Shorted Microstrip Patch Antenna Using Inductively Coupled Feed for UHF RFID Tag

A very small patch‐type RFID tag antenna (UHF band) using ceramic material mountable on metallic surfaces is presented. The size of the proposed tag is 25 mm×25 mm×3 mm. The impedance of the antenna can be easily matched to the tag chip impedance by adjusting the size of the shorting plate of the patch and the size of the feeding loop. The measured maximum reading distance of the tag at 910 MHz was 5 m when it was mounted on a 400 mm × 400 mm metallic surface. The proposed design is verified by simulation and measurements which show good agreement.     

Writing current reduction and total set resistance analysis in PRAM

We evaluated the limit of scaling bottom electrode contact (BEC) heater size and high resistivity heater to reduce writing current. It was found that the resistivity of heater should be increased for reducing writing current below the heater size of about 50 nm without any undesirable increase of resistance of the crystalline state (SET state, Rset). It was shown in the numerical simulations that the dissipated heat loss through BEC during melting GST was decreased in the increase of resistivity of heater. In addition, we analyzed the resistance components contributing to the total set resistance. It was observed that the undesired sharp increase of Rset as the BEC size decreases below 50 nm was attributed to the resistance component of GST–BEC interface. In the case of high resistivity heater, the contributions of both incomplete crystallization and heater itself were enhanced.     

Complementary integrated circuits on plastic foil using inkjet printed n- and p-type organic semiconductors: Fabrication,characterization, and circuit analysis

Complementary thin-film transistor circuits composed of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS–PEN) and a rylene carboxylic diimide derivative for p- and n-channel thin-film transistors (TFTs) were fabricated on flexible foils. The so-called staggered TFT configuration is used, meaning that the semiconductors layers are deposited last. The work-function of the injecting gold electrodes were modified using several self-assembled monolayers (SAMs). For optimized contacts the mobility of the n- and p-channel TFTs was 0.5 cm²/Vs and 0.2 cm²/Vs, respectively. Strongly degraded performance is obtained when the n-channel material was printed on contacts optimized for the p-channel TFT, and vice versa. This illustrates that for CMOS circuits we need careful work-function engineering to allow proper injection for both electrons and holes. We show for the first time that by using a bimolecular mixture for the SAM we can systematically vary the work function, and demonstrate how this affects the performance of discrete n-type and p-type transistors, as well as CMOS inverters and ring oscillators. Under optimal processing conditions we realized complementary 19-stage ring oscillators with 10 μs stage delay operating at 20 V.     

Determination of the interface energy level alignment of a doped organic hetero-junction using capacitance–voltage measurements

A simple method based on capacitance–voltage (C–V) measurements is reported to determine the interface energy level alignment at the junction of 15 mol% Cs₂CO₃ doped 4,7-diphenyl-1,10-phenanthroline (BPhen) and 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN) fabricated under high vacuum. The junction properties, such as the depletion layer thickness, built-in potentials and vacuum level shift were calculated with simple Mott–Schottky and Poisson’s equations with the boundary condition of a continuous electric flux density using the information from the C–V data. The interface energy level alignment determined by this method is well matched with the one determined using the in situ ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS) experiments performed under ultra-high vacuum. This method can be applied to other semiconductor junctions such as the organic p–n homojunctions and heterojunctions with known energy levels, as long as the metal/semiconductor contact is Ohmic without referring to the photoemission spectroscopies. Moreover, the energy level alignment determined by the C–V measurement gives a more realistic result since the films for the measurements are formed under high vacuum which is a normal device fabrication environment rather than under ultra high vacuum.     

Octupolar Films with Large Second Harmonic Generation and Electro‐Optical Effects

Thin films that benefit from efficient octupolar molecular packing are prepared for second harmonic generation (SHG) and electro‐optic (EO) applications. The films are composed of 1,3,5‐tricyano‐2, 4,6‐tris(p‐diethylaminostyryl)benzene (TTB) in a ploymethylmetacrylate (PMMA) matrix on aluminum/BK7 glass (Al/BK7) and polyimide/indium tin oxide (PI/ITO) substrates. Octupolar films prepared on both substrates display polycrystalline and cylindrical domains. The molecular orientation, SHG efficiencies, and EO coefficients of the crystalline domains are measured. In the cylinders, the molecular crystal planes are oriented perpendicularly to the major cylinder axis, whereas in the polycrystals, the planes are randomly oriented. While both structures exhibit high and stable SHG and EO efficiencies, the cylinders, in particular, exhibited a very large SHG, a large EO coefficient, and high thermal stability; these characteristics will be useful in second order nonlinear optical applications.     

Performance analysis and simulation of OCDMA system based on FBGs encoder/decoder

The encoding/decoding scheme based on Fiber Bragg Grating （FBG） for Optical Code Division Multiple Access （OCDMA） system is analyzed and the whole process from transmitting end to receiving end is researched in detail. The mathematical mode including signal transmission, summing, receiving and recovering are established respectively. One of the main sources of Bit Error Rate （BER） of OCDMA system based on FBGs is the unevenness of signal power spectrum, which leads to the chip powers unequal with each other. The Signal to Interfere Ratio （SIR） and BER performance of the system are studied and simulated at the case with uneven distribution of chips＇ powers.     

Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes

We investigated the effect of two different quantum well (QW) structures having different indium contents on the optical performance of fully packaged GaN-based light-emitting diodes (LEDs). Dual-spectrum QW LEDs exhibit ～4% higher external quantum efficiency (at 350 mA) than single-spectrum QW LEDs. However, the two types of LEDs exhibit similar efficiency droop behavior. For both types of LEDs, the output power decreases with increasing junction temperature. When the junction temperature exceeds 70°C, the dual-spectrum QW LEDs exhibit lower output power than the single-spectrum QW LEDs. The wavelength dependence of the output power (at 350 mA) of single-spectrum QW LEDs shows that the LEDs with shorter wavelengths experience more rapid optical degradation than the LEDs with longer wavelengths. Based on the wavelength- and junction-temperature-dependent output power, the droop behavior of the dual-spectrum QW LEDs is described and discussed.     

An Iterative Receiver for Uplink of Coded MIMO DS-CDMA System Employing Layered Space-Time Transmission

We consider a coded multiple-input multiple-output (MIMO) DS-CDMA system using layered space-time transmission in multipath wireless channels, where space-time signals from multiple antennas of multiple users propagate through rich scattering multipath fading. We propose a receiver employing iterative joint detection and decoding with a reduced-complexity detector using linear minimum mean squared error filtering with a priori information and parallel soft-input soft-output (SISO) decoders. Computer simulation results show that the proposed receiver for multi-user MIMO transmission provides high-spectral efficiency and performance approaching to single-user bound. Furthermore, the reduced-complexity receiver outperforms an iterative soft decision-directed maximal ratio combining (DD-MRC) receiver, RAKE receiver as well as a conventional non-iterative receiver.     

High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

We fabricated high-performance thin-film transistors (TFTs) with an amorphous-Al–Sn–Zn–In–O (a-AT-ZIO) channel deposited by cosputtering using a dual Al–Zn–O and In–Sn–O target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 $ hbox{cm}^{2}/hbox{V}cdothbox{s}$, an excellent subthreshold gate swing of 0.07 V/decade, and a high $I_{{rm on}/{rm off}}$ ratio of $≫hbox{10}^{9}$, even below the process temperature of 250 $^{circ}hbox{C}$. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived $hbox{Al}_{2} hbox{O}_{3}$ thin film.