZO thin films and annealing temperature below 300 °C. We have reduced bulk defects of IGZO thin films and interface defects between gate insulator and IGZO thin film by optimizing deposition conditions of IGZO thin films and annealing conditions. Furthermore, a 3.0‐in. flexible active‐matrix organic light‐emitting diode was demonstrated with the highly reliable a‐IGZO TFT backplane on polyimide film. The polyimide film coating process is compatible with mass‐production lines. We believe that flexible organic light‐emitting diode displays can be mass produced using a‐IGZO TFT backplane on polyimide films.     

Growth of Al2O3 whiskers by vapour-phase reactions

Needle-like or wool-like Al₂O₃ whiskers can be grown on a substrate by the hydrolysis of aluminium fluoride vapour. Effects of the growth conditions on the morphology of the crystals and growth processes of the whisker were investigated, and the optimum growth condition of whiskers was examined. Adequate vapour pressure conditions of the reactant gases for the growth of the wool-like whisker were found to be . Aluminium oxyfluoride was assumed to be the most probable intermediate species for the growth of Al₂O₃ whiskers. A variety of crystal morphologies are also shown and described with respect to the experimental conditions.     

Effect of Composition on the Oxygen Tracer Diffusion in Transparent Yttrium Aluminium Garnet (YAG) Ceramics

The grain boundary structure and oxygen tracer diffusion in transparent yttrium aluminum garnet (YAG) ceramics varying from 2% excess of Y₂O₃ to 0.5% excess of Al₂O₃ were studied. The characterization of the specimens is as follows: (i) For the Y₂O₃-excess specimen, a second phase (yttrium aluminum perovskite: YAP) containing silicon in the grain boundary was found, (ii) For the Al₂O₃-excess specimen, both aluminum-rich particles (alumina) and a silicon-rich segregant layer were observed in the grain boundary. The volume diffusion of the oxygen tracer is little influenced by the excess composition. In contrast, the grain boundary diffusion of the oxygen tracer is suppressed in the Y₂O₃-excess specimens, compared to Al₂O₃-excess specimens. These differences are thought to result from the chemical reaction between the second phase and the intergranular liquid phase during the sintering.     

Formation and Crystallization of Yttrium Aluminosilicate Glasses Containing Calcium Oxide

Formation of yttrium aluminosilicate glasses containing calcium oxide from batches melted at 1550°C was investigated. Densities and thermal expansion coeflcients were measured for some glasses. In a specific compositional region, crystals with a needlelike habit were observed in the glass matrix. A crystal in the form of a tubular hexagonal prism was identified as Ca₄Y₆0(Si0₄)₆.     

Charged ultrafiltration membrane for permeation of proteins

Polyacrylonitrile-g-poly(N,N-dimethylaminoethyl methacrylate) was synthesized photochemically and quaternized. The positively charged membranes made from the quaternized graftcopolymer showed high ultrafiltration rate for water by adding poly(vinyl alcohol) to casting solution and washing it out after the casting. In buffered saline solution, the permeability of the membranes was very small at pH below isoelectric point of albumin but increased markedly at higher pH. On the other hand, the permeability for γ-globulin was very small and did not show any pH dependence.     

Synthesis and electrode performance of layered nickel dioxide containing alkaline ions

Several polymorphs of layered nickel dioxide were prepared by using the chemical insertion of alkaline ions into Li_0.10NiO₂. We used aqueous AOH (A = Li, Na, K) solutions as reducing agents. Sodium and potassium insertion resulted in hydrated layered compounds that can be classified as γ-NiOOH with high crystallinity, while lithium insertion occurred without hydration. We discuss the coordination environment around the A⁺ ions for these inserted compounds. The thermal behavior, analyzed using high temperature (HT) X-ray diffraction (XRD) and thermogravimetric (TG) measurements, indicated that heating the hydrate at 150 °C yielded its dehydrate. The electrode performance of the nickelate was studied in lithium cells. We discuss the effect of interlayer water on cell rechargeability and the similarity between these nickelate and hydrated manganese dioxide (birnessite).     

