极尖断面为折线的四极透镜磁性能研究

对传统双曲线极尖的四极透镜进行了磁性能分析。在此基础上，提出了极尖断面为折线的四极透镜结构。磁场的数值分析以及测量结果表明：该结构产生的场梯度均匀，且具有磁场集中、磁场梯度高、便于加工和安装的对称性控制等优点。该结构的四极透镜已用于ＣＹＣＩＡＥ－３０回旋加速器和ＨＩ－１３串列加速器束流输运线之中     

Effects of substrate temperature and texturing on the magnetic properties and crystallographic structures of CoCrTa/Cr thin film

Bi-layer CoCrTa/Cr films were deposited on textured aluminium or textured NiP-plated aluminium substrate by d.c. magnetron sputtering. The crystal anisotropy and thereby magnetic properties depending on substrate material, substrate temperature and texturing, were investigated. The magnetic crystal anisotropy induced by the mechanical texture on aluminium or NiP/Al substrates along the texture lines for the film deposited at high temperature, were clearly observed, while the film deposited at low temperature shows less prominent anisotropic behaviour. X-ray diffraction analysis indicates a change in the preferred orientation of the chromium and CoCrTa films sputtered on different substrates at different temperatures. It was found that a high substrate temperature was beneficial to the formation of Cr(002) and therefore epitaxial growth of Co(11¯20) on Cr(002) for either aluminium or NiP/Al substrates.     

Temperature Dependence of Ultra-Low-Frequency Dielectric Relaxation of Barium Titanate Ceramic

Based on a linear voltage ramp method, ultraslow dielectric relaxation of undoped BaTiO₃ ceramic has been carefully measured over the temperature range between − 180° and +120°C. Temperature dependence of the dielectric constant in the frequency range from 10 ⁻⁵ to 10⁻¹ Hz can be obtained using Kramers–Kronig equations. Close to the Curie temperature, the dielectric constant increases so rapidly that the Curie peak is overwhelmed. Two kinds of relaxation processes were observed in this experiment. Ferroelectric domain and mobile charge are proposed to be responsible for the relaxation over the temperature range. With temperature increasing, Maxwell–Wagner relaxation associated with mobile charge gradually dominates. From relaxation time constants at various temperatures, relaxation activation energies about 0.06 and 0.09 eV are identified.     

Magnetism in SiC implanted with high doses of Fe and Mn

High concentrations (0.1–5 at.%) of Mn or Fe were introduced into the near-surface region (≤2000 Å) of 6H-SiC substrates by direct implantation at ～300°C. After annealing at temperatures up to 1000°C, the structural properties were examined by transmission electron microscopy (TEM) and selected-area diffraction pattern (SADP) analysis. The magnetic properties were examined by SQUID magnetometry. While the Mn-implanted samples were paramagnetic over the entire dose range investigated, the Fe-implanted material displayed a ferromagnetic contribution present at <175 K for the highest dose conditions. No secondary phases were detected, at least not to the sensitivity of TEM or SADP.     

Extensive thrombophlebitis with reactive thrombocytosis in a high risk Chinese parturient associated with retained placenta increta: a case report

Forty-three patients with spastic quadriplegia (mean age 7.9 years, range 3.3 to 17.2 years) underwent bone mineral density (BMD) measurement of the lumbar spine and were evaluated between 2.6 and 5.5 years (mean 3.8) later to determine whether this measurement had predicted risk of fracture over the subsequent period of observation. Other potential risk factors that were evaluated include body weight z score, serum vitamin D levels, previous fracture, and hip spica casting. The baseline measurements showed that BMD falls further below normal with increasing age and was more than one standard deviation below age-matched normal mean in 38 of the 43 patients. Fracture rate did not differ between those with low and those with very low spinal BMD. Similarly, serum vitamin D levels and body weight z scores were not predictive of fracture. However, fracture rate was over fourfold greater following spica casting and more than threefold greater following an initial fracture. Fracture rates in the study group were similar to those reported for age- and sex-matched normal children, though generally the location of the fractures and mechanisms of injury differed.     

Hyperdynamic circulation of cirrhotic rats: role of substance P and its relationship to nitric oxide

BACKGROUND: It has been suggested that excessive formation of nitric oxide (NO) is responsible for the hyperdynamic circulation observed in portal hypertension. Substance P is a neuropeptide partly cleared by the liver and causes vasodilatation through the activation of the endothelial NO pathway. However, there are no previously published data concerning the plasma level of substance P in cirrhotic rats and its relationship to NO. METHODS: Plasma concentrations of substance P and nitrate/nitrite (an index of NO production) were determined in control rats and cirrhotic rats with or without ascites using an enzyme-linked immununosorbent assay and a colorimetric assay, respectively. In addition, systemic and portal hemodynamics were evaluated by a thermodilution technique and catheterization. RESULTS: Cirrhotic rats with and without ascites had a lower systemic vascular resistance (2.6 +/- 0.2 and 3.9 +/- 0.4 mmHg ml(-1) x min x 100 g body weight, respectively) and higher portal pressure (14.6 +/- 0.6 and 11.3 +/- 1.8 mmHg) than control rats (6.5 +/- 0.3 mmHg x ml(-1) x min x 100 g BW and 6.8 +/- 0.2 mmHg, respectively, P < 0.05), and cirrhotic rats with ascites had the lowest systemic vascular resistance. Plasma levels of nitrate/nitrite progressively increased in relation to the severity of liver dysfunction (control rats, 2.7 +/- 0.5 nmol/ml; cirrhotic rats without ascites, 5.6 +/- 1.3 nmol/ml; cirrhotic rats with ascites, 8.3 +/- 2.2 nmol/ml; P < 0.05). Cirrhotic rats with ascites displayed higher plasma values of substance P (57.7 +/- 5.9 pg/ml) than cirrhotic rats without ascites (37.9 +/- 3.1 pg/ml, P < 0.05) and control rats (30.1 +/- 1.0 pg/ml, P < 0.05). There was no significant difference in plasma substance P values between control rats and cirrhotic rats without ascites (P > 0.05). No correlation was found between plasma levels of substance P and nitrate/nitrite (r = 0.318, P > 0.05). CONCLUSIONS: Excessive formation of NO may be responsible, at least partly, for the hemodynamic derangements in cirrhosis. Although substance P may not participate in the initiation of a hyperdynamic circulation in cirrhosis, it may contribute to the maintenance of the hyperdynamic circulation observed in cirrhotic rats with ascites.     

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.     

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.