Web-based systems design: a study of contemporary practices and an explanatory framework based on “method-in-action”

This paper reports the findings of a detailed study of Web-based systems design (WBSD) practices in Ireland based on data collected over a 3-year period (2002–2005), the objectives of which were to (1) contribute towards a richer understanding of the current “real-world” context of WBSD by characterising the profile of a typical project (team size, timeframe, nature of requirements, etc.) and identifying the key challenges, constraints, and imperatives (i.e. “mediating factors”) faced by Web-based system designers, and (2) understand how those contextual parameters and mediating factors influence the activity of WBSD as regards the selection and enactment of whatever design practices are therefore engaged (i.e. the use of methods, procedures, etc.). Data was gathered through a survey which yielded 165 usable responses, and later through a series of semi-structured qualitative interviews. Using grounded theory, an explanatory conceptual framework is derived, based on an extension of the “method-in-action” model, the application of which to WBSD has not been previously investigated in depth. It is proposed that this framework of WBSD issues is valuable in a number of ways to educators, researchers, practitioners, and method engineers.     

预应力钢-混凝土组合梁的应用与研究

回顾了预应力钢 混凝土组合梁国内外应用与研究历史 ,分析了现有规范及理论的不足 ,并指出了有待解决的问题。     

应用均匀设计法研究安息香缩合工艺

利用均匀设计法通过SPSS10.0计算机软件研究了反应条件对安息香缩合的影响。从而获得优化的工艺条件，与正交试验相比，该法试验次数少。工作效率高，并且便于分析各种因素的影响。     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

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本文通过对在用钻机井架的现场实际测试,建立数据库、测评模型,对实测的数据用计算机技术进行分析,提出了初始弯曲应力;数据正态分布检验——x～2检验;建立回归方程;在给定置信度下测评当前承载能力的技术概念。解决了在用钻机A型井架的安全性评估问题,是一种较为合理、可靠、科学的测评技术和方法。     

Effect of processing history on the properties of Ag-based tapes

The Bi-system tapes and coils were prepared by the powder-in-tube method. The effect of processing and heat treatment on the properties of the tapes and coils was studied. It is found that the shearing stress produced by the rolling process may destroy the 2223 phase, and the destroyed 2223 phase cannot be recovered by heat treatment, whereas the pressing stress produced by the uniaxial pressing process only makes the 2223 phase grains break, and the broken 2223 phase can be closed by the heat treatment. TheJ _c values of the rolling samples, pressing sample, and the coil with a diameter of 35 mm are over 1.3×10⁴, 2.5×10⁴, and 4×10³ A/cm² (77 K, 0 T), respectively.