Emerging evidence seems to indicate that most systems development organizations are attempting to utilize both agile and traditional approaches. This study aims to understand the reasons organizations feel the need for this unlikely juxtaposition and the organizational challenges in sustaining the opposing cultures. Drawing on the extensive literature in organizational theory and management, we advocate ambidexterity as a viable solution to systems development organizations attempting to harness the benefits of both agile and traditional development. 相似文献
Different lengths of WR3 (220–330 GHz) and WR10 (75–110 GHz) waveguides are fabricated through direct metal laser sintering (DMLS). The losses in these waveguides are measured and modelled using the Huray surface roughness model. The losses in WR3 are around 0.3 dB/mm and in WR10 0.05 dB/mm. The Huray equation model is accounting relatively good for the attenuation in the WR10 waveguide but deviates more in the WR3 waveguide. The model is compared to finite element simulations of the losses assuming an approximate surface structure similar to the resulting one from the DMLS process. 相似文献
The electrical effects of dislocations has been studied by modeling zero-bias resistance-area product (R0A) of long wavelength infrared diodes fabricated in molecular beam epitaxy (MBE)-grown HgCdTe-Si epitaxial films. Results
show that dislocations influence both 40 K and 78 K R0A products in high dislocation density (HgCdTe/Si) material. In low dislocation density samples (HgCdTe/CdZnTe), the variations
in 78 K R0A are limited by the composition (x) variations in Hg1-xCdxTe material, whereas dislocation contribution dominates the variations at 40 K. The origin of relatively large spread in 40
K R0A in both types of samples is traced to the statistical variations in the core charges of dislocations. It is concluded that
additional alternatives besides the reduction of dislocation density (such as control of core charges), may also need attention
in order to make Si a viable substrate material for the growth of HgCdTe epitaxial layers suitable for devices operating at
40 K. 相似文献
While at low (4°C) temperatures, addition of ammonia to aqueous metal nitrate solutions induces the precipitation of α-nickel hydroxide and at high (25–65°C) temperatures, β-Ni(OH)2 is formed. The crystallinity of the product improves at higher temperatures of precipitation and the product obtained at 65°C is devoid of various disorders such as stacking faults, turbostraticity and interstratification. This provides a simple and efficient alternative to the hydrothermal synthesis of crystalline β-Ni(OH)2. The temperature induced control over phase selection provides direct experimental evidence for the metastability of α-nickel hydroxide. Crystalline β-Ni(OH)2 is, however, a poor electrode material for alkaline secondary cells and exhibits a capacity of only 75 ± 10 mAh/g, against the theoretically expected 289 mAh/g. 相似文献
Potassium succinate–succinic acid (KSSA), semi-organic single crystals were grown by slow evaporation growth technique using water solvent. Single crystal X-ray diffraction study revealed that the KSSA crystal belongs to monoclinic system. FT-IR and FT-Raman spectral studies were performed to identify the vibrations of functional groups. TGA/DTA analyses were carried out to characterize the melting behavior and stability of the title compound. The UV–Vis–NIR spectrum showed that the grown crystal is transparent in the entire visible region. Fluorescence studies were carried out in the range of 200–700 nm. The optical nonlinearity of KSSA was investigated at 532 nm using 7 ns laser pulses, employing the open aperture Z-scan technique. The photoconductivity study was carried out to know the conducting nature of the crystal. The laser damage threshold was measured using Q-switched Nd:YAG laser (1064 nm). Electrical properties of the crystal are studied using Hall Effect measurement. 相似文献
The growth of CIGS thin films on soda-lime glass substrates at different substrate temperatures by dual ion beam sputtering system in a single-step route from a single quaternary sputtering target with the composition of Cu (In0.70 Ga0.30) Se2 was reported. The effects of the substrate temperature on structural, optical, morphological and electrical properties of CIGS films were investigated. Stoichiometry of one such film was investigated by X-ray photoelectron spectroscopy. All CIGS films had demonstrated a strong (112) orientation located at 2θ ~26.70o, which indicated the chalcopyrite structure of films. The value of full-width at half-maximum of (112) peak was reduced from 0.58° to 0.19° and crystallite size was enlarged from 14.98 to 43.05 nm as growth temperature was increased from 100 to 400 °C. However, atomic force microscope results showed a smooth and uniform surface at lower growth temperature and the surface roughness was observed to increase with increasing growth temperature. Hall measurements exhibited the minimum film resistivity of 0.09 Ω cm with a hole concentration of 2.42 × 1018 cm?3 and mobility of 28.60 cm2 V?1 s?1 for CIGS film grown at 100 °C. Film absorption coefficient was found to enhance nominally from 1 × 105 to 2.3 × 105 cm?1 with increasing growth temperature from 100 to 400 °C. 相似文献
Mass spectrometric analysis of gases evolved during thermal decomposition of divalent metal hydroxides, hydroxysalts and hydrotalcites
show that all these compounds undergo dehydration in the temperature range 30 <T < 220°C followed by decomposition at temperatures above 250°C. The latter step involves simultaneous deanation and dehydroxylation
of the layers. Our observations conclusively prove that alternative mechanisms which envisage CO2 evolution due to deanation at lower temperatures proposed by Kanezaki to be wrong. 相似文献
Multimedia Tools and Applications - The interest in real-time micro-expression recognition has increased with the current trend in human-computer interaction applications. Presently, there are... 相似文献
This paper first presents a novel approach for modelling facial features, Local Directional Texture (LDT), which exploits the unique directional information in image textures for the problem of face recognition. A variant of LDT with privacy-preserving temporal strips (TS) is then considered to achieve faceless recognition with a higher degree of privacy while maintaining high accuracy. The TS uses two strips of pixel blocks from the temporal planes, XT and YT, for face recognition. By removing the reliance on spatial context (i.e., XY plane) for this task, the proposed method withholds facial appearance information from public view, where only one-dimensional temporal information that varies across time are extracted for recognition. Thus, privacy is assured, yet without impeding the facial recognition task which is vital for many security applications such as street surveillance and perimeter access control. To validate the reliability of the proposed method, experiments were carried out using the Honda/UCSD, CK+, CAS(ME)2 and CASME II databases. The proposed method achieved a recognition rate of 98.26% in the standard video-based face recognition database, Honda/UCSD. It also offers a 81.92% reduction in the dimension length required for storing the extracted features, in contrast to the conventional LBP-TOP.