An Assessment of µ-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration

Single-grain (SG) thin-film transistors (TFTs) fabricated inside location-controlled silicon grains using the mu-Czochralski method are benchmarked for analog and RF applications. Each silicon grain is defined by excimer laser recrystallization of polysilicon. Thin-film transistors may be fabricated in this manner on silicon or low-cost flexible plastic substrates as processing temperatures remain below 350degC, making the SG-TFT a potential enabling technology for large-area highly integrated electronic systems or systems-in-package with low manufacturing cost. Operational amplifier and voltage reference circuits of varying complexity were designed and measured in order to evaluate the effects of channel position and processing variation on analog circuits. A two-stage telescopic cascode operational amplifier fabricated in an experimental 1.5 mum SG-TFT technology demonstrates a DC gain of 55 dB (unity-gain bandwidth of 6.3 MHz), while a prototype CMOS voltage reference with a power supply rejection ratio (PSRR) of 50 dB is also demonstrated. With f_T comparable to single-crystal MOSFETs of comparable gate length, the SG-TFT can also enable RF circuits for wireless applications. A 12 dB gain RF cascode amplifier with on-chip inductors and operating in the 433 MHz ISM band is demonstrated. Excellent agreement with simulations is attained using a modified BSIM-SOI model extracted from measurements of experimental SG-TFT devices.     

Waveguide polarization-independent optical circulator

We fabricated a new type of waveguide polarization-independent optical circulator which does not need a polarization-beam splitter. The circulator is based on a non-reciprocal Mach-Zehnder interferometer which consists of two waveguide Faraday rotators, two thin-film half-waveplates and two planar lightwave circuit-type 3-dB couplers. The fabricated circulator provides a 14.0-23.7-dB isolation and a 3.0-3.3 dB insertion loss at λ=1.55 μm. This circulator presents a new possibility for developing non-reciprocal devices in the field of integrated optics     

Transverse-junction-stripe GaAs-AlGaAs lasers for squeezed lightgeneration

We fabricated 850-nm GaAs transverse-junction-stripe (TJS) lasers by an improved metal-organic chemical vapor deposition (MOCVD) and double Zn diffusion process. The high V/III ratio used during the MOCVD growth significantly reduced the intermixing of GaAs active layer and AlGaAs cladding layers. The modified process realized good confinement for both carriers and photons and smaller saturable loss. We measured squeezing of -2.8 dB (-4.5 dB after correction for detection efficiency) at a pumping rate of I/I_th≈20 from these lasers, which is in close agreement with the theoretical limit. This squeezing remained unchanged under injection locking, indicating almost perfect conservation of the intensity noise correlation among the longitudinal modes. These TJS lasers had very small low-frequency 1/f noise     

Interactive multimedia communication systems for next-generationeducation using asymmetrical satellite and terrestrial networks

We propose a new concept of a hierarchical network structure for remote education. This system combines broadband satellite networks and simple terrestrial communication networks effectively to meet the demands of point-to-multipoint communications. Remote education experiments have been conducted using the proposed satellite communication networks. The results of network characteristics and degree of satisfaction are discussed. Acceptable communication quality was achieved ensuring an interactive lecture environment     

A New Approach to Suppress the Effect of Machining Error for Waveguide Septum Circular Polarizer at 230 GHz Band in Radio Astronomy

A new stepped septum-type waveguide circular polarizer (SST-CP) was developed to operate in the 230 GHz band for radio astronomy, especially submillimeter-band VLBI observations. For previously reported SST-CP models, the 230 GHz band is too high to achieve the design characteristics in manufactured devices because of unexpected machining errors. To realize a functional SST-CP that can operate in the submillimeter band, a new method was developed, in which the division surface is shifted from the top step of the septum to the second step from the top, and we simulated the expected machining error. The SST-CP using this method can compensate for specified machining errors and suppress serious deterioration. To verify the proposed method, several test pieces were manufactured, and their characteristics were measured using a VNA. These results indicated that the insertion losses were approximately 0.75 dB, and the input return losses and the crosstalk of the left- and right-hand circular polarization were greater than 20 dB at 220–245 GHz on 300 K. Moreover, a 230 GHz SST-CP was developed by the proposed method and installed in a 1.85-m radio telescope receiver systems, and then had used for scientific observations during one observation season without any problems. These achievements demonstrate the successful development of a 230 GHz SST-CP for radio astronomical observations. Furthermore, the proposed method can be applicable for observations in higher frequency bands, such as 345 GHz.     

Compositional design of Pb(Zr, Ti)O3 for highly reliableferroelectric memories

We have investigated Pb(Zr,Ti)O₃ (PZT) film composition suitable for highly reliable ferroelectric RAM (FeRAM) application. To obtain a wide operational margin for 2T/2C (two transistors and two capacitors) FeRAMs, the PZT film capacitor is needed to have a low coercive voltage (V_c) and a high dielectric constant on the polarization switching (ϵ_S) and a low dielectric constant on the nonswitching (ϵ_N), or essentially a large ϵ_S/ϵ_N ratio. Concerning the B-site composition in the perovskite structure, it is found that lowering the Zr/Ti ratio from 47/53 to Ti-richer ones increases the ratio of ϵ_S/ϵ_N as a positive effect on the wide operational margin, but increased V_c as a negative effect. Taking the balance of these factors into consideration, it is concluded that an optimum composition, such as Zr/Ti=30/70, provides the maximum operational margin. The A-site composition, on the other hand, affects the long-term reliability of a PZT capacitor. The endurance to the fatigue and imprint are enhanced by reduction of the Pb-excess and dope of La in the A-site. A La-doped PZT (Zr/Ti =30/70) capacitor is successfully integrated to the 8 kbit FeRAM macro with double-layer Al wiring to confirm the feasibility of this capacitor     

Association of cytoskeletons with the Golgi apparatus: three-dimensional observation and computer-graphic reconstruction

The association of cytoskeletons with the Golgi apparatus (GA) in cultured 3Y1 cells was investigated by stereo electron microscopy of thick sections and computer-graphic reconstruction of serial thin sections. The 3-dimensional analysis has demonstrated that: 1) both microtubules (MT) and vimentin intermediate filaments (IF) were abundantly present in close vicinity to GA, and some of them were closely associated with GA; and 2) such GA-associated cytoskeletons were attached to GA either at their termini or at their lateral side. The present observations suggest that both MT and vimentin IF are responsible for maintaining the structural integrity of GA.