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121.
Vertical integration of 2D layered materials to form van der Waals heterostructures (vdWHs) offers new functional electronic and optoelectronic devices. However, the mobility in vertical carrier transport in vdWHs of vertical field‐effect transistor (VFET) is not yet investigated in spite of the importance of mobility for the successful application of VFETs in integrated circuits. Here, the mobility in VFET of vdWHs under different drain biases, gate biases, and metal work functions is first investigated and engineered. The traps in WSe2 are the main source of scattering, which influences the vertical mobility and three distinct transport mechanisms: Ohmic transport, trap‐limited transport, and space‐charge‐limited transport. The vertical mobility in VFET can be improved by suppressing the trap states by raising the Fermi level of WSe2. This is achieved by increasing the injected carrier density by applying a high drain voltage, or decreasing the Schottky barrier at the graphene/WSe2 and metal/WSe2 junctions by applying a gate bias and reducing the metal work function, respectively. Consequently, the mobility in Mn vdWH at +50 V gate voltage is about 76 times higher than the initial mobility of Au vdWH. This work enables further improvements in the VFET for successful application in integrated circuits.  相似文献   
122.
Improved performance in plasmonic organic solar cells (OSCs) and organic light‐emitting diodes (OLEDs) via strong plasmon‐coupling effects generated by aligned silver nanowire (AgNW) transparent electrodes decorated with core–shell silver–silica nanoparticles (Ag@SiO2NPs) is demonstrated. NP‐enhanced plasmonic AgNW (Ag@SiO2NP–AgNW) electrodes enable substantially enhanced radiative emission and light absorption efficiency due to strong hybridized plasmon coupling between localized surface plasmons (LSPs) and propagating surface plasmon polaritons (SPPs) modes, which leads to improved device performance in organic optoelectronic devices (OODs). The discrete dipole approximation (DDA) calculation of the electric field verifies a strongly enhanced plasmon‐coupling effect caused by decorating core–shell Ag@SiO2NPs onto the AgNWs. Notably, an electroluminescence efficiency of 25.33 cd A?1 (at 3.2 V) and a power efficiency of 25.14 lm W?1 (3.0 V) in OLEDs, as well as a power conversion efficiency (PCE) value of 9.19% in OSCs are achieved using hybrid Ag@SiO2NP–AgNW films. These are the highest values reported to date for optoelectronic devices based on AgNW electrodes. This work provides a new design platform to fabricate high‐performance OODs, which can be further explored in various plasmonic and optoelectronic devices.  相似文献   
123.
Herein, a novel combination of Mg- and Ga-co-doped ZnO (MGZO)/Li-doped graphene oxide (LGO) transparent electrode (TE)/electron-transporting layer (ETL) has been applied for the first time in Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs). MGZO has a wide optical spectrum with high transmittance compared to that with conventional Al-doped ZnO (AZO), enabling additional photon harvesting, and has a low electrical resistance that increases electron collection rate. These excellent optoelectronic properties significantly improved the short-circuit current density and fill factor of the TFSCs. Additionally, the solution-processable alternative LGO ETL prevented plasma-induced damage to chemical bath deposited cadmium sulfide (CdS) buffer, thereby enabling the maintenance of high-quality junctions using a thin CdS buffer layer (≈30 nm). Interfacial engineering with LGO improved the Voc of the CZTSSe TFSCs from 466 to 502 mV. Furthermore, the tunable work function obtained through Li doping generated a more favorable band offset in CdS/LGO/MGZO interfaces, thereby, improving the electron collection. The MGZO/LGO TE/ETL combination achieved a power conversion efficiency of 10.67%, which is considerably higher than that of conventional AZO/intrinsic ZnO (8.33%).  相似文献   
124.
The growing concern over the depletion of hydrocarbon resources, and the adverse environmental effects associated with their use, has increased the demand for renewable energy sources. Thermoelectric (TE) power generation from waste heat has emerged as a renewable energy source that does not generate any pollutants. Recently, ink‐based processing for the preparation of TE materials has attracted tremendous attention because of the simplicity in design of power generators and the possibility of cost‐effective manufacturing. In this progress report, recent advances in the development of TE inks, processing techniques, and ink‐fabricated devices are reviewed. A summary of typical formulations of TE materials as inks is included, as well as a discussion on various ink‐based fabrication methods, with several examples of newly designed devices fabricated using these techniques. Finally, the prospects of this field with respect to the industrialization of TE power generation technology are presented.  相似文献   
125.
Structural development of tellurite glasses with the addition of Li2O and Na2O has been studied using infrared, Raman, and X-ray photoelectron spectroscopies. The increase in intensity of the peak at 755 cm−1 in the infrared spectra as compared to the peak at 620 cm −1 suggests the transformation of TeO4 building units to TeO3 pyramids with the addition of alkali oxide. Proposed structural change is further supported by the strong compositional dependence of the 755-cm−1 peak in the Raman spectra as well as by the formation of a shoulder in the O 1 s peak of X-ray photoelectron spectra. In contrast to alkali silicate glasses, formation of nonbridging oxygens with the addition of alkali oxide is not observed.  相似文献   
126.
This study reports a new nonfullerene electron transporting material (ETM) based on naphthalene diimide (NDI) small molecules for use in high‐performance perovskite solar cells (PSCs). These solar cells simultaneously achieve high power conversion efficiency (PCE) of over 20% and long‐term stability. New NDI‐ID (N,N′‐Bis(1‐indanyl)naphthalene‐1,4,5,8‐tetracarboxylic diimide) consisting of an N‐substituted indane group having simultaneous alicyclic and aromatic characteristics is synthesized by a low‐cost, one‐step reaction, and facile purification method. The partially flexible characteristics of an alicyclic cyclopentene group on indane groups open the possibility of low‐temperature solution processing. The conformational rigidity and aromaticity of phenyl and alicyclic groups contribute to high temporal stability by strong secondary bonds. NDI‐ID has herringbone packed semiconducting NDI cores that exhibit up to 0.2 cm2 V?1 s?1 electron mobility in field effect transistors. The inverted PSCs based on CH(NH2)2PbI3–xBrx with NDI‐ID ETM exhibit very high PCEs of up to 20.2%, which is better than that of widely used PCBM (phenyl‐C61‐butyric acid methyl ester) ETM‐based PSCs. Moreover, NDI‐ID‐based PSCs exhibit very high long‐term temporal stability, retaining 90% of the initial PCE after 500 h at 100 °C with 1 sun illumination without encapsulation. Therefore, NDI‐ID is a promising ETM for highly efficient, stable PSCs.  相似文献   
127.
The influence of Nd2O3 addition on the precipitation kinetics of lead chalcogenide (PbS) quantum dots (QDs) in silicate glasses was investigated. Energy dispersive X‐ray spectroscopy (EDS) indicated that the Nd3+ ions are preferentially located inside the PbS QDs rather than in the glass matrix. Changes in diameter (D) of PbS QDs exhibited smaller time dependencies (i.e., Dt0.270‐0.286) than that predicted by the classical Lifshitz–Slyozov–Wagner (LSW) theory. This is due to the limited concentrations of Pb2+ and S2? ions and the large diffusion distance inside the glass matrix. In addition, extended X‐ray absorption fine structure (EXAFS) results indicated that the formation of PbS QDs was retarded due to the presence of Nd2O3 in the glasses, as the large NdOx polyhedra interrupt the diffusion of Pb2+ and S2? ions. We believe that these Nd3+ ions are primarily located in PbS QDs in the form of Nd–O clusters, and that the PbS QDs are built on top of these clusters.  相似文献   
128.
Seo DC  Cho JS  Lee HJ  Heo JS 《Water research》2005,39(11):2445-2447
The filter medium could be selected and the longevity of the filter medium by the phosphorus saturation could be predicted in the constructed wetland system, accordingly proposing the scheme to remove the phosphorus for a long period. The phosphorus adsorption capacities of various filter media were investigated in relation to the size and types of filter media to screen the optimal condition. The objective of this study was to evaluate the constructed wetland longevity by improving P adsorption capacity. The maximum P adsorption capacities of filter media A (4--10 mm), B (2--4 mm), and C (0.1--2 mm) were 7.7, 11.6, and 22.5 mg/kg, respectively, showing that they increased as the filter media size decreased. Among the experimental media, the optimal filter media size was 0.1--2 mm. When Ca, Mg, Al and Fe were added to the filter medium C, which is the optimal filter medium, the addition of Ca improved mostly the P adsorption capacity. In the alternative proposal to use these facts, the oyster shell was added to the filter medium and the P adsorption capacity was examined: adding 2% oyster shell increased the P adsorption capacity from 23 to 36 mg/kg. In the column where the oyster shell was mixed, when the oyster shell content was 5%, 10%, 20%, 40%, 60%, 80%, and 100% in the filter medium C, the respective saturation times of the P adsorption were about 6, 9, 17, 30, 43, 56, and 70 days. When the oyster shell content was 0%, 5%, 10%, 20%, 40%, 60%, 80%, and 100% after 1 month in the column, the P adsorption amount was about 180, 600, 1560, 4280, 6157, 7089, 7519, and 7925 mg/kg, respectively. The increment of the P adsorption amount was small if the oyster shell content was 60% or more, because the filter medium with more than 60% oyster shell content did not approach the saturation time by the P adsorption yet. The P adsorption amount for 60%, 80%, and 100% could be predicted as about 9702, 12,879, and 16,056 mg/kg, respectively. The largest amount of extracted P in the filter media with oyster shell after 30 days of P solution application was bound to Ca, followed by water soluble-P, Al--P, and Fe--P. Therefore, it was concluded that the adsorption amount of the phosphorus could be increased by adding the oyster shell to the filter medium. Also, it was concluded that adding the oyster shell to the filter medium in the constructed wetland was the scheme to extend the longevity of the constructed wetland by the phosphorus saturation, and using the oyster shell would be useful in aspect of economical efficiency and easiness. Especially, it would be the alternative proposal to reduce the environmental pollution in aspect of recycling wastes.  相似文献   
129.
The effect of thermostat configurations on the mechanical behavior of empty and butane (n-C4H10) filled (10, 10) carbon nanotubes (CNTs) is examined using classical, atomistic, molecular dynamics (MD) simulations. In particular, the influence of different types of thermostats, relative numbers of thermostat atoms, and rates of deformation are considered. The compressive forces on the atoms are calculated using the second generation reactive empirical bond-order potential. The results indicate that use of a Langevin thermostat leads to a substantial dependency of the results of CNT compression on the number of thermostat atoms and the rate of deformation. On the other hand, the Nosé-Hoover and the velocity rescaling thermostats exhibit consistent mechanical responses during CNT compression regardless of the relative number of thermostat atoms. However, the Nosé-Hoover thermostat fails to maintain the system temperature at a constant value during the compression process. Thus, this study indicates that the Langevin and velocity rescaling thermostats are more appropriate for use in classical MD simulations of CNT systems than the Nosé-Hoover thermostat, and reveals the conditions under which these thermostats should be used for optimal consistency.  相似文献   
130.
We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA) time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.  相似文献   
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