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91.
Hajime Tomita 《Electrical Engineering in Japan》2015,190(3):1-8
In this investigation, the nature of the electrostatic discharge (ESD) that occurs when a charged object moves toward a stationary grounded object is experimentally clarified. The spark lengths, discharge currents, and induced voltages in a magnetic probe were measured when a charged metallic spherical electrode connected to a 422 pF capacitor approached a stationary grounded object, which was the current target, for different moving speeds of the charged metallic spherical electrode in a range of 1 mm/s to 100 mm/s. The charge voltages of the capacitor were +6.5 kV and +10 kV. Based on the results, the average gap length shortened with the speed of the spherical electrode. The average peak values of the discharge current and the induced voltage were likely to increase with the speed of the spherical electrode. The average rise times of the discharge current and the induced voltage were likely to drop with the speed of the spherical electrode. The relation between the spark length and the discharge current due to the ESD can be explained qualitatively by using an equation derived from the spark resistance formula proposed by Rompe and Weizel. 相似文献
92.
Runwei Cheng Tatsumi TosawaMitsuo Gent Hajime Kato Yoshimasa Takayama 《Computers & Industrial Engineering》1996,31(3-4):867-871
This paper reports our experiment on training a three layer forwards neural network with backpropagation algorithm (BP) to memorise acoustic emission (AE) behaviors of magnesium alloy during fatigue test process and perform the mapping from AE behaviors to fatigue crack propagation. This study reveals the potential possibility of using artificial neural networks for automated AE testing. Simulation results are very encouraging and conclusively in favor of this attempt. 相似文献
93.
Photocapacitance (PHCAP) measurements have been carried out on GaP crystals grown by the liquid-encapsulated Czochralski (LEC)
method with heat treatment under various phosphorus-vapor pressures at different temperatures. Electron traps of EC−1.1 eV, EC−1.6 eV, EC−1.9 eV, and a hole trap of EV+2.26 eV are mainly detected. The phosphorus-vapor pressure dependence of the EC−1.9 eV trap density and their diffusion behavior indicate that they are interstitial phosphorus atoms. The densities of both
EC−1.1 eV and EC−1.6 eV traps are strongly dependent on the shallow impurity concentrations. Moreover, the density of EC−1.1 eV traps increases with increasing phosphorus-vapor pressure. From these results, we suggest that EC−1.1 eV traps are the complexes of shallow donors and antisite phosphorus atoms. Deep-level densities in GaP crystals after
annealing at 860°C or 960°C for 60 min are decreased almost one order of magnitude lower than those in untreated substrate
crystals, which should have occurred via out-diffusion of interstitial phosphorus atoms. However, such an effect is not prominent
for 800°C treatment for 60 min. 相似文献
94.
95.
96.
Wataru Tamura Arata Yasuda Ken Suto Masasuke Hosokawa Osamu Itoh Jun-Ichi Nishizawa 《Journal of Electronic Materials》2003,32(10):1079-1084
Effects of Bi doping in PbTe liquid-phase epitaxial layers grown by the temperature difference method under controlled vapor
pressure (TDM-CVP) are investigated. For Bi concentrations in the solution, xBi, lower than 0.2 at.%, an excess deep-donor level (activation energy Ed≈0.03–0.04 eV) appears, and Hall mobility is low. In contrast, for xBi>0.2 at.%, Hall mobility becomes very high, while carrier concentration is in the range of 1017 cm−3. Inductive coupled plasma (ICP) emission analysis shows that, for xBi=1 at.%, Bi concentration in the epitaxial layer is as high as NBi=2.3–2.7 × 1019 cm−3. These results indicate that Bi behaves not only as a donor but also as an acceptor, and the nearest neighbor or very near
donor-acceptor (D-A) pairs are formed, so that strong self-compensation of Bi takes place. Carrier concentration for highly
Bi-doped layers shows a minimum at a Te vapor pressure of 2.2 × 10−5 torr for growth temperature 470°C, which is coincident with that of the undoped PbTe. 相似文献
97.
The maximum liquid phase penetration and evaporation behavior was investigated by using simultaneous measurement for mie-scattered light images and shadowgraph ones. The objective of this study was to analyze effect of variant parameters and fuel properties on evaporation behavior, and to investigate liquid phase penetration for the single- and multi-component fuels. The experiments were conducted in a constant-volume vessel with optical access. Fuel was injected into the vessel with electronically controlled common rail injector. It was observed that: liquid phase length is influenced by fuel properties. High-boiling point fuel within the multi-component fuel controls liquid phase length. 相似文献
98.
Experiment and numerical simulation of double-layered RC plates under impact loadings 总被引:1,自引:0,他引:1
Tetsuo Shirai Atsushi Kambayashi Tomonori Ohno Hajime Taniguchi Masatoshi Ueda Nobutaka Ishikawa 《Nuclear Engineering and Design》1997,176(3)
This paper is to investigate and to propose a method to improve the impact resistance of reinforced concrete (RC) plates against projectile impact, and the damage of double-layered RC plates is examined experimentally and simulated analytically. In tests, a projectile launching apparatus, which is a 40 mm smooth-bore airgun, was used. Based on experimental results, numerical simulations with the DYNA-3D code, which takes account of the dynamic constitutive law of concrete, were done to find the applicability of the present computer code to the analysis of double-layered RC plates under high-speed impact loadings. In this study, the impact resistance of concrete plate is defined as the degree of local damage. In both experiments and numerical simulations, the effect of double-layering on the impact resistance is discussed. 相似文献
99.
Jun-ichi Nishizawa Akihiko Murai Hiroki Makabe Osamu Ito Tomoyuki Kimura Ken Suto Yutaka Oyama 《Solid-state electronics》2004,48(12):2251-2254
The tunnel injection transit time (TUNNETT) diodes with p+p+n+n−n+ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p+n+) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth. 相似文献
100.