Microwave active resonator band-pass filters in various mmic technologies

In this article, two topologies of L-C parallel active resonators are presented. These circuits are realized in MMIC technology, using three transistors which could be MESFET, hemt or HBT. The survey of these resonators shows the possibility, by controling the values of a resistor and/or a capacitor, on the one hand, to tune the resonance frequency of these circuits, and on the other hand, to cancel out their losses so as to obtain negative conductance. Compact, lossless and narrow-band filters are then implemented using previous active resonators. To date, the use of mesfet technology has reduced the synthesis of such active filters in S-band and at X-band low frequencies. Now, however, hemt and HBT technologies allow the extension of their implementation to the whole X-band. This survey is illustrated by the simulated response of a 10 GHz filter with a 500 MHz 3 dB bandwidth. The mmic technology is a 0.2 μm hemt one. The simulated performances of this filter achieve a mean transmission gain of 0. 5 dB, with a reflection loss higher than 10 dB at 10 GHz,     

Experimental study of heat transfer in oscillating flow

This paper describes an experimental study of heat transfer in oscillating flow inside a cylindrical tube. Profiles of temperature are taken inside the wall and in the fluid from an instrumented test rig, in different conditions of oscillating flow. Profiles obtained allow the observation of the wall effect on heat transfer. A method using the inverse heat conduction principle allows the characterization of local heat transfers at the fluid-solid interface. Finally, a comparison between global and local approaches of heat transfer shows the difficulty of defining a dimensionless heat flux density to model local heat transfer in oscillating flow.     

Transformations of (14C-lignin) cell walls of wheat by rumen microorganisms

The lower halves of apical internodes of wheat harvested at the flowering stage were labelled with [U-¹⁴C] phenylalanine (phe) or with [O¹⁴CH₃] sinapic acid (sin). Cell wall residues (CWR) and saponified residues (SR) were incubated in a fermenter simulating the rumen for 7 days with rumen fluid or without microorganisms (controls). PheCWR was labelled in all lignin units (measured as aldehydes from nitrobenzene oxidation), in phenolic acids and slightly in proteins. Labelling of pheSR was more lignin-specific. SinCWR and sinSR were specifically labelled in syringyl units of lignin. The fermentation of CWR resulted in phenylpropane-derived unit losses in the following decreasing order: ferulic acid>p-coumaric acid>syringaldehyde>vanillin>p-hydroxybenzaldehyde. If allowance is made for slight losses in controls, 61, 52, 61 and 63% of the phenylpropanes of pheCWR, sinCWR, pheSR and sinSR, respectively, were transformed into an acid-precipitable fraction, an acid-soluble fraction and ¹⁴CO_2. The comparison of pheCWR and sinCWR degradation showed that syringyl units were solubilised into acid-precipitable molecules to a greater extent than the other lignin units; demethylation of the syringyl units of lignins was also evident from the different productions of ¹⁴CO₂. Alkali-resistant lignins of SR were mainly transformed into acid-precipitable molecules and were weakly degraded. Lignin solubilisation and degradation seem to be governed by different mechanisms which depend on both cell wall structure and rumen microflora.     

The Simulation of Repolarization Events of the Cardiac Purkinje Fiber Action Potential

A mathematical model based on the formalism of the Hodgkin-Huxley equations was implemented on a microcomputer system and used to simulate the membrane action potential of cardiac Purkinje fibers. The complete model is a modification of the representation used by McAllister et al. [1], mainly with respect to the outward current components during the late plateau, the repolarization phase, and the slow repolarization phase of the action potential. A new formulation of the potassium conductance was used, involving two distinct types of ionic channels corresponding, respectively, to the experimentally observed inward-going and outward-going rectification properties of the Purkinje fiber membrane. A unified representation of the Purkinje fiber current components was thus obtained which provides a more satisfactory interpretation of experimental results than was possible with the original model of McAllister et al. [1]. The membrane channel for the potassium pacemaker current is characterized by a set of first-order activation?inactivation variables and a constant fully activated conductance. The other channel carries the potassium current involved in the late plateau and repolarization phase of the action potential.     

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors with amorphous semiconductor layer

In this paper we show that thiolated self-assembled monolayers (SAMs) can be used to anchor source–drain gold electrodes on the substrate, leading to excellent electrical performances of the organic field-effect transistor (OFET) on a par with those using a standard electrode process. Using an amorphous semiconductor and a gate dielectric functionalized with SAMs bearing different dipole moments, we demonstrate that we can tune the threshold voltage alone, while keeping nearly unchanged the other electrical properties (hole carrier mobility, I_on/I_off ratio, subthreshold swing). This differs from previous studies for which SAMs functionalization induced significant changes in all the OFET electrical performances. This result opens doors to design organic circuits using reproducible amorphous semiconductor based OFETs for which only the threshold voltage can be tuned on demand.     

