Encoding of information into neural spike trains in an auditory nerve fiber model with electric stimuli in the presence of a pseudospontaneous activity

This paper presents an information-theoretic analysis of neural spike trains in an auditory nerve fiber (ANF) model stimulated extracellularly with Gaussian or sinusoidal waveforms in the presence of a pseudospontaneous activity of spike firings. In the computer simulation, stimulus current waveforms were applied repeatedly to a stimulating electrode located 1 mm above the 26th node of Ranvier, in an ANF axon model having 50 nodes of Ranvier, each consisting of stochastic sodium and potassium channels. From spike firing times recorded at the 36th node of Ranvier, a post-stimulus time histogram (PSTH) was generated, and raster plots were depicted for 30 stimulus presentations, in order to investigate the temporal precision and reliability of the spike firing times. Also, inter spike intervals were generated and then "total" and "noise" entropies were estimated to obtain the mutual information and the information rate of the spike trains. It was shown in the case of Gaussian electric stimuli that the temporal precision of spike firing times and the reliability of spike firings were found to increase as the standard deviation (SD) of the Gaussian electric stimuli increased. It was also shown in the case of sinusoidal electric stimuli where there was a specific amplitude of sinusoidal waveforms, the information rate being maximized. It was implied that setting the parameters of electric stimuli to the specific values which maximize the information rate might contribute to efficiently encoding information into the spike trains in the presence of a pseudospontaneous activity of spike firings.     

Dual-band circularly polarized equilateral triangular-patch array antenna for mobile satellite communications

The Japan Aerospace Exploration Agency will launch the Engineering Test Satellite VIII (ETS-VIII) in 2006 to support the next generation of mobile satellite communications covering the area of Japan (beam coverage El=38/spl deg/ to 58/spl deg/). In this paper, a satellite-tracking left-handed circularly polarized triangular-patch array antenna is developed for ground applications. The targeted minimum gain of the antenna is set to 5 dBic at the central elevation angle (El=48/spl deg/), in the Tokyo area, for applications using data transfer of around a hundred kbps. The antenna is composed of three equilateral triangular patches for both reception and transmission units operating at 2.50 and 2.65 GHz frequency bands, respectively. The antenna was simulated by method of moments (MoM) analysis, and measurement of the fabricated antenna was performed to confirm the simulation results. The measurement results show that the frequency characteristics and the 5-dBic gain coverage in the conical-cut plane of the fabricated antenna satisfy the specifications for ETS-VIII. A prototype of the proposed antenna system is employed in outdoor experiments using a pseudosatellite and shows good performance from El=38/spl deg/ to 58/spl deg/.     

Removal of Interlayer Water of two Ti3C2Tx MXenes as a Versatile Tool for Controlling the Fermi-Level Pinning-Free Schottky Diodes with Nb:SrTiO3

Striving for the sixth-generation communication technology discovery, semiconductors beyond Si with wider bandgaps as well as non-conventional metals are actively being sought to achieve high speeds whilst maintaining devices miniaturization. 2D materials may provide the potential for downsizing, but their functional advantage over existing counterparts still longs to be discovered. Along that path, surface-adsorbed or bulk-intercalated water molecules remaining after wet-chemical synthesis of 2D materials are generally seen as obstacles to high-performance achievement. Herein, the control of such water within the interlayers of solution-processed metallic 2D titanium carbide (MXene) by vacuum annealing duration is demonstrated. Moreover, the impact of water removal on work function (WF) and functional terminations is unveiled for the first time. Furthermore, the usefulness of such water for controlling a novel Schottky diode in contact with an n-type oxide semiconductor, niobium-doped strontium titanate (Nb:SrTiO₃) is observed. The advantage of MXene compared to conventional gold as facile processing, WF tunability, and lower turn-on voltage in the Schottky anode application is highlighted. This fundamental study shows the way for a novel Schottky diode preparation in atmospheric conditions and provides implications for further research directions aiming at commercialization.     

Efficient electron transport in 4,4′-bis[N-(1-napthyl)-N-phenyl-amino] biphenyl and the applications in white organic light emitting devices

The electron transport capability of 4,4′-bis[N-(1-napthyl)-N-phenyl-amino] biphenyl (α-NPD) was investigated by fundamental physical measurements named as current–voltage (I–V) electrical property evaluation and displacement current measurement (DCM). In electron-dominated devices, the I–V characteristics of α-NPD were similar as that of (8-hydroxyquinolino) aluminum (Alq₃) owing to their same order of electron mobilities. The interface of Al/LiF and α-NPD was proven to be an Ohmic contact through the evaluation of I–V characteristics at low bias regime (<3 V). And an electron injection barrier, 0.21 eV, at Al/LiF/α-NPD was obtained by extrapolating the temperature dependent I–V curves. The electron transport behavior in α-NPD film was further confirmed by DCM evaluations. Furthermore, an efficient white organic light emission device was successfully fabricated by using α-NPD as hole transport layer and electron transport layer, respectively.     

All-optical discrimination based on nonlinear transmittance of MQWsemiconductor optical gates

This paper proposes an all-optical regenerator utilizing a novel all-optical discriminator. The impacts of nonlinearity of optical gates on discrimination performance are estimated. The evaluation of discrimination performance shows that amplified spontaneous emission noise and wave form distortion in optical signals can be effectively suppressed. We experimentally demonstrate the suppression using a low-temperature-grown optical switch up to 10 Gb/s     

Submicrometer Comb-Drive Actuators Fabricated on Thin Single Crystalline Silicon Layer

Electrostatic comb-drive microactuators were fabricated by electron beam lithography on a 260-nm-thick silicon layer of a silicon-on-insulator wafer. The actuators consisted of comb electrodes, springs, and a frame. Two kinds of microactuators with doubly clamped and double-folded springs were designed and fabricated. The comb electrode was as small as 2.5 mum wide and 8 mum long and was composed of 250-nm-wide, 260-nm-thick, and 2-mum-long fingers. The air gap between the fingers was 350 nm. The spring was 250 nm wide, 260 nm thick, and 17.5 mum long, and the spring constant was 0.11 N/m. The force and displacement generated by the microactuator were 2.3 x 10^-7N and 1.0 mum, respectively. Applying an ac voltage, the oscillation amplitude became maximum at a frequency of 132 kHz. The mechanical and electrical characteristics of the fabricated actuators were investigated quantitatively.     

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Electrical and physical characteristics of the Al₂O₃/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.     

Fabrication method for IC-oriented Si single-electron transistors

A new fabrication method for Si single-electron transistors (SETs) is proposed. The method applies thermal oxidation to a Si wire with a fine trench across it on a silicon-on-insulator substrate. During the oxidation, the Si wire with the fine trench is converted, in a self-organized manner, into a twin SET structure with two single-electron islands, one along each edge of the trench, due to position-dependent oxidation-rate modulation caused by stress accumulation. Test devices demonstrated, at 40 K, that the twin SET structure can operate as two individual SET's. Since the present method produces two SET's at the same time in a tiny area, it is suitable for integrating logic circuits based on pass-transistor type logic and CMOS-type logic, which promises to lead to the fabrication of single-electron logic LSIs     

Characterization of polymer-adhesive interfaces on a nanometre scale by elemental mapping and image EELS using EFTEM

Energy-filtering transmission electron microscopy (EFTEM) was applied for investigating interfaces between a polymer and an adhesive. The sample employed in this work is polybutylene terephtharate (PBT) sheets laminated with an epoxy adhesive. It was found that heat aging of the PBT at 180 degrees C in air for > 9 h prior to adhesion decreases the adhesion strength drastically. To investigate this unfavourable aging effect on the adhesion strength, we performed elemental mapping and image EELS using EFTEM. A weak boundary layer with a thickness of < 50 nm was visualized at the PBT-adhesive interface by elemental mapping in the sample subjected to the heat aging and image EELS revealed the origin of this layer. Thus, we clearly correlated the nanoscale interfacial structure with the adhesion strength by EFTEM.