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21.
We report on measurements of the in-plane resistivityρ and Hall coefficientR H (B∥c) of various oxygen-deficient epitaxial films of YBa2Cu3O7?x in the normal state. The superconducting transition temperaturesT c of the samples vary from 14 to 90 K. Both the resistivity and the Hall coefficient exhibit a strong dependence on the oxygen content and the temperature. Asx increases,T c decreases continuously, whileρ andR H gradually increase in magnitude. Furthermore, also the characteristic linear dependences ofραT andR Hα T ?1 of the highly doped compounds changes to a nonlinear behavior for the samples withT c lower than 60 K. The unusual doping and temperature dependence ofR H will be compared to the predictions of our calculations, based on a two-dimensional tight-binding model using the relaxation-time approximation. The model considers also the next-nearest-neighbor hopping, which strongly influences the predicted Hall coefficient. Additionally, the cotangent of the Hall angle cot(Θ H ) is discussed in the framework of the two-dimensional Luttinger liquid theory.  相似文献   
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In this letter, we will evaluate the performance degradation of a 40 km high‐speed (40 Gb/s) optical system, induced by optical fiber variations of the chromatic dispersion induced by temperature changes. The chromatic dispersion temperature sensitivity will be estimated based on the signal quality parameters.  相似文献   
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In this article, we present a review of observations during Al-3.5 wt pct Ni alloy solidi.cation experiments performed at the European Synchrotron Radiation Facility (ESRF) in Grenoble. These experiments provide direct access to dynamical phenomena during columnar growth (initial transient and breakdown of a planar solid-liquid interface), and for the first time to the transition from columnar-to-equiaxed microstructure (nucleation ahead of a columnar front and blocking of a columnar front by an equiaxed microstructure) and fully equiaxed growth (propagation of an effective front). Based on these experimental observations, critical parameters such as columnar growth velocity variation during the transition or equiaxed-grain diameter are measured and discussed. This article is based on a presentation made in the symposium entitled “Solidi.cation Modeling and Microstructure Formation: In Honor of Prof. John Hunt,” which occurred March 13–15, 2006, during the TMS Spring Meeting in San Antonio, Texas, under the auspices of the TMS Materials Processing and Manufacturing Division, Solidification Committee.  相似文献   
26.
We describe a novel microfluidic perfusion system for high-resolution microscopes. Its modular design allows pre-coating of the coverslip surface with reagents, biomolecules, or cells. A poly(dimethylsiloxane) (PDMS) layer is cast in a special molding station, using masters made by photolithography and dry etching of silicon or by photoresist patterning on glass or silicon. This channel system can be reused while the coverslip is exchanged between experiments. As normal fluidic connectors are used, the link to external, computer-programmable syringe pumps is standardized and various fluidic channel networks can be used in the same setup. The system can house hydrogel microvalves and microelectrodes close to the imaging area to control the influx of reaction partners. We present a range of applications, including single-molecule analysis by fluorescence correlation spectroscopy (FCS), manipulation of single molecules for nanostructuring by hydrodynamic flow fields or the action of motor proteins, generation of concentration gradients, trapping and stretching of live cells using optical fibers precisely mounted in the PDMS layer, and the integration of microelectrodes for actuation and sensing.  相似文献   
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The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.  相似文献   
29.
In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO2 gate oxides using microscopic models of Si[100]-SiO2-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.  相似文献   
30.
Modelling spatio-temporal environmental data   总被引:1,自引:0,他引:1  
A conceptual model for environmental data is presented with special emphasis on the ability to store spatio-temporal references of the data. Other aspects of the model are the ability to handle hierarchical data and semantics of the measurements. The model was tested with an implementation on an object-relational database management system. As a part of the test implementation, a forestry data set covering 75 years and 4900 hectares was loaded onto the database.  相似文献   
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