2008年一季度元器件价格将快速下跌

当元器件市场的季节性需求高峰过去以后,大多数供货商们仍然握有大量的存货。许多供货商对今年的消费需求持高度谨慎的态度。目前,过剩的库存是他们今年的主要问题之一。事实上,由于需求的不确定性和产能扩张,库存过剩是2008年1季度的现实问题。假日需求的情况仍然是一个未知数,iSuppli公司预测,电子元器件的供货将足以满足市场的需求。     

Single-channel blind estimation of arterial input function and tissue impulse response in DCE-MRI

Multipass dynamic MRI and pharmacokinetic modeling are used to estimate perfusion parameters of leaky capillaries. Curve fitting and nonblind deconvolution are the established methods to derive the perfusion estimates from the observed arterial input function (AIF) and tissue tracer concentration function. These nonblind methods are sensitive to errors in the AIF, measured in some nearby artery or estimated by multichannel blind deconvolution. Here, a single-channel blind deconvolution algorithm is presented, which only uses a single tissue tracer concentration function to estimate the corresponding AIF and tissue impulse response function. That way, many errors affecting these functions are reduced. The validity of the algorithm is supported by simulations and tests on real data from mouse. The corresponding nonblind and multichannel methods are also presented.     

Critical Layer Thickness in Exponentially Graded Heteroepitaxial Layers

Exponentially graded semiconductor layers are of interest for use as buffers in heteroepitaxial devices because of their tapered dislocation density and strain profiles. Here we have calculated the critical layer thickness for the onset of lattice relaxation in exponentially graded In _x Ga_1?x As/GaAs (001) heteroepitaxial layers. Upwardly convex grading with \( x = x_{\infty } \left( {1 - {\rm e}^{ - \gamma /y} } \right) \) was considered, where y is the distance from the GaAs interface, γ is a grading length constant, and x _∞ is the limiting mole fraction of In. For these structures the critical layer thickness was determined by an energy-minimization approach and also by consideration of force balance on grown-in dislocations. The force balance calculations underestimate the critical layer thickness unless one accounts for the fact that the first misfit dislocations are introduced at a finite distance above the interface. The critical layer thickness determined by energy minimization, or by a detailed force balance model, is approximately \( h_{\rm{c}} \approx <Exponentially graded semiconductor layers are of interest for use as buffers in heteroepitaxial devices because of their tapered dislocation density and strain profiles. Here we have calculated the critical layer thickness for the onset of lattice relaxation in exponentially graded In _x Ga_1−x As/GaAs (001) heteroepitaxial layers. Upwardly convex grading with x = x_￥ ( 1 - e ^{- g/y} ) x = x_{\infty } \left( {1 - {\rm e}^{ - \gamma /y} } \right) was considered, where y is the distance from the GaAs interface, γ is a grading length constant, and x _∞ is the limiting mole fraction of In. For these structures the critical layer thickness was determined by an energy-minimization approach and also by consideration of force balance on grown-in dislocations. The force balance calculations underestimate the critical layer thickness unless one accounts for the fact that the first misfit dislocations are introduced at a finite distance above the interface. The critical layer thickness determined by energy minimization, or by a detailed force balance model, is approximately h_c ? < h_{\rm{c}} \approx < Although these results were developed for exponentially graded In _x Ga_1−x As/GaAs (001), they may be generalized to other material systems for application to the design of exponentially graded buffer layers in metamorphic device structures such as modulation-doped field-effect transistors and light-emitting diodes.     

UNICORE 6 — Recent and Future Advancements

UNICORE is a European Grid Technology with more than 10 years of history. Originating from the Supercomputing domain, the latest version UNICORE 6 has turned into a general-purpose Grid technology that follows established standards and offers a rich set of features to its users. The paper starts with an architectural insight into UNICORE 6, highlighting the workflow features, standards and the different clients. Next, the current state of advancement is presented by describing recent developments. The paper closes with an outlook on future planned developments.     

UPTIME: an IMS-based mobility framework for next generation mobile networks

Seamless inter-technology mobility is one of the fundamental requirements of next generation mobile networks. For seamless mobility, handover delay and packet loss should be minimized. However, existing solutions suffer from a number of shortcomings in satisfying these requirements: first, handover preparation schemes fail to minimize the handover delay as much as possible. Second, minimizing packet loss which is usually using soft handover (SHO) schemes are excessively wasteful of scarce resources. In this paper, we propose the uninterrupted proactive connection transfer for IMS mobility enhancement (UPTIME) mobility framework which achieves seamless mobility while minimizing excessive power and radio resource consumption. UPTIME incorporates two mechanisms; a proactive handover preparation method and an optimized SHO technique for handover execution. We demonstrate the benefits of the proposed framework through both analysis and simulation. Our simulation results for typical LTE/WiMAX handovers show that the handover preparation delay can be reduced by 70 %, and good packet loss performance can be achieved whilst saving 43 % of radio resources and 48 % of battery power.     

