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41.
X.W. Lou C. Yuan E. Rhoades Q. Zhang L.A. Archer 《Advanced functional materials》2006,16(13):1679-1684
We report a general template strategy for rational fabrication of a new class of nanostructured materials consisting of multicore shell particles. Our approach is demonstrated by encapsulating Au or Pt nanoparticles in silica shells. Other superstructures of these hollow shells, like dimers, trimers, and tetramers can also be formed by nanoparticle‐mediated self‐assembly. We have also used the as‐prepared multicore Au–silica hollow particles to perform the first studies of Ostwald ripening in confined microspace, in which chloride was found to be an efficient mediating ligand. After treatment with aqua regia, Au–Cl complex is formed inside the shell, and is found to be very active under in situ transmission electron microscopy observations while confined in a microcell. This aspect of the work is expected to motivate further in situ studies of confined crystal growth. 相似文献
42.
Rheological properties of MR fluids under large step strain shear are presented in this paper. The experiments were carried out using a rheometer with parallel-plate geometry. Under the large step strain shear, MR fluids behave as nonlinear viscoelastic properties, where the stress relaxation modulus, G(t, γ), shows a decreasing trend with step strain. The experimental results indicate that G(t, γ) obeys time-strain separability. Thus, a mathematical form based on finite exponential serials is proposed to predict MR behavior. In this model, G(t, γ) is represented as the product of a linear stress relaxation, G(t), and the damping function, h(γ), i.e. G(t, γ)=G(t) h(γ). G(t) is simply represented as a three-parameter exponential serial and h(γ) has a sigmoidal form with two parameters. The parameters are identified by adopting an efficient optimization method proposed by Stango et al. The comparison between the experimental results and the model-predicted values indicates that this mathematical model can accurately predict MR behavior. 相似文献
43.
基于对比折射法的三维静校正技术及其应用 总被引:7,自引:0,他引:7
在地形起伏剧烈、速度和厚度横向变化大的地区,折射静校正技术的应用受到诸多限制,主要表现在不能准确地识别和拾取来自于地下连续地质界面的折射波,使得精确求取的长波长静校正量困难。为此,提出了一种基于对比折射法的三维静校正技术。介绍了这种静校正技术的方法原理和特点,基于对比折射法的折射波至拾取实质上是一个折射层的对比分析解释过程,因此能准确地拾取折射波至,精确地求解低速带的绝对延迟时;然后利用延迟时和近地表速度模型(等效,时深,空变)反演表层模型,最终一次性完成基准面静校正(包含低速带校正和高程校正)。在黄土塬、沙漠以及沙漠和山地的接合部等地区,利用基于对比折射法的三维静校正技术进行静校正处理,使资料的品质得到了明显改善,反射同相轴连续性好,信噪比和分辨率高,构造形态清晰可靠,提高了勘探精度。 相似文献
44.
墨西哥南部地区面临的挑战之一是水管理.油流中的水增加了其处理费用,导致结垢,降低了采油量,最终关井(与修井费用有关).甚至当产层中仍然含有大量可采油气时,也常常将这些层废弃以避免产水.虽然天然裂缝对油流有积极的作用,但它们也促进了由锥进效应或油气产层和其上或下层段之间的高渗透薄夹层引起的水或气的流动.如果这些油层产水,就会很快影响其生产能力.另一个必须解决的问题是:边水通过断层、天然裂缝等流动引起的早期水突破.本文将讨论墨西哥南部使用经有机交联剂活化的低相对分子质量聚合物的实例,介绍候选对象的选择过程、总体作业设计、实验室试验结果等,以及在这一地区进行的降低产水量处理.实例中包括衰竭、高度裂缝性油藏. 相似文献
45.
46.
根据石化企业生产过程的实际情况,考虑原料供应量、装置加工能力、物料平衡和价格等情况.建芷反映企业生产情况的线性规划数学模型。分别阐述了模型的决策变量、目标函数和约束方程的自动生成的方法,并给出了模型文件的存储结构。 相似文献
47.
丙烯腈装置回收塔内聚合物生成原因的分析 总被引:2,自引:0,他引:2
针对丙烯腈生产过程中回收塔内聚合物堵塞降液管造成回收塔运行周期短的问题,通过对丙烯腈回收塔内各组分分布的模拟计算,直观显示了回收塔内各组分的浓度分布,发现了回收塔的聚合段与丙烯醛的富集段相吻合的现象,初步得出了回收塔内局部聚合的原因;通过对塔内聚合物的特性分析和评判,进一步证实了“回收塔内局部聚合严重是由于在聚合段丙烯醛聚集引起”这一现象;根据模拟计算结果和实际运行经验,提出了预防聚合物堵塞降液管的措施,并进行了部分生产验证,为丙烯腈生产企业延长装置运行周期提供了理论指导。 相似文献
48.
B.‐J. Fang Y.‐J. Shan H.‐Q. Xu H.‐S. Luo Z.‐W. Yin 《Advanced functional materials》2004,14(2):169-173
Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg1/3‐Nb2/3)0.69Ti0.31]O3 (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d33, in the range of 1800–2200 pC N–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states. 相似文献
49.
A self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n+-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO2 and 300 nm Si3N4. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi2 layer and a subsequent out-diffusion process to form the n+-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated. 相似文献
50.