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91.
92.
在URRS系统施工过程中 ,生产管处于多种变化复杂的应力和变形状态下 ,若出现失稳、渗漏、刺穿和断裂等事故 ,将造成巨大经济损失。为此 ,开展了水力喷射径向水平井用生产管的焊接方法、焊接设备、焊接工艺过程和焊接接头力学性能评定方法的试验研究。通过研究和试验 ,管材基本上实现了国产化 ,与之相匹配的焊接材料、焊接工艺以及质量检测技术已基本配套和规范化 ,形成了一套稳定的、可靠性较高且能完全满足现场工况的施工体系和质量保证体系 相似文献
93.
Jin-Wei Shi Chi-Kuang Sun 《Lightwave Technology, Journal of》2002,20(11):1942-1950
We present the theory and design of a tapered line distributed photodetector (TLDP). In the previously demonstrated velocity-matched distributed photodetector (VMDP), high electrical bandwidth is achieved by proper termination in the input end to absorb reverse traveling waves, sacrificing one-half of the quantum efficiency. By utilizing the tapered line structure and phase matching between optical waves and microwaves in our analyzed structure, a traveling-wave photodetector is more realizable and ultrahigh bandwidth can be attained due to removal of the extra input dummy load that sacrifices one-half of the total quantum efficiency. To investigate the advantages of TLDP over VMDP, we calculate their electrical bandwidth performances by using an analytic photodistributed current model. We adopted low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal (MSM) traveling-wave photodetectors as example unit active devices in the analytic bandwidth calculation for their high-speed and high-power performances. Both VMDP and TLDP in our simulation are assumed to be transferred onto glass substrates, which would achieve high microwave velocity/impedance and make radiation loss negligible. The simulated bandwidth of a properly designed LTG GaAs MSM TLDP is /spl sim/325 GHz, which is higher than the simulated bandwidth of the LTG GaAs MSM VMDP with an open-circuit input end (/spl sim/240 GHz) and is almost comparable to the simulated bandwidth of an input-terminated LTG GaAs MSM VMDP (/spl sim/330 GHz). This proposed method can be applied to the design of high-bandwidth distributed photodetectors for radio-frequency photonic systems and optoelectronic generation of high-power microwaves and millimeter waves. 相似文献
94.
Liang Y.C. Wenjiang Zeng Pick Hong Ong Zhaoxia Gao Jun Cai Balasubramanian N. 《Electron Device Letters, IEEE》2002,23(12):700-703
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology. 相似文献
95.
高质量ZnO薄膜的退火性质研究 总被引:3,自引:0,他引:3
在LP-MOCVD中,我们利用Zn(C2H5)2作Zn源,CO2作氧源,在(0002)蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜,并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后,(0002)ZnO的XRD衍射峰强度显著增强,c轴晶格常数变小,同时(0002)ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大,这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小,PL谱的带边发射则加强,并出现红移,蓝带发光被有效抑制,表明ZnO薄膜的质量得到提高。 相似文献
96.
风扇磨煤机ZGMn13冲击板的失效分析 总被引:1,自引:1,他引:0
ZGMn13冲击板的失效方式为不同角度的粒子撞击和冲刷,其表面可以分为三个典型的磨损区域:低角度撞击区、高角度撞击区和冲刷区。详细分析了该三个磨损区域的磨损机理。次表面分析的结果表明,在低负度撞击和冲刷条件下,高锰钢未能充分加工硬化,耐磨性提高有限。 相似文献
97.
98.
99.
Interfacial segregation of Ti in the brazing of diamond grits onto a steel substrate using a Cu-Sn-Ti brazing alloy 总被引:1,自引:0,他引:1
Wen-Chung Li Shun-Tian Lin Cheng Liang 《Metallurgical and Materials Transactions A》2002,33(7):2163-2172
Diamond grits were brazed onto a steel substrate using a prealloyed Cu-10Sn-15Ti (wt pct) brazing alloy at 925 °C and 1050
°C. Due to the relatively high concentration of Ti in the brazing alloy, the braze matrix exhibited a composite structure,
composed of β-(Cu,Sn), a Cu-based solid solution, and various intermetallic compounds with different morphologies. The reaction of Ti with
diamond yielded a continuous TiC layer on the surfaces of the diamond grits. On top of the TiC growth front, an intermetallic
compound, composed of Sn and Ti, nucleated and grew into a randomly interwoven fine lacey structure. An interfacial structure
developed as the interwoven fine lacey phase was semicoherently bonded to the TiC layer, with the Cu-based braze matrix filling
its interstices. The thickness of such a composite layer was increased linearly with the square root of isothermal holding
time at 925 °C, complying with the law of a diffusion-controlled process. However, at 1050 °C, the segregation behavior of
Ti and Sn to the interfaces between the TiC layer and the braze matrix diminished, due to the increased solubility of Ti in
the Cu-based liquid phase. The enhanced dissolution of Ti in the Cu-based liquid phase at 1050 °C also caused the precipitation
of rod-like CuTi with an average diameter of about 0.2 μm during cooling. SnTi3 was the predominant intermetallic compound and existed in three different forms in the braze matrix. It existed as interconnected
grains of large size which either floated to the surface of the braze matrix or grew into faceted grains. It also exhibited
a nail-like structure with a mean diameter of about 1 μm for the rod section and a lamellar structure arising from a eutectic reaction during cooling. 相似文献
100.
Tsu-Hua Ai Jiann-Fuh Chen Tsorng-Juu Liang 《Industrial Electronics, IEEE Transactions on》2002,49(3):595-597
To overcome the problem of unequal switching loss in power switches, in conventional hybrid pulse width modulation (HPWM) full-bridge inverters, a random switching method for HPWM full-bridge inverters is proposed. The proposed method equalizes switching losses of the four switches, while also providing good output performance 相似文献