不同直径张应变锗材料对光谱和晶体质量的影响

绝缘体上张应变锗材料是通过能带工程提高锗材料光电性能得到的一种新型半导体材料,在微电子和光电子领域具有重要的应用前景.采用微电子技术中的图形加工方法以及利用锗浓缩的技术原理,在绝缘体上硅(SOI)材料上制备了绝缘体上张应变锗材料.喇曼与室温光致发光(PL)测试结果表明,不同圆形半径的绝缘体上锗材料张应变均为0.54％.对于绝缘体上张应变锗材料,应变使其发光红移的效果强于量子阱使其发生蓝移的效果,总体将使绝缘体上张应变锗材料的直接带发光峰位红移.同时0.54％张应变锗材料的直接带发光强度随着圆形半径的增大而减弱,这主要是因为圆形半径大的样品其晶体质量较差.该材料可进一步用于制备锗微电子和光电子器件.     

An error-based micro-sensor capture system for real-time motion estimation

A wearable micro-sensor motion capture system with 16