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Aluminium Alkyls with Heteroatoms. II. Preparation of Tris[(3-trimethylsilyl)-propyl]aluminium Tris[(3-trimethylsilyl)-propyl]aluminium is prepared by disproportionation and by an olefine displacement reaction in a circulation process. The reaction way is investigated with the aid of 1H-n.m.r.- and i.r.-spectroscopy.  相似文献   
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While it has been argued that field‐dependent geminate pair recombination (GR) is important, this process is often disregarded when analyzing the recombination kinetics in bulk heterojunction organic solar cells (OSCs). To differentiate between the contributions of GR and nongeminate recombination (NGR) the authors study bilayer OSCs using either a PCDTBT‐type polymer layer with a thickness from 14 to 66 nm or a 60 nm thick p‐DTS(FBTTh2)2 layer as donor material and C60 as acceptor. The authors measure JV‐characteristics as a function of intensity and charge‐extraction‐by‐linearly‐increasing‐voltage‐type hole mobilities. The experiments have been complemented by Monte Carlo simulations. The authors find that fill factor (FF) decreases with increasing donor layer thickness (Lp) even at the lowest light intensities where geminate recombination dominates. The authors interpret this in terms of thickness dependent back diffusion of holes toward their siblings at the donor–acceptor interface that are already beyond the Langevin capture sphere rather than to charge accumulation at the donor–acceptor interface. This effect is absent in the p‐DTS(FBTTh2)2 diode in which the hole mobility is by two orders of magnitude higher. At higher light intensities, NGR occurs as evidenced by the evolution of s‐shape of the JV‐curves and the concomitant additional decrease of the FF with increasing layer thickness.  相似文献   
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There is increasing interest in deploying ATM technology in local or campus networks. ATM is an ideal technology to overcome many of the limitations of today's LAN technologies. This article focuses on the application of ATM in the LAN environment to interconnect high-end host computers, and on the interworking of ATM-based LANs with legacy LANs. The authors introduce ATM LAN requirements, followed by a discussion of possible ATM LAN architectures to support these requirements. The article then covers current standards and their relation to the possible architectures, and concludes with a discussion of current ATM LAN issues and directions  相似文献   
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A self-aligned complementary GaAs (CGaAs) technology (developed at Motorola) for low-power, portable, digital and mixed-mode circuits is being extended to address high-speed VLSI circuit applications. The process supports full complementary, unipolar (pseudo-DCFL), source-coupled, and dynamic (domino) logic families. Though this technology is not yet mature, it is years ahead of CMOS in terms of fast gate delays at low power supply voltages. Complementary circuits operating at 0.9 V have demonstrated power-delay products of 0.01 μW/MHz/gate. Propagation delays of unipolar circuits are as low as 25 ps. Logic families can be mixed on a chip to trade power for delay. CGaAs is being evaluated for VLSI applications through the design of a PowerPC-architecture microprocessor  相似文献   
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The author reviews the history of medical image computing at his institute, summarizes the achievements, sketches some of the difficulties encountered, and draws conclusions that might be of interest especially to people new to the field. The origin and history section provides a chronology of this work, emphasizing the milestones reached during the past three decades. In accordance with the author's group's focus on imaging, the paper is accompanied by many pictures, some of which, he thinks, are of historical value.  相似文献   
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