Finite element piezothermoelasticity analysis and the active control of FGM plates with integrated piezoelectric sensors and actuators

 An efficient finite element model is presented for the static and dynamic piezothermoelastic analysis and control of FGM plates under temperature gradient environments using integrated piezoelectric sensor/actuator layers. The properties of an FGM plate are functionally graded in the thickness direction according to a volume fraction power law distribution. A constant displacement-cum-velocity feedback control algorithm that couples the direct and inverse piezoelectric effects is applied to provide active feedback control of the integrated FGM plate in a closed loop system. Numerical results for the static and dynamic control are presented for the FGM plate, which consists of zirconia and aluminum. The effects of the constituent volume fractions and the influence of feedback control gain on the static and dynamic responses of the FGM plates are examined. Received: 13 March 2002 / Accepted: 5 March 2003 The work described in this paper was supported by a grant awarded by the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. CityU 1024/01E).     

Alternating-direction implicit (ADI) formulation of the finite-difference time-domain (FDTD) method: algorithm and material dispersion implementation

The alternating-direction implicit finite-difference time-domain (ADI-FDTD) technique is an unconditionally stable time-domain numerical scheme, allowing the /spl Delta/t time step to be increased beyond the Courant-Friedrichs-Lewy limit. Execution time of a simulation is inversely proportional to /spl Delta/t, and as such, increasing /spl Delta/t results in a decrease of execution time. The ADI-FDTD technique greatly increases the utility of the FDTD technique for electromagnetic compatibility problems. Once the basics of the ADI-FDTD technique are presented and the differences of the relative accuracy of ADI-FDTD and standard FDTD are discussed, the problems that benefit greatly from ADI-FDTD are described. A discussion is given on the true time savings of applying the ADI-FDTD technique. The feasibility of using higher order spatial and temporal techniques with ADI-FDTD is presented. The incorporation of frequency dependent material properties (material dispersion) into ADI-FDTD is also presented. The material dispersion scheme is implemented into a one-dimensional and three-dimensional problem space. The scheme is shown to be both accurate and unconditionally stable.     

Mixed oxide supported hydrodesulfurization catalysts—a review

Support effects form important aspect of hydrodesulfurization (HDS) studies and mixed oxide supports received maximum attention in the last two decades. This review will focus attention on studies on mixed oxide supported Mo and W catalysts. For convenience of discussion, these are divided into Al₂O₃ containing mixed oxide supports, TiO₂ containing mixed oxide supports, ZrO₂ containing mixed oxide supports and other mixed oxide supports containing all the rest. TiO₂ containing mixed oxides received maximum attention, especially TiO₂–Al₂O₃ supported catalysts. A brief discussion about their prospects for application to ultradeep desulfurization is also included. An overview of the available literature with emphasis on research carried out in our laboratory form the contents of this publication.     

Single-polarization single-mode photonic crystal fibers

A new structure of single-polarization single-mode (SPSM) photonic crystal fiber (PCF) is proposed and analyzed by using a full-vector finite element method with anisotropic perfectly matched layers. From the numerical results it is confirmed that the proposed fiber is low-loss SPSM-PCF within the wavelengths ranging from 1.48 to 1.6 /spl mu/m, where only the slow-axis mode exists and the confinement loss is less than 0.1 dB/km.     

Changes in the gaseous H2S barrier properties of damaged silicate coated nylon 6 films

The damage imposed on SiO _x deposited nylon 6 films as a result of abrasion with a cotton cloth and Gelboflex testing was examined by evaluating the rate at which copper plates, which were enveloped by the damaged films, were corroded by H₂S. Abrasion with a cotton cloth caused some micro-cracking of the SiO _x layer and the permeation rate of H₂S approached that of the uncoated nylon 6 film. Damage to the SiO _x layer by twisting and crushing progressed gradually with the number of Gelboflex test cycles and correspondingly the corrosion rate of the copper plates increased. Comparison of the corrosion rates of the copper plates kept in the pouches made of various commercial films with those obtained for the damaged SiO _x deposited nylon 6 films showed a clear relationship between the H₂ permeation rate of the films and the corrosion rate of the copper plates by H₂S.     

Explosive chemistry: Simulating the chemistry of energetic materials at extreme conditions

In this article, we review recent atomistic computational techniques to study the electronic structure aspects and chemistry of energetic materials at high-pressure and/or high temperature. While several mechanisms have been proposed for the initial events of energetic materials at high-pressure, we explore the validity of a proposed shear-induced local metallization via molecular bond bending in the insensitive explosive TATB. We study the effect of high-stress (both uniform and uniaxial) on the electronic energy band-gap and the first chemical event of a prototypical energetic material, that of nitromethane. We also determine chemical reactions rate laws and decomposition mechanisms from a quantum-based molecular dynamics simulation of HMX, a widely used explosive material, at conditions of high density and temperature similar to that encounter under detonation. Finally, we review a new multi-scale computational tool recently developed to model the shock-induced chemistry of energetic materials at the atomistic level, and report its applicability to shocked solid nitromethane. This revised version was published online in June 2006 with corrections to the Cover Date.     

Application of novel extractants for actinide(III)/ lanthanide(III) separation in hollow-fibre modules

Separation tests using hollow-fibre modules were performed for the difficult selective extraction of trivalent actinides over fission lanthanides from acidic media. This article shows that with 2,6-di(5,6-dipropyl-1,2,4-triazin-3-yl)pyridine as the extractant, up to 94% americium could be extracted from 1.0 kmol/m³ HNO₃, with minimal lanthanide co-extraction. Using a synergistic mixture of bis(chlorophenyl)dithiophosphinic acid and tri-n-octyl phosphine oxide, tests were performed on extraction, lanthanide scrubbing and stripping. In the extraction test, up to 99.99% americium could be extracted from 0.5 kmol/m³ HNO₃, with approximately one third of the lanthanides being co-extracted. Mass transfer calculations using a consistent set of input data showed good agreement with the experiments.     

Neural net analysis of integrated circuit yield dependence on CMOS process control parameters

In this practical case study the method of self-organizing map (SOM) neural net is applied to analyze a CMOS process problem, where the device under study is a heartbeat rate monitor integrated circuit. The wafer yield is analyzed against the process control monitoring (PCM) parameter measurement values. The SOM efficiently reduces the parameter space dimensions and helps in visualizing the different parameter relations. This makes it possible to identify the most probable PCM parameters affecting the yield. Those were found out to be NMOS transistor drain current and aluminium sheet resistance.     

NANODEV: A Nanoelectronic-Device Simulation Software System

The concept and structure of the NANODEV simulation software are described. NANODEV deals with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference. It can use both simplified and sophisticated models and enables one to evaluate a wide variety of devices and configurations. The capabilities of NANODEV are illustrated by examples.