Electronic properties of magnetically doped nanotubes

Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr).     

一种计算机实时控制系统的分析及其DCS实现

简述了计算机实时控制及分布式控制系统(DCS)的一般特点．并以某型水下机器人的控制系统为例，详细介绍了一种小型实时DCS系统的具体实现。     

水力脉动冲击钻井工具初步研究与试验

掘力脉动冲击钻井是将水力脉冲、机械冲击振动结合为一体提高钻井速度的一种方法，介绍了辽河油田研制的脉动冲击钻井工具的结构、工作原理及现场试验情况。在潜山混合花岗岩、砂岩，硬脆性泥岩等不同地层的现场试验表明：水力脉动工具工作平稳，未出现蹩跳钻现象，也没有出现脱、落、断、掉等问题，主体安全性、可靠性较好；在潜山混舍花岗岩、砂岩、硬脆性泥岩地层机械钻速提高幅度较大，但在部分泥岩地层效果不佳。试验中发现密封圈耐温性差、脉冲腔易磨损等问题，并据此提出了水力脉动冲击工具的下一步研究方向。     

厚膜永磁阵列微致动器的磁路研究

研究了厚膜永磁阵列微致动器中的磁场分布，并研究了永磁阵列单元几何尺寸对微致动器电磁力的影响。结果表明，厚膜永磁阵列单元高宽比和磁体单元间隔对微致动器电磁力影响较大磁徕单元高宽比为0．7是一个比较合适的尺寸。     

CRL与OCSP相结合的证书撤销方案

提出了一个基于CRL和OCSP策略的新的证书撤销方案。首先分析比较了CRL和OCSP协议的优缺点,然后结合两者的优点通过建立一个请求处理服务器提出了一个新的证书撤销方案,最后对改进方案的优劣做了分析总结。     

高压对气井套管接头螺纹接触应力的影响研究

高温高压气井对螺纹密封性的要求要比油井更为严格。对于高压气井中的整个管柱,每一段处于不同的力学环境中,发生泄漏的可能性也不同,因此研究压力对气井套管接头螺纹接触应力的影响,对高压气井套管的合理使用尤为重要。利用弹塑性有限元分析方法,建立了API偏梯型螺纹套管接头的有限元模型,分析了气井压力对套管接头接触应力的影响,提供了研究压力对套管接头螺纹接触应力影响的方法。对于井口压力或井底压力超过34MPa的高压气井,应选用气密性良好的特殊螺纹接头,建议采用金属对金属的螺纹接头套管,以加强螺纹部位的连接强度和密封性能。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

30.4 nm光电成像系统分辨率的初步实验研究

本文基于微通道板MCP(Microchannel Plate)探测器件设计一套成像系统，用于对波长为30．4nm的极紫外EUV(Extreme Ultraviolet)光进行成像．结果获得了一宽度为3mm的狭缝的像，实验测得490μm的成像系统的空间分辨率，并分析了影响系统分辨率的各种因素及为提高系统分辨率所应采取的措施．     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.