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41.
42.
通过对双模型介孔分子筛(BMMS)的改性,用疏水性的基团将介孔分子筛表面的羟基硅烷化,利用N端基和钴原子的配位将钴卟啉嫁接到介孔分子筛孔道中,得到了分散度高、热稳定性好的有机无机复合双模型介孔分子筛;并通过XRD、BET、TG-DTA等手段对制备的样品进行了表征.结果表明,硅烷化将钴卟啉成功地接枝在BMMS的表面,使钴卟啉得到较好的分散,提高了钴卟啉的热稳定性,且仍保持了BMMS的结构.制备的钴卟啉/BMMS催化剂将用于环己烷和环己烯的非均相催化氧化. 相似文献
43.
介绍了3G技术在国内外的发展情况,阐述了发展趋势,对3G技术的分类和所采用的主流技术、标准化情况进行了论述,并对CDMA2000,WCDMA和TD-SCDMA三种3G的三大主流应用技术标准进行比较分析。 相似文献
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B.‐J. Fang Y.‐J. Shan H.‐Q. Xu H.‐S. Luo Z.‐W. Yin 《Advanced functional materials》2004,14(2):169-173
Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg1/3‐Nb2/3)0.69Ti0.31]O3 (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d33, in the range of 1800–2200 pC N–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states. 相似文献
46.
Previous work has shown that prebreakdown, electrical aging, and breakdown phenomena are directly associated with charge carriers injected from electrical contacts and their subsequent dissociative trapping and recombination. In addition, the energy released from each trapping or recombination event is dissipated in the breaking of the bonds of macromolecules, thus forming free radicals and new traps in the electrically stressed insulating polymers, as predicted by Kao's model. It is this gradual degradation process that leads to electrical aging and destructive breakdown. New experimental results are presented to confirm previous findings and a new approach to inhibit the degradation process by the incorporation of suitable dopants into the polymer. The concentration of free radicals in the polymer increases with an increasing electric field at a fixed stress time of 250 h and with increasing stress time at a fixed electric field of 833 kV cm?1. The concentration of free radicals is directly related to the concentration of new traps created by stress. However, when suitable dopants are incorporated, the initiation voltage for the occurrence of electrical treeing and the breakdown strength are both increased. The dopants tend to create shallow traps and have little effect on the deep trap concentration. This implies that the dopants act as free‐radical scavengers that tend to satisfy the unpaired electrons of the broken bonds, which create new acceptor‐like electron traps and new shallow traps. By doing so, the shallow traps screen the deep traps, thereby reducing the energy released during trapping and recombination and the probability of breaking the macromolecular bonds and causing structural degradation. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 89: 3416–3425, 2003 相似文献
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Nd3+:Y0.5Gd0.5VO4晶体生长和基本特性 总被引:5,自引:0,他引:5
Nd^3 :Y0.5Gd0.5VO4晶体作为一种新的激光材料,可以用中频感应加热提拉法生长。X射线粉末衍射分析表明它的结构与Nd^3 :YVO4晶体结构相同,它的晶格常数介于YVO4和NdVO4晶格常数之间。用ICP光谱法测定晶体中Nd^3 含量为0.8at%,分凝系数为0.8,与Nd^3 :GdVO4晶体中Nd^3 的分凝系数0.78相当;用称重法测定其密度为5.00g/cm^3;用稳态纵向热流法测出其室温热导率为12.5W/mK。实验表明Nd^3 :Y0.5Gd0.5VO4晶体有希望作为高功率ID泵浦激光晶体材料。 相似文献
49.
一种PDMS薄膜型微阀的制备与性能分析 总被引:2,自引:0,他引:2
通过厚胶光刻工艺在硅片上制备SU-8胶模板,利用该模板制备了高分子聚合物PDMS(Polvdimethvlsiloxane,聚二甲基硅氧烷)微流道和薄膜结构。通过对不同结构的两层PDMS的不可逆粘接得到一种简单的阀结构,在外加气源压力作用下薄膜产生变形实现对微流道的控制。实验测量了微阀的控制气源压力与被控制液体流量之间的关系,说明膜阀的开闭性能良好。根据弹性薄膜的变形理论,对影响微阀性能的参数进行了分析,并提出了几种可行的用于薄膜微阀控制的方法。 相似文献
50.
Stewart C. Kai Shen Dwarkadas S. Scott M.L. Jian Yin 《Distributed Systems Online, IEEE》2004,5(10):1-1
The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput. 相似文献