5G network is an inevitable trend in the development of mobile communications. Mobile cloud computing is a more promising technology for 5G networks. This paper proposes a hierarchical distributed cloud service network model, which is composed of three layers: “access cloud + distributed micro cloud + core cloud”. On the basis of access to the cloud, a distributed micro cloud system is deployed to migrate the service capabilities of the remote core cloud server to the local area. This paper proposes a task offloading assignment algorithm in a small cell cloud scenario. This algorithm establishes a SCC (Small Cell Cloud) based on the channel quality between small cells and the remaining available computing resources, and allocates the load to each small cell in the SCC according to the channel quality and the remaining available computing resources. Simulation results show that this solution can improve the utilization of wireless and computing resources in the small cell cloud computing scenario, and improve the user QoE (Quality of Experience). In order to make the system operate normally under heavy load, this paper proposes a feedback adaptive random access strategy based on the adaptive random access model. This can ensure that the throughput rate does not decrease under heavy load conditions, and at the same time, the average access delay of the existing system is reduced. When the arrival rate of user requests gradually increases, the throughput rate of RA-RACH access will continue to decrease due to collisions until it approaches below 0.1. In the state where the number of users is low and the load is lighter, both RA-RACH, AC-RACH, and FC-RACH have a higher access success rate. But as the load continues to increase, RA-RACH will quickly drop to 0.
Dielectric materials with high electric energy density and low loss are of great importance for applications in modern electronics and electrical systems. Strongly dipolar materials have the potential to reach relatively higher dielectric constants than the widely used non-polar or weakly dipolar polymers, as well as a much lower loss than that of nonlinear high K polymer dielectrics or polymer–ceramic composites. To realize the high energy density while maintaining the low dielectric loss, aromatic polythioureas and polyureas with high dipole moments, high dipole densities, tunable molecular structures and dielectric properties were investigated. High energy density (>24 J/cm3), high breakdown strength (>800 MV/m), and high charge–discharge efficiency (>90%) can be achieved in the new polymers. The molecular structure and film surface morphology were also studied; it is of great importance to optimize the fabrication process to make high-quality thin films. 相似文献
An injection-locked frequency divider (ILFD) with multiple highly nonlinear injection stages is discussed. Implemented in a standard 0.18-mum CMOS technology, measurement shows that multiple division ratios from 6 to 18 are achieved while the locking ranges are all above 1.7 GHz without the need for additional tuning. The ILFD can be locked at the maximum injection frequency of 11 GHz with the power consumption no more than 7.2 mW from a 1.8-V power supply 相似文献
A double-loop directional filter is described and realized in this work by using a novel guided-wave structure called half mode substrate integrated waveguide (HMSIW), which retains the attractive performances of substrate integrated waveguide (SIW) with a nearly half reduction in size compared to the original SIW version. The demonstrated filter is designed at 12 GHz with less than 3.2 dB insertion loss for a 250-MHz bandwidth, and the minimum insertion loss is 1.5 dB. It presents low insertion loss, high power capacity in planar compact configuration with a standard PCB fabrication process. 相似文献
Highly ordered mesoporous silicon carbide ceramics have been successfully synthesized with yields higher than 75 % via a one‐step nanocasting process using commercial polycarbosilane (PCS) as a precursor and mesoporous silica as hard templates. Mesoporous SiC nanowires in two‐dimensional (2D) hexagonal arrays (p6m) can be easily replicated from a mesoporous silica SBA‐15 template. Small‐angle X‐ray diffraction (XRD) patterns and transmission electron microscopy (TEM) images show that the SiC nanowires have long‐range regularity over large areas because of the interwire pillar connections. A three‐dimensional (3D) bicontinuous cubic mesoporous SiC structure (Ia3d) can be fabricated using mesoporous silica KIT‐6 as the mother template. The structure shows higher thermal stability than the 2D hexagonal mesoporous SiC, mostly because of the 3D network connections. The major constituent of the products is SiC, with 12 % excess carbon and 14 % oxygen measured by elemental analysis. The obtained mesoporous SiC ceramics are amorphous below 1200 °C and are mainly composed of randomly oriented β‐SiC crystallites after treatment at 1400 °C. N2‐sorption isotherms reveal that these ordered mesoporous SiC ceramics have high Brunauer–Emmett–Teller (BET) specific surface areas (up to 720 m2 g–1), large pore volumes (~ 0.8 cm3 g–1), and narrow pore‐size distributions (mean values of 2.0–3.7 nm), even upon calcination at temperatures as high as 1400 °C. The rough surface and high order of the nanowire arrays result from the strong interconnections of the SiC products and are the main reasons for such high surface areas. XRD, N2‐sorption, and TEM measurements show that the mesoporous SiC ceramics have ultrahigh stability even after re‐treatment at 1400 °C under a N2 atmosphere. Compared with 2D hexagonal SiC nanowire arrays, 3D cubic mesoporous SiC shows superior thermal stability, as well as higher surface areas (590 m2 g–1) and larger pore volumes (~ 0.71 cm3 g–1). 相似文献
This paper presents an optimized embedded EEPROM design approach which has reduced the power significantly in a short-range passive RFID tag. The proposed array control circuit employs an improved structure to minimize the leakage of memory bit cells. With the proposed array circuit design, the passive RFID tag can operate drawing a low quiescent current. The RFID tag with the proposed EEPROM was fabricated in a standard 0.35-μm four-metal two-poly CMOS process. Measurement results show that the erasing/writing current is 45 μA, and reading current consumption is 3 μA with a supply voltage of 3.3 V. The data read time is 300 ns/bit. 相似文献
We optimized the lattice structure of sulfur-doped CuInSe2 using first principles. The lattice constants for CuIn(SxSe1–x)2 vary linearly with x according to a(x)=–0.02828x+0.58786 nm and c(x)=–0.05692x+1.1834 nm, which agree well with experimental data. The optical properties of CuIn(SxSe1–x)2 were then systematically investigated using first-principles calculations with the HSE06 functional. We present data for the complex dielectric function, refractive index, extinction coefficient, reflectivity index, absorption coefficient, and optical bandgap for CuIn(SxSe1–x)2. The optical bandgap Eg obtained from the absorption coefficient is 1.07 eV for CuInSe2 and 1.384 eV for CuInS2. These values are very close to experimental results, indicating that first-principles calculations can yield accurate bandgap values. The optical bandgap of CuIn(SxSe1–x)2 increases linearly with the sulfur concentration according to Eg=0.3139x+1.0825 eV. 相似文献