A new methodology for the identification of ball bond degradation during high-temperature aging tests on devices in standard plastic packages

We describe a new methodology for the “in situ” identification of wire-bond degradation at early stages during high-temperature aging tests on devices with standard plastic packages. This methodology is based on the measurement of the changes in wire bond resistance, which is deduced from the I(V) characteristics of the ESD protection diodes on each contact pad of the circuit. In a first stage, the measurement procedure is described, with emphasis on the initial temperature calibration. This procedure allows for an “in situ” measurement sequence, where the packages stay in the aging chamber, at elevated temperature, during the electrical tests on the pad connections performed at different aging durations. By following accurately the package temperature, using a thermocouple, it is possible to correct for slight changes and thus get a reliable I–V measurement for each interconnection. In the second stage, the aging test results are described, showing the evolution of each individual interconnection. We were able to identify the onset of wire-bond degradation through the progressive increase of their resistance. To allow for better determination of the degradation process, once an increase in wire bond resistance was detected, complete I(V) curves were recorded at the pin(s) of interest. For each pin of a TQFP64 package, the tests were performed at least twice a day, with increased density when initial failure is detected (one complete measurement every 3 h). This strategy allowed for the detection of different behaviors on the wire bonds: good ball bonds (i.e. ball bonds with no change in their resistance), ball bond with intermittent opens (these ball bonds are in the process of degradation, and thermo-mechanical stresses induced in the resin by very small temperature changes are sufficient to open or close the circuits) and completely destroyed ball bonds, for which the resistance stays in an “high” level. This approach to wire-bond degradation in plastic packages is very powerful in terms of the number of interconnections which can be followed “in real time” and especially has the advantage, over other classical approaches, that the devices under test stay operational, contrary to what occurs with other types of destructive testing. These electrical test results are compared with metallographic investigations performed after a series of mechanical tests on the ball bonds (wire pull/ball shear tests) on a set of identical devices which undergone exactly the same High Temperature Storage (HTS) aging for 2000 h at 165 °C.     

Photonic Side-Channel Analysis of Arbiter PUFs

As intended by its name, physically unclonable functions (PUFs) are considered as an ultimate solution to deal with insecure storage, hardware counterfeiting, and many other security problems. However, many different successful attacks have already revealed vulnerabilities of certain digital intrinsic PUFs. This paper demonstrates that legacy arbiter PUF and its popular extended versions (i.e., feed-forward and XOR-enhanced) can be completely and linearly characterized by means of photonic emission analysis. Our experimental setup is capable of measuring every PUF internal delay with a resolution of 6 ps. Due to this resolution, we indeed require only the theoretical minimum number of linear independent equations (i.e., physical measurements) to directly solve the underlying inhomogeneous linear system. Moreover, it is not required to know the actual PUF responses for our physical delay extraction. We present our practical results for an arbiter PUF implementation on a complex programmable logic device manufactured with a 180 nm process. Finally, we give an insight into photonic emission analysis of arbiter PUF on smaller chip architectures by performing experiments on a field programmable gate array manufactured with a 60 nm process.     

POLYBiNN: Binary Inference Engine for Neural Networks using Decision Trees

Journal of Signal Processing Systems - Convolutional Neural Networks (CNNs) and Deep Neural Networks (DNNs) have gained significant popularity in several classification and regression applications....     

High pass filter with above IC integrated SrTiO3 high K MIM capacitors

This paper describes realization and characterization of SrTiO₃ (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surface capacitance achieved is 10 nF/mm² with capacitance value of 1.2 nF. The process for STO MIM fabrication does not exceed 400 °C, which is compatible with interconnections. Typical K and dielectric losses values obtained are, respectively 110% and 2%. Yield obtained reaches 83% for capacitors. A functional high pass filter using these STO capacitors was realized in this study. It exhibits a cut-off frequency at 6.5 kHz and a constant gain at higher frequencies of −1.3 dB.     

Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green’s Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V_G, i.e. an improved slope characteristic, and hence an improved I_on/I_off ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant I_on/I_off ratio improvement, even with threshold voltage below 0.2 V and supply voltage V_dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.