Phosphonitrilic chloride: 37. Reaction of 1,1-diamino-3,3,5,5-tetrakis (2,2,2-trifluoroethoxy) cyclotriphosphazene with organosilanes

The Spiro compound N₃P₃(OCH₂CF₃)₄(NH)₂Si(CH₃)₂ formed by reaction of 1,1-diamino-3,3,5,5-tetrakis(2,2,2-trifluoroethoxy)cyclotriphosphazene N₃P₃(OCH₂CF₃)₄(NH₂)₂ and dimethyldichlorosilane Cl₂Si(CH₃)₂ is a yellow or orange coloured oil soluble in organic solvents, vapourized at 160°C without decomposition, and not hydrolysed appreciably in boiling water. Linear compounds are formed by reaction of N₃P₃(OCH₂CF₃)₄(NH₂)₂ with diphenyldichlorosilane or phenyltrichlorosilane owing to hindrance of the phenyl radical. These compounds are amorphous or tacky solids, soluble in organic solvents and stable to water.     

Synthesis of High Density and Transparent Forsterite Ceramics Using Nano-Sized Precursors and Their Dielectric Properties

Forsterite (Mg₂SiO₄) ceramics were prepared using Mg(OH)₂ and SiO₂ as precursors, and the effect of powder characteristics of Mg(OH)₂ on calcination and sintering was investigated. The use of highly dispersed Mg(OH)₂ powder (HD powder) resulted in a lower calcination temperature. Forsterite powder of high homogeneity and small particle size prepared from the HD powder enabled synthesis of high-density forsterite ceramics by ordinary sintering without applying external pressure. Moreover, transparent forsterite ceramics were successfully synthesized through addition of excess Mg to the precursors to compensate for Mg evaporated during the sintering process. Subsequent dielectric measurements revealed that the transparent forsterite ceramics had a very low dielectric loss (tan δ<10⁻⁴).     

β-phase transformation and thermoelectric power in FeSi2 and Fe2Si5 based alloys containing small amounts of Cu

The effects of Cu addition on the β phase formation rate and the thermoelectric power in various FeSi₂ and Fe₂Si₅ based alloys was examined. The peritectoid reaction (a+→β) in FeSi₂ alloys was initially enhanced by the addition of Cu but it became slower for longer annealing times. The retained metallic ε was harmful for the thermoelectric power. The inherent thermoelectric properties of (FeSi₂)_99−XMn₁Cu_X (X=0–1.O at.%), (FeSi₂)_99−X Co₁Cu_X (X=0–1.0 at.%) alloys were attained after the elimination of ε. In the case of eutectoid reaction (→β+Si). Differential thermal analysis, X-ray diffraction and microscopic observation clearly confirmed that the eutectoid reaction rate was drastically enhanced by the addition of a small amount of Cu and its rate decreased with decreasing Cu content. The rate also depends on the annealing temperature and reached a maximum at about 1073 K for most alloys. The addition of only 0.1 at.% Cu was still very effective even in Mn or Co doped alloys. The thermoelectric power of these alloys increased very quickly with annealing time. Their final values decreased with Cu content and saturated at 0.2 at.% Cu. The value of the 0.1 at.% Cu added alloy was higher than that of both the conventional p- and a-type FeSi₂ based alloys. These results suggest that the Fe₂Si₅ alloys with a small amount of Cu may be attractive as new thermoelectric materials.     

Anode‐voltage‐control circuit for compensation of luminance deterioration

Abstract— An external driving circuit that has realized long lifetime, power‐consumption control, and peak luminance for organic light‐emitting diode (OLED) displays have been developed. This circuit realizes an effective method for constant‐anode‐voltage (CV) driving refered to as clamped inverter (CI) driving. The feature of CV driving is to achieve low‐power consumption compared with constant‐anode‐current (CC) driving and to control the power consumption and peak luminance according to the image because display luminance can be easily changed by controlling the anode voltage. On the other hand, CV driving has the problem that luminance deterioration appears to be serious compared with that of CC driving because the current of the OLED element decreases according to usage time. To cope with this, a lifetime compensation circuit that has increased the anode voltage so that it compensates for the luminance deterioration has been developed. This circuit can compensate not only the decrease in current but also the decrease in luminance at a constant current that CC driving cannot. However, increasing the anode voltage causes an increase in stress on the OLED element. The influence of stress on OLED lifetime was verified. As a result, it was confirmed that this circuit can extend the lifetime by 32% even if the anode voltage is increased, causing stress on the OLED structure.