变频调速技术在污水处理厂的应用

概述污水处理厂的一般工艺，简单介绍了风机、水泵等的节能特点，介绍了变频调速装置在污水处理厂各处理工段的应用。     

Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.     

东营凹陷南斜坡储集层成岩作用及对储集性能的影响

东营凹陷南斜坡孔店组岩石类型以岩屑长石砂岩为主 ,长石砂岩和岩屑砂岩次之 ,其中岩屑长石砂岩含量超过 90 %。砂岩成岩作用包括压实作用、胶结作用、溶蚀作用、交代作用等 ,其中胶结作用使储层原生孔隙迅速变差 ,而溶蚀作用是次生空隙发育的主要因素。孔店组砂岩成岩作用进入晚成岩A期 ,期间经历了早成岩A期、B期。影响成岩作用的主要因素为构造演化背景、岩石成分、沉积环境、孔隙流体性质等。     

Catalytic dehydrogenation of ethylbenzene with carbon dioxide: promotional effect of antimony in supported vanadium–antimony oxide catalyst

Alumina-supported vanadium oxide, VO_x/Al₂O₃, and binary vanadium–antimony oxides, VSbO_x/Al₂O₃, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by S_BET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO₂ pulse methods. VSbO_x/Al₂O₃ exhibited enhanced catalytic activity and especially on-stream stability compared to VO_x/Al₂O₃ catalyst. Incorporation of antimony into VO_x/Al₂O₃ increased dispersion of active VO_x species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V_0.43Sb_0.57O_x/Al₂O₃ system.     

A new time-domain discontinuous space-vector PWM technique in overmodulation region

A new discontinuous modulation method based on space-vector control is proposed and analyzed. The proposed technique employs a pulse-dropping method and is designed in the time domain. It features a very wide modulation range while maintaining the required waveform qualities and switching numbers in the overmodulation region. Since the modulation method and modulation index equation are simple, the proposed technique can be easily implemented by software and is applicable to the overmodulation region in ac motor drives. The performance indexes are discussed and experiments have been performed.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.     

糖化酶制剂辐照性能研究

研究了工业糖化酶制剂经辐照处理后各项性能的变化。结果表明,经2kGy以下剂量的γ射线处理后,可提高其贮存稳定性,改善卫生品质,不影响其正常使用。     

^60Coγ射线对刚地弓形虫缓殖子感染性的影响

应用不同剂量的~(60)Coγ射线照射含NT株弓形虫包囊的鼠脑匀浆后,以0.4％胰蛋白酶液消化,使弓形虫缓殖子从包囊中释放出来,并用生理盐水作连续10倍稀释,使成为含不同数量缓殖子的悬液,将此悬液接种小鼠,用生物检测方法确定其感染性。另设未经照射处理的缓殖子悬液感染小鼠的对照组。结果表明,γ射线0.55kGy剂量为控制鼠脑中NT株弓形虫感染性的最小有效剂量。γ射线0.1kGy剂量对弓形虫缓殖子感染性无明显影响,而0.45kGy照射后,其感染性较前者下降了10~4倍。