Regenerative effects by temperature variations in dye-sensitized solar cells

The effect of repeated temperature variations on the performance of both fresh and aged dye-sensitized solar cells with liquid and semi-solid electrolytes has been studied. The cell performance was characterized with IV-curves obtained at different cell operating temperatures and electrochemical impedance spectroscopy measurements before and after the temperature treatments. Consecutive temperature rampings of the aged cells did regenerate the cell function, so that the total efficiency drop over the observation period was on average 18%/unit less for the temperature-treated cells than for reference cells aged at constant temperature.     

Persistent and nonpersistent Listeria monocytogenes contamination in meat and poultry processing plants

Contamination analysis of persistent and nonpersistent Listeria monocytogenes strains in three meat processing plants and one poultry processing plant were performed in order to identify factors predisposing to or sustaining persistent plant contamination. A total of 596 L. monocytogenes isolates were divided into 47 pulsed-field gel electrophoresis (PFGE) types by combining the restriction enzyme patterns of AscI (42 patterns) and ApaI (38 patterns). Persistent and nonpersistent strains were found in all plants. Nonpersistent PFGE types were found mostly at one sampling site, with the processing environment being the most common location, whereas the persistent strains were found at several sampling sites in most cases. The processing machines were frequently contaminated with persistent L. monocytogenes PFGE types, and it was of concern that surfaces having direct contact with the products were contaminated. The role of the processing machines in sustaining contamination and in contaminating the products appeared to be important because the final product of several processing lines was contaminated with the same L. monocytogenes PFGE type as that found in the processing machine. The proportion of persistent PFGE types in heat-treated products was eight times higher than in the raw products, showing the importance of the persistent PFGE types as contaminants of the final heat-treated products. The contamination status of the processing lines and machines appeared to be influenced by the compartmentalization of the processing line, with poor compartmentalization increasing L. monocytogenes contamination. The separation of raw and post-heat treatment areas seemed especially important in the contamination status of post-heat treatment lines.     

Novel detector implementations for 3G LTE downlink and uplink

We summarize our recent state-of-the-art programmable and reconfigurable detector and QR decomposition (QRD) implementations targeting 3G long term evolution (LTE) downlink and uplink requirements. The downlink transmission is based on the orthogonal frequency division multiplexing, whereas the uplink transmission uses a single-carrier frequency-division multiple access. The downlink implementations are based on the programmable transport triggered architecture (TTA) which provides a flexible and energy efficient architecture template. In TTA detector implementation, the LTE detection rate requirements up to 20 MHz bandwidth and 4 × 4 antenna system with 64-QAM, are achieved by using 1–6 programmable cores in parallel. Each core runs at 277 MHz clock frequency and consumes 55.5–64.0 mW depending on the detector configuration. The downlink detector is based on the selective spanning with fast enumeration algorithm. The uplink field-programmable gate array (FPGA) detector implementation is targeted for 4 × 4 antenna system and 64-QAM achieving a detection rate requirement for 20 MHz bandwidth. The used FPGA board for uplink implementation is Xilinx Virtex-6 and the implementation has been carried out using Xilinx Vivado high level synthesis tool. Two different detector architectures are implemented. The first one achieves the detection rate requirement with a single processing block running at 231 MHz and the latter one with four blocks in parallel, each running at 247 MHz. The implemented detector is based on the K-best algorithm. A multiple-input multiple-output receiver requires QRD to produce valid inputs for the detector. In addition to detector implementations, QRD is also implemented on both TTA and FPGA. Modified Gram–Schmidt algorithm is used in both QRD implementations.     

On TiN-particle fuel based helium-cooled transmutation systems

We have designed a sub-critical helium-cooled core with TiN-coated particle fuel, dedicated to the transmutation of minor actinides. The excellent neutronic properties of helium allows for a low plutonium fraction in the fuel, which yields a low reactivity swing, Δk = 2600 pcm, for a burnup of 31.2%. Further the neutron spectrum is hard, limiting the buildup of Cm and Cf. The high burnup combined with a minor actinide burning rate of 355 kg/GWth year makes the present design an attractive transmutation system.     

Comparison of pulse responses of step-index fibres

Pulse responses of step-index fibres with V parameters lying between 2 and 40 are presented. The results are based on computations using the normal WKB, a modified WKB, the `weakly guiding? and the `exact? eigenvalue equations.     

Organic memory using [6,6]-phenyl-C(61) butyric acid methyl ester: morphology, thickness and concentration dependence studies

We report a simple memory device in which the fullerene-derivative [6,6]-phenyl-C(61) butyric acid methyl ester (PCBM) mixed with inert polystyrene (PS) matrix is sandwiched between two aluminum (Al) electrodes. Transmission electron microscopy (TEM) images of PCBM:PS films showed well controlled morphology without forming any aggregates at low weight percentages (<10?wt%) of PCBM in PS. Energy dispersive x-ray spectroscopy (EDX) analysis of the device cross-sections indicated that the thermal evaporation of the Al electrodes did not lead to the inclusion of Al metal nanoparticles into the active PCBM:PS film. Above a threshold voltage of <3?V, independent of thickness, a consistent negative differential resistance (NDR) is observed in devices in the thickness range from 200 to 350?nm made from solutions with 4-10?wt% of PCBM in PS. We found that the threshold voltage (V(th)) for switching from the high-impedance state to the low-impedance state, the voltage at maximum current density (V(max)) and the voltage at minimum current density (V(min)) in the NDR regime are constant within this thickness range. The current density ratio at V(max) and V(min) is more than or equal to 10, increasing with thickness. Furthermore, the current density is exponentially dependent on the longest tunneling jump between two PCBM molecules, suggesting a tunneling mechanism between individual PCBM molecules. This is further supported with temperature independent NDR down to 240?K.