首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1642篇
  免费   62篇
  国内免费   4篇
电工技术   24篇
综合类   1篇
化学工业   503篇
金属工艺   55篇
机械仪表   29篇
建筑科学   55篇
矿业工程   3篇
能源动力   54篇
轻工业   218篇
水利工程   8篇
石油天然气   2篇
武器工业   1篇
无线电   151篇
一般工业技术   264篇
冶金工业   184篇
原子能技术   10篇
自动化技术   146篇
  2023年   11篇
  2022年   95篇
  2021年   105篇
  2020年   24篇
  2019年   34篇
  2018年   45篇
  2017年   37篇
  2016年   67篇
  2015年   41篇
  2014年   57篇
  2013年   94篇
  2012年   89篇
  2011年   83篇
  2010年   66篇
  2009年   59篇
  2008年   63篇
  2007年   60篇
  2006年   44篇
  2005年   46篇
  2004年   44篇
  2003年   31篇
  2002年   39篇
  2001年   19篇
  2000年   19篇
  1999年   28篇
  1998年   72篇
  1997年   44篇
  1996年   38篇
  1995年   20篇
  1994年   22篇
  1993年   16篇
  1992年   15篇
  1991年   11篇
  1990年   12篇
  1989年   11篇
  1988年   5篇
  1987年   9篇
  1986年   3篇
  1985年   13篇
  1984年   15篇
  1983年   14篇
  1982年   15篇
  1981年   7篇
  1980年   3篇
  1979年   3篇
  1978年   7篇
  1977年   12篇
  1976年   18篇
  1941年   4篇
  1940年   3篇
排序方式: 共有1708条查询结果,搜索用时 15 毫秒
21.
This paper describes a new multi-heterojunction n +pp photovoltaic infrared photodetector. The device has been developed specifically for operation at temperatures of 200–300K in the long wavelength (8–14 μm) range of the infrared spectrum. The new structure solves the perennial problems of poor quantum efficiency and low dynamic resistance found in conventional long wavelength infrared photovoltaic detectors when operated near room temperature. Computer simulations show that devices with properly optimized multiple heterojunctions are capable of achieving the performance limits imposed by the statistical nature of thermal generation-recombination processes. In order to demonstrate the technology, multiple heterojunction devices have been fabricated on epilayers grown by isothermal vapor phase epitaxy of HgCdTe and in situ As p-type doping. The detector structures were formed using a combination of conventional dry etching, angled ion milling, and angled thermal evaporation for contact metal deposition. These multi-junction n +pp HgCdTe heterostructure devices exhibit performances which make them useful for many applications. D* of optically immersed multiple heterostructure photovoltaic detectors exceeding 108cmHz1/2/W were measured at λ=10.6 μm and T=300K.  相似文献   
22.
One of the greatest disadvantages of the weighted signal averaging method is its sensitivity to the presence of noise and outliers in data and the need to estimate the noise variance in all signal cycles. The robust weighted averaging method based on the epsilon-insensitive loss function is free of these disadvantages, but has a very high computational burden and requires a choice of the insensitivity parameter epsilon. In this study, a new computationally effective algorithm for robust weighted averaging with automatic adjustment of the insensitivity parameter is introduced.  相似文献   
23.
Likelihood based hierarchical clustering   总被引:10,自引:0,他引:10  
This paper develops a new method for hierarchical clustering. Unlike other existing clustering schemes, our method is based on a generative, tree-structured model that represents relationships between the objects to be clustered, rather than directly modeling properties of objects themselves. In certain problems, this generative model naturally captures the physical mechanisms responsible for relationships among objects, for example, in certain evolutionary tree problems in genetics and communication network topology identification. The paper examines the networking problem in some detail to illustrate the new clustering method. More broadly, the generative model may not reflect actual physical mechanisms, but it nonetheless provides a means for dealing with errors in the similarity matrix, simultaneously promoting two desirable features in clustering: intraclass similarity and interclass dissimilarity.  相似文献   
24.
Internet tomography   总被引:5,自引:0,他引:5  
Today's Internet is a massive, distributed network which continues to explode in size as e-commerce and related activities grow. The heterogeneous and largely unregulated structure of the Internet renders tasks such as dynamic routing, optimized service provision, service-level verification, and detection of anomalous/malicious behavior increasingly challenging tasks. The problem is compounded by the fact that one cannot rely on the cooperation of individual servers and routers to aid in the collection of network traffic measurements vital for these tasks. In many ways, network monitoring and inference problems bear a strong resemblance to other "inverse problems" in which key aspects of a system are not directly observable. Familiar signal processing problems such as tomographic image reconstruction, system identification, and array processing all have interesting interpretations in the networking context. This article introduces the new field of network tomography, a field which we believe will benefit greatly from the wealth of signal processing theory and algorithms  相似文献   
25.
This paper describes the effect of geometry in charge-trap (CT) memory devices. We first theoretically analyze the impact of the curvature radius on the behavior of the gate current in Gate-All-Around devices, and then describe the change to make to planar model in order to fit the cylindrical devices characteristics. This model is used to simulate Nanocrystal and SONOS program, erase and retention behaviors. The dynamics enhancement during program/erase due to the bending of the active region in such cylindrical devices is explained. The scaling perspectives conclude this paper.  相似文献   
26.
The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.  相似文献   
27.
Power and bandwidth are scarce resources in dense wireless sensor networks and it is widely recognized that joint optimization of the operations of sensing, processing and communication can result in significant savings in the use of network resources. In this paper, a distributed joint source-channel communication architecture is proposed for energy-efficient estimation of sensor field data at a distant destination and the corresponding relationships between power, distortion, and latency are analyzed as a function of number of sensor nodes. The approach is applicable to a broad class of sensed signal fields and is based on distributed computation of appropriately chosen projections of sensor data at the destination - phase-coherent transmissions from the sensor nodes enable exploitation of the distributed beamforming gain for energy efficiency. Random projections are used when little or no prior knowledge is available about the signal field. Distinct features of the proposed scheme include: (1) processing and communication are combined into one distributed projection operation; (2) it virtually eliminates the need for in-network processing and communication; (3) given sufficient prior knowledge about the sensed data, consistent estimation is possible with increasing sensor density even with vanishing total network power; and (4) consistent signal estimation is possible with power and latency requirements growing at most sublinearly with the number of sensor nodes even when little or no prior knowledge about the sensed data is assumed at the sensor nodes.  相似文献   
28.
Extension and source/drain design for high-performance FinFET devices   总被引:2,自引:0,他引:2  
Double gate devices based upon the FinFET architecture are fabricated, with gate lengths as small as 30 nm. Particular attention is given to minimizing the parasitic series resistance. Angled extension implants and selective silicon epitaxy are investigated as methods for minimizing parasitic resistance in FinFETs. Using these two techniques high performance devices are fabricated with on-currents comparable to fully optimized bulk silicon technologies. The influence of fin thickness on device resistance and short channel effects is discussed in detail. Devices are fabricated with fins oriented in the <100> and <100> directions showing different transport properties.  相似文献   
29.
30.
A system with known minimal cuts is considered. In order to compute its reliability a binary tree is constructed with nodes being assigned numerical values. The value of each non-leaf node is a linear combination of its child nodes' values. The values of leaf nodes can be computed in a very simple way. The value of the root node is the system's reliability. The presented method is a memory saving one. Moreover, it is possible to apply parallel computation to the nodes located on the same level, which may significantly reduce the computing time.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号