晶体硅中的铁沉淀规律

研究了在直拉单晶硅和铸造多晶硅中经110 0℃热处理快冷或慢冷条件下所形成的铁沉淀规律及其对少数载流子扩散长度的影响.红外扫描仪照片显示在直拉单晶硅中慢冷却形成的铁沉淀密度较低,而且其尺寸较大;在铸造多晶硅中,铁易在晶界上沉淀,沉淀规律也依赖于冷却速度.表面光电压仪测试结果表明:无论在直拉单晶硅材料中还是在铸造多晶硅材料中,快冷形成的铁沉淀对少数载流子扩散长度影响更大.实验结果可以用铁沉淀生成的热力学和动力学规律解释     

用于综合PWM芯片的并行遗传算法

提出了基于遗传算法的脉冲宽度调制(PWM)芯片的自动综合方法.为保证综合结果准确实用,对电路性能的评价基于HSPICE的仿真结果,提出的并行遗传算法采用了电路划分和参数关联技术,并运用互联网实现并行计算.综合实例表明了该方法的有效性     

用CMOS工艺改善集成开关电容DC-DC变换器的特性

介绍了一种具有改进电路结构和改进工艺的单片集成3.3V/ 1.2 V开关电容DC- DC变换器,其控制脉冲频率和固定导通比分别为10 MHz和0 .5 .为了提高变换器的输出电流,采用CMOS工艺来制造电路中的开关器件和改进的互补型电路结构.使用Hspice电路仿真软件得到的仿真结果表明改进变换器的单个单元电路和互补型电路可使输出电流分别达到12 .5 m A和2 6 m A,且后者的功率转换效率为73% ,输出电压纹波小于1.5 % .变换器在日本东京大学的标准Rohm 0 .35 μm CMOS工艺线上投片试制,测试结果显示,使用CMOS开关的变换器单元电路的输出电流为9.8m A.     

Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxy

We report detailed studies of the optical properties of CdSe quantum dots (QDs) grown on ZnSe and ZnBeSe by molecular-beam epitaxy (MBE). We performed steady-state and time-resolved photoluminescence (PL) measurements and observe that nonradiative processes dominate at room temperature (RT) in the CdSe/ZnBeSe QDs structures, though these nonradiative processes do not dominate in the CdSe/ZnSe QDs structures up to RT. We performed secondary ion-mass spectrometry (SIMS) measurement and propose that the oxygen incorporation in the ZnBeSe layers (possibly caused by the reactivity of Be) may contribute to the dominant nonradiative processes at high temperatures in the QDs grown on ZnBeSe.     

An Algorithm to Detect the Presence of 3D Target Motion from ISAR Data

We present an algorithm to detect the presence of 3D target motion from ISAR data. Based on the 3D point scatterer model, we first examine the effect of 3D motion on ISAR imaging. It is shown that existing motion compensation algorithms cannot properly focus targets exhibiting 3D motion during the imaging interval. An algorithm is then derived to blindly detect the degree of 3D target motion from raw radar data. It is based on measuring the linearity of phases between two or more point scatterers on the target. The phase estimation is implemented using the adaptive joint time-frequency technique. Examples are provided to demonstrate the effectiveness of the 3D motion detection algorithm with both simulation and real ISAR data. The detection results are corroborated with the truth motion data from on-board motion sensors and correlated with the resulting ISAR images.     

iMobile EE – An Enterprise Mobile Service Platform

iMobile is an enterprise mobile service platform that allows resource-limited mobile devices to communicate with each other and to securely access corporate contents and services. The original iMobile architecture consists of devlets that provide protocol interfaces to different mobile devices and infolets that access and transcode information based on device profiles. iMobile Enterprise Edition (iMobile EE) is a redesign of the original iMobile architecture to address the security, scalability, and availability requirements of a large enterprise such as AT&T. iMobile EE incorporates gateways that interact with corporate authentication services, replicated iMobile servers with backend connections to corporate services, a reliable message queue that connects iMobile gateways and servers, and a comprehensive service profile database that governs operations of the mobile service platform. The iMobile EE architecture was also extended to provide personalized multimedia services, allowing mobile users to remotely control, record, and request video contents. iMobile EE aims to provide a scalable, secure, and modular software platform that makes enterprise services easily accessible to a growing list of mobile devices roaming among various wireless networks.     

Feasibility analysis of phonon lasers

We identify the main reason impeding coherent generation of phonons in solid state - the inherently high density of phonon states. Based on the results of our analysis we formulate a set of conditions that may make phonon lasing practical and point out the most promising mechanism of phonon lasing: LO/spl rarr/LA+TO in InP. We then develop a complete set of phonon laser equations and evaluate the threshold, output power and efficiency of phonon lasers based on InP MESFET. We show that one can obtain high-power 1.26-THz coherent phonon emission with pump power as small as a few milliwatts and up to 5% slope efficiency. Potential applications are also discussed.     

Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH/sub 3/ nitridation, were investigated. The results show that with NH/sub 3/ nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO/sub 2/ (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH/sub 3/ nitridation.     

Impedance boundary conditions in a hybrid FEM/MOM formulation

When numerically modeling structures with imperfect conductors or conductors coated with a dielectric material, impedance boundary conditions (IBCs) can substantially reduce the amount of computation required. This paper incorporates the IBC in the finite-element method (FEM) part of a FEM/method of moments (FEM/MoM) modeling code. Properties of the new formulation are investigated and the formulation is used to model three practical electromagnetic problems. Results are compared to either measured data or other numerical results. The effect of the IBC on the condition number of hybrid FEM/MoM matrices is also discussed.