约束层材料及靶材表面特征对激光冲击波的影响

观测了不同约束层材料及不同靶材表面特征情况下产生的激光冲击波。实验发现 ,约束层对激光冲击波的脉宽有显著的展宽作用 ,且冲击波的峰压值随约束层材料的声阻抗的增大而增大。另外 ,研究了表面涂层对冲击结果的影响 ,重新认识了其作用。针对于实际应用 ,还试验了曲面靶材的冲击强化 ,讨论了约束结构的有效性问题。     

^（60）Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors

Unpassivated/passivated AlGaN/GaN high electron mobility transistors （HEMTs） were exposed to 1.25 MeV 60Co γ-rays at a dose of 1 Mrad（Si）. The saturation drain current of the unpassivated devices decreased by 15% at 1 Mrad γ-dose, and the maximal transconductance decreased by 9.1% under the same condition; more- over, either forward or reverse gate bias current was significantly increased, while the threshold voltage is relatively unaffected. By sharp contrast, the passivated devices showed scarcely any change in saturation drain current and maximal transconductance at the same γ dose. Based on the differences between the passivated HEMTs and un- passivated HEMTs, adding the C–V measurement results, the obviously parameter degradation of the unpassivated AlGaN/GaN HEMTs is believed to be caused by the creation of electronegative surface state charges in sourcegate spacer and gate–drain spacer at the low dose （1 Mrad）. These results reveal that the passivation is effective in reducing the effects of surface state charges induced by the 60Co γ-rays irradiation, so the passivation is an effective reinforced approach.     

基于802．11a标准的5GHz振荡器设计

介绍了一种全集成的LC压控振荡器（VCO）的设计。该振荡器的中心频率为5．25GHz,电源电压为1．8V,工作在802．11a标准下,采用0．18μmCMOS工艺实现。仿真结果表明。VCO的相位噪声在偏离中心频率1MHz时达到-121dBc／Hz,调谐范围达到31％,输出电压峰峰值为830mV,有良好的线性纯度。     

半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制

综合深能级缺陷和电学性质的测试结果,证明了半绝缘InP单晶材料的电学性能、热稳定性、均匀性等性能与材料中一些深能级缺陷的含量密切相关.通过分析深能级缺陷产生的规律与热处理及生长条件的关系,给出了抑制缺陷产生,提高材料质量的途径.对缺陷的属性与形成机理进行了分析讨论.     

MOCVD生长的GaN薄膜中缺陷团引起的X射线漫散射研究

采用高分辨X射线衍射对在蓝宝石(0001)面生长的GaN外延膜的漫散射进行了研究.结果表明,GaN薄膜中存在缺陷团,其浓度随着穿透位错密度的增加而增加,其平均半径呈相反趋势.基于位错是点缺陷的聚集区,缺陷团优先在位错附近形成的效应对结果进行了解释.同时发现电子迁移率随缺陷团浓度的增加而减少.     

Vapor Phase Growth of Centimeter-Sized Band Gap Engineered Cesium Lead Halide Perovskite Single-Crystal Thin Films with Color-tunable Stimulated Emission

Single crystal metal halide perovskites thin films are considered to be a promising optical, optoelectronic materials with extraordinary performance due to their low defect densities. However, it is still difficult to achieve large-scale perovskite single-crystal thin films (SCTFs) with tunable bandgap by vapor-phase deposition method. Herein, the synthesis of CsPbCl_3(1–x)Br_3x SCTFs with centimeter size (1 cm × 1 cm) via vapor-phase deposition is reported. The Br composition of CsPbCl_3(1–x)Br_3x SCTFs can be gradually tuned from x = 0 to x = 1, leading the corresponding bandgap to change from 2.29 to 2.91 eV. Additionally, an low-threshold (≈23.9 µJ cm⁻²) amplified spontaneous emission is achieved based on CsPbCl_3(1–x)Br_3x SCTFs at room temperature, and the wavelength is tuned from 432 to 547 nm by varying the Cl/Br ratio. Importantly, the high-quality CsPbCl_3(1–x)Br_3x SCTFs are ideal optical gain medium with high gain up to 1369.8 ± 101.2 cm⁻¹. This study not only provides a versatile method to fabricate high quality CsPbCl_3(1–x)Br_3x SCTFs with different Cl/Br ratio, but also paves the way for further research of color-tunable perovskite lasing.     

Review of Broadband Metamaterial Absorbers: From Principles,Design Strategies,and Tunable Properties to Functional Applications

Metamaterial absorbers have been widely studied and continuously concerned owing to their excellent resonance features of ultra-thin thickness, light-weight, and high absorbance. Their applications, however, are typically restricted by the intrinsic dispersion of materials and strong resonant features of patterned arrays (mainly referring to narrow absorption bandwidth). It is, therefore essential to reassert the principles of building broadband metamaterial absorbers (BMAs). Herein, the research progress of BMAs from principles, design strategies, tunable properties to functional applications are comprehensively and deeply summarized. Physical principles behind broadband absorption are briefly discussed, typical design strategies in realizing broadband absorption are further emphasized, such as top-down lithography, bottom-up self-assembly, and emerging 3D printing technology. Diversified active components choices, including optical response, temperature response, electrical response, magnetic response, mechanical response, and multi-parameter responses, are reviewed in achieving dynamically tuned broadband absorption. Following this, the achievements of various interdisciplinary applications for BMAs in energy-harvesting, photodetectors, radar-IR dual stealth, bolometers, noise absorbing, imaging, and fabric wearable are summarized. Finally, the challenges and perspectives for future development of BMAs are discussed.     

光学元件面形误差的光滑延展算法

在离子束抛光工艺中,为了提高驻留时间求解算法在工件边缘处的求解精度,需要对原始面形误差数据进行有界光滑延展。推导并提出了一种基于高斯曲线的曲面延展算法,该算法利用了高斯函数的有界性、光滑性和参数连续性。将该曲面延展算法应用于带有高频噪声的面形误差工件的驻留时间求解过程中,驻留时间算法在光学元件边缘处的残余误差得到了抑制,使得驻留时间算法在整个通光口径内的收敛率达到了97%（RMS）。这表明基于高斯曲线的曲面光滑延展算法能实现光学元件面形误差的光滑延展,并具有良好的抗噪声干扰能力,改善了驻留时间算法的求解精度。     

浮栅技术及其应用

介绍了浮栅技术的基本原理及应用情况。井对2种应用了浮栅技术的典型器件-浮栅MOS晶体管和神MOS晶体管做了详细介绍，分析了他们的基本结构和工作原理，以及建立浮栅MOS晶体管的等效模型，并说明了他们的应用情况及存在的不足。     

基于偏振度椭球的PMD补偿方法的研究

分析了PMD椭球的三个轴随PMD的变化规律,建立了以偏振度椭球的短轴作为PMD补偿的反馈信号的PMD补偿系统模型,并通过数值模拟对一阶和二阶PMD进行了补偿,结果表明采用这种方法能同时有效地补偿一阶及二阶PMD。