Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

Low cycle fatigue and creep behavior of recrystallized Molybdenum near room termperature

The deformation behavior of pure recrystallized molybdenum under cyclic and static loads was investigated in the temperature range between 30°C and 10O°C, for stress amplitudes between 100 MPa and 250 MPa and for static loads up to 200 MPa. The results show that in spite of the low test temperatures and stress levels the Mo material exhibits considerable plastic strains which depend sensitively on frequenez and small changes in temperature.The activation energy deduced for the static and dynamic deformation is less than 0.98 eV which indicates thermally activated processes, to be explained by a dislocation kink model as described in the literature. The low-temperature fatigue behavior appears strongly influenced by creep-fatigue interaction phenomena.     

分割电极片状压电致动器——(二)位移特性及狭缝宽度对其影响的实验研究

研究了悬臂梁式分割电极片状压电致动器的位移特性。理论分析表明，分割电极狭缝宽度会减小致动器自由端的位移输出，但当狭缝宽度小于致动器电极宽度的１０％时，可忽略狭缝宽度的影响。致动器端部位移的测试结果大于理论计算值。与现有磁头悬浮臂尺寸相近的致动器，在２０Ｖ～５０Ｖ的电压驱动下均可获得１μｍ～２μｍ的致动位移。对９８５０道／厘米的密度磁盘，该位移能覆盖至少一个磁道宽度，满足磁头定位两级伺服系统对第二级致动器位移的基本要求。     

铁磁偶合的Gd（Ⅲ）Cu（Ⅱ）配合物──组装分子基铁磁体的一种重要元件

铁磁偶合的Ｇｄ（Ⅲ）Ｃｕ（Ⅱ）配合物──组装分子基铁磁体的一种重要元件缪明明，廖代正，王耕霖（南开大学化学系天津３０００７１）摘要分子基磁体的设计是自然界向化学家挑战的一个热点课题。铁磁偶合的Ｇｄ（Ⅲ）Ｃｕ（Ⅱ）配合物是组装分子基磁体的一种重要元件。...     

Two bit correlation-an adaptive time delay estimation

Time delay estimation is a very important operation in ultrasound time-domain flow mapping and correction of phase aberration of an array transducer. As the interest increases in the application of one and a half-dimensional (1.5-D) and two-dimensional (2-D) array transducers to improving image quality and three-dimensional (3-D) imaging, the need of simple, fast, and sufficiently accurate algorithms for real-time time delay estimation becomes exceedingly crucial. In this paper, we present an adaptive time-delay estimation algorithm which minimizes the problem of noise sensitivity associated with the one bit correlation while retaining simplicity in implementation. This algorithm converts each sample datum into a two bit representation including the sign of the sample and an adaptively selected threshold. A bit pattern correlation operation is applied to find the time delay between two engaged signals. By using the criterion of misregistration as an indicator, we are able to show that the proposed algorithm is better than one bit correlation in susceptibility to noise level. Analytical results show that the improvement in reducing misregistration of the two bit correlation over its counterpart is consistent over a wide range of noise level. This is achieved by an adaptive adjustment of the threshold to accommodate signal corruption due to noise. The analytical results are corroborated by results from simulating the blood as a random distribution of red blood cells. Finally, we also present a memory-based architecture to implement the two bit correlation algorithm whose computation time does not depend upon the time delay of the signals to be correlated     

激光法合成SiC超细粉末物理化学过程的研究——Ⅰ.实验规律及粉末特性

用50W连续波CO_2激光器为热源,诱发SiH_4和C_2H_4反应,合成SiC超细粉末。实验确定了反应腔体内压力p、气源中的C/Si原子比、喷嘴内径2r以及激光功率密度与粉末特性之间的关系,并对合成的产物进行物理、化学表征。     

Pore size control of porous silica by sol-gel process

Porous silica glass was prepared by sol-gel process from tetraethoxysilane (TEOS). The effects of solvents (water, ethanol), drying condition, heat treatment temperature on specific surface area and pore size distribution of porous silica were investigated. Gelation process accelerates with an increase of H₂O content, while retards with the increase of ethanol amount. Structure changes during heat treatment were studied by means of DTA, XRD. TEM micrographs show that the gel particles shrink after heated at 500°C, thus the average pore size decreases.     

Fast convergent study on potential－harmonic method of directly solving Schrodinger equation in few－body systems

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