Performance of a New Ion Source for KSTAR Tokamak Plasma Heating

In the experimental campaign of 2010 and 2011 on KSTAR, the NBI-1 system was equipped with one prototype ion source and operated successfully, providing a neutral beam power of 0.7-1.6 MW to the tokamak plasma. The new ion source planned for the 2012 KSTAR campaign had a much more advanced performance compared with the previous one. The target performance of the new ion source was to provide a neutral deuterium beam of 2 MW to the tokamak plasma. The ion source was newly designed, fabricated, and assembled in 2011. The new ion source was then conditioned up to 64 A/100 keV over a 2-hour beam extraction and performance tested at the NB test stand （NBTS） at the Korea Atomic Energy Research Institute （KAERI） in 2012. The measured optimum perveance at which the beam divergence is a minimum was about 2.5μP, and the minimum beam divergent angle was under 1.0° at 60 keV. These results indicate that the 2.0 MW neutral beam power at 100 keV required for the heating of plasma in KSTAR can be delivered by the installation of the new ion source in the KSTAR NBI-1 system.     

PIEZOELECTRIC PROPERTIES OF ((Na0.5K0.5)1−xLix)(Nb0.8Ta0.2)O3 CERAMICS

ABSTRACT

In the ((Na_0.5K_0.5)_1?x)Li_x)(Nb_0.8Ta_0.2)O₃ (NKLNT) system, dense ceramics were developed by conventional sintering process. The electrical properties of NKLNT ceramics were investigated as a function of Li substitution. When the sample sintered at 1100°C for 4 h with the substitution of 2 mol% Li at the morphotropic phase boundary, electro-mechanical coupling factor (k_P) and piezoelectric coefficient (d₃₃) were found to reach the highest values of 0.42 and 210 pC/N, respectively. These excellent piezoelectric and electromechanical properties indicate that this system is potentially good candidate for lead-free material for a wide range of electro-mechanical transducer applications.     

Dielectrophoretic assembly of semiconducting single-walled carbon nanotube transistor

A novel burning technique for making a semiconducting single-walled carbon nanotubes (SWNTs) transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, to align and attach a bundle of SWNTs between the source and drain, the alternating (AC) voltage was applied to the electrodes. When a bundle of SWNTs was connected between two electrodes, some of metallic nanotubes and semi-conducing nanotubes existed together. The second step is to burn the metallic SWNTS by applying the voltage between two electrodes. With increasing the voltage, more current flowed through the metallic SWNTs, thus, the metallic SWNTs burnt earlier than the semiconducting one. This technique enables to obtain only semi-conducting SWNTs connection in the transistor. Through the I—V characteristic graph, the moment of metallic SWNTs burning and the characteristic of semi-conducing nanotubes were verified.