Nanoweb Formation: 2D Self‐Assembly of Semiconductor Gallium Oxide Nanowires/Nanotubes

This paper reports a method to produce networks of crystalline gallium oxide comprised of one‐dimensional (1D) nanostructures. Because of the unique arrangement of wires, these crystalline networks are termed as ‘nanowebs’. Nanowebs are of great technological interest since they contain wire densities of the order of 10⁹ cm^–2. A possible mechanism for the fast self‐assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation–reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enabled them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β‐gallium oxide. Individual wire properties contribute to a nanoweb’s overall capacity and the implications for devices based on nanowebs are expected to be enormous.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Grain size effects on the mechanical properties of some squeeze cast light alloys

Mechanical property-grain size relationships have been examined for squeeze cast Al-4.5% Cu alloy, for an aluminium alloy with a composition corresponding to wrought 7010, and for a magnesium alloy AZ91. The general trend of the results obtained showed that the tensile properties and the fatigue strength improved as grain size decreased and the reverse was found to be the case for the fatigue crack propagation resistance and fracture energy of these castings. However, the results also showed that no simple common relationship existed between grain size and the tensile properties of the different alloys. The results are discussed in respect of their microstructures.     

Primer-induced labeling of pea and field bean chromosomes in situ and in suspension

A protocol for primed in situ DNA labeling (PRINS) was optimized for pea (Pisum sativum L.) and field bean (Vicia faba L.) chromosomes attached to coverslips. Cloned DNA or synthetic oligonucleotides were used as probes for repetitive DNA sequences (rDNA, Fok-element) and different reaction conditions were tested to achieve the highest specific signal-to-background ratio. A procedure based on direct labeling by fluorescein-dUTP was compared with an indirect one using digoxigenin detected by fluorescently labeled antibody. Under optimal conditions, strong and specific signals were obtained exclusively on chromosome regions known to contain respective DNA sequences. Compared to the direct labeling, significantly stronger signals were obtained when the indirect procedure was used. Both types of labeling were successfully applied to chromosomes in suspension and were shown to produce signals comparable to that obtained with chromosomes attached to coverslips. It is expected that primed in situ DNA labeling en suspension (PRINSES) will provide a basis for flow-cytometric discrimination and sorting of otherwise indistinguishable chromosomes according to their specific fluorescent labeling.     

Mesa and planar SiGe-HBTs on MBE-wafers

SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with f_max and f_T up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.     

2 cm long monolithic multisection laser for active modelocking at 2.2 GHz

A 2 cm long three-contact multisection laser has been fabricated for modelocking at very low repetition rates. Active modelocking yields 8.0-12.3 ps pulses at 2.2, 4.3 and 6.5 GHz corresponding to the fundamental, first, and second harmonics of the cavity resonance frequency. This device demonstrates the feasibility of fabricating monolithic pulse sources operating at rates as low as the OC-48 Sonet transmission rate (2.488 Gbit/s).<>     

Adaptation of drafting plotter for buried contact groove formation

Lasers (e.g. Nd-YAG) have been used extensively for groove formation both in laboratories and commercial production but the initial capital cost is high. The production throughput is also low and thus adds to the cost of the cell. To reduce cost and increase production throughput a drafting plotter has been adapted to serve as a mechanical scriber for groove formation. The adapted plotter can scribe cells in matrix form to reduce the human labour and increase the production throughput. The characterization of the scribing tips in conjunction with the plotter showed that the best yield for the scriber is obtained when the scribing tip is mounted at 78° to the stock. Of the seven characterized scribing tips, the 90° conical scriber has been found to give the same groove geometry as the laser. The application of the adapted plotter to cell fabrication did not show any significant deterioration in the electrical output parameters for the mechanically scribed cells when compared with laser scribed cells. This article reports the adaptation of the x-y table drafting plotter to form buried contact grooves.     

Crystallographic shear planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Atomic structures of crystallographic shear planes (CSPs) in nanocrystalline thin films of semiconductor SnO₂ were investigated by high-resolution electron microscopy. The films were prepared by electron beam evaporation in high vacuum (10^–6 torr) and followed by annealing in synthetic air at 700 °C for 1–2 H. CSPs with the displacement vector of [1/2 0 1/2] were observed in the planes parallel to (¯101), (110) and (¯3¯21). Most of the CPSs were found to terminate or interact with each other within SnO₂ crystallites. Partial dislocations exist at terminal places of CSPs or along intersecting lines of CSPs. CSP steps were also observed. Structural models of these defects have been proposed. Based on analysis of experimental data, it has been suggested that the Sn/O ratio at CSPs which are not parallel to their displacement vector, at cores of partial dislocations and at CSP steps, is higher than that of the perfect structure, that is, these defects are able to provide extra free electrons with the films.