A performance and implementation comparison of bidirectional anddual bus 2-D WDM multiple-plane optical interconnections with row-columnmultihop network structures

Bidirectional and dual bus wavelength division multiplexing (WDM) two-dimensional (2-D) multiple-plane optical interconnections with row-column multihop network structures using vertical-cavity surface-emitting lasers (VCSELs) and wavelength-selective detectors are analyzed and compared in terms of the expected number of hops (switching delay) and practical implementation considerations. The bidirectional WDM optical interconnection significantly reduces the necessary implementation hardware while maintaining the performance very closely compared to the dual bus architecture. Both WDM structures show significant performance improvements even when only three to five wavelengths are used. Also, the multihop efficiency is analyzed with the consideration of both electrical hops and optical hops     

Impact of the injection‐level‐dependent lifetime on Voc,FF, ideality m,J02, and the dim light response in a commercial PERC cell

The injection‐level‐dependent (ILD) lifetime of the silicon wafer impacts many characteristics of the final photovoltaic cell. While efficiency is commonly understood to be impacted by the silicon bulk lifetime (at the maximum power point injection level), this work demonstrates the wide ranging impacts of ILD lifetime on the V_oc, the fill factor (FF), the diode ideality factor m, and the dim light response. Instead of a two‐diode model, we utilize a boundary + ILD bulk lifetime model to analyze a commercial passivated emitter rear contact (PERC) cell featuring an AlO_x dielectric rear passivation. The ILD lifetime is directly measured and used to calculate the bulk recombination current across injection levels. With this boundary + ILD lifetime model, we demonstrate the role of the ILD lifetime on many cell parameters in this PERC cell. For most high efficiency commercial p‐type monocrystalline solar cells, the typically lower bulk lifetime at the maximum power point versus the lifetime at the open circuit point reduces the measured FF and pseudo‐FF. This work illustrates that for a commercial PERC cell with AlO_x rear passivation, the ILD lifetime is the primary mechanism behind reduced FF, ideality factors greater than 1, and the source of the J₀₂ term in the two‐diode model. The crucial implications of this work are not only to better understand commercial PERC cell loss mechanisms but also to encourage a focus on different metrics in cell diagnostics. One such metric is the V_oc at 0.1 or 0.05 suns. Copyright © 2016 John Wiley & Sons, Ltd.     

Copper‐Based Nanostructured Coatings on Natural Cellulose: Nanocomposites Exhibiting Rapid and Efficient Inhibition of a Multi‐Drug Resistant Wound Pathogen,A. baumannii,and Mammalian Cell Biocompatibility In Vitro

This paper describes a layer‐by‐layer (LBL) electrostatic self‐assembly process for fabricating highly efficient antimicrobial nanocoatings on a natural cellulose substrate. The composite materials comprise a chemically modified cotton substrate and a layer of sub‐5 nm copper‐based nanoparticles. The LBL process involves a chemical preconditioning step to impart high negative surface charge on the cotton substrate for chelation controlled binding of cupric ions (Cu²⁺), followed by chemical reduction to yield nanostructured coatings on cotton fibers. These model wound dressings exhibit rapid and efficient killing of a multidrug resistant bacterial wound pathogen, A. baumannii, where an 8‐log reduction in bacterial growth can be achieved in as little as 10 min of contact. Comparative silver‐based nanocoated wound dressings–a more conventional antimicrobial composite material–exhibit much lower antimicrobial efficiencies; a 5‐log reduction in A. baumannii growth is possible after 24 h exposure times to silver nanoparticle‐coated cotton substrates. The copper nanoparticle–cotton composites described herein also resist leaching of copper species in the presence of buffer, and exhibit an order of magnitude higher killing efficiency using 20 times less total metal when compared to tests using soluble Cu²⁺. Together these data suggest that copper‐based nanoparticle‐coated cotton materials have facile antimicrobial properties in the presence of A. baumannii through a process that may be associated with contact killing, and not simply due to enhanced release of metal ion. The biocompatibility of these copper‐cotton composites toward embryonic fibroblast stem cells in vitro suggests their potential as a new paradigm in metal‐based wound care and combating pathogenic bacterial infections.     

Properties and Printability of Inkjet and Screen-Printed Silver Patterns for RFID Antennas

We report the modeling, and geometrical and electrical characterization, of inkjet and screen-printed patterns on different polymeric substrates for use as antennas in radio-frequency identification (RFID) applications. We compared the physical and electrical characteristics of two silver nanoparticle-based commercial inkjet-printable inks and one screen-printable silver paste, when deposited on polyimide (PI), polyethylene terephthalate (PET), and polyetherimide (PEI) substrates. First, the thickness of the inkjet-printed patterns was predicted by use of an analytical model based on printing conditions and ink composition. The predicted thickness was confirmed experimentally, and geometrical characterization of the lines was completed by measuring the root-mean-square roughness of the patterns. Second, direct-current electrical characterization was performed to identify the printing conditions yielding the lowest resistivity and sheet resistance. The minimum resistivity for the inkjet-printing method was 8.6 ± 0.8 μΩ cm, obtained by printing four stacked layers of one of the commercial inks on PEI, whereas minimum resistivity of 44 ± 7 μΩ cm and 39 ± 4 μΩ cm were obtained for a single layer of screen-printed ink on polyimide (PI) with 140 threads/cm mesh and 90 threads/cm mesh, respectively. In every case, these minimum values of resistivity were obtained for the largest tested thickness. Coplanar waveguide transmission lines were then designed and characterized to analyze the radio-frequency (RF) performance of the printed patterns; minimum transmission losses of 0.0022 ± 0.0012 dB/mm and 0.0016 ± 0.0012 dB/mm measured at 13.56 MHz, in the high-frequency (HF) band, were achieved by inkjet printing on PEI and screen printing on PI, respectively. At 868 MHz, in the ultra-high-frequency band, the minimum values of transmission loss were 0.0130 ± 0.0014 dB/mm for inkjet printing on PEI and 0.0100 ± 0.0014 dB/mm for screen printing on PI. Although the resistivity achieved is lower for inkjet printing than for screen printing, RF losses for inkjetted patterns were larger than for screen-printed patterns, because thicker layers were obtained by screen printing. Finally, several coil inductors for the HF band were also fabricated by use of both printing techniques, and were used as antennas for semi-passive smart RFID tags on plastic foil capable of measuring temperature and humidity.     

与金属兼容的离子注入光刻胶去除剂

本文介绍了一种全湿法,高活性的光刻胶去除溶剂,可以去除注入硬化的光刻胶,并具备对金属的兼容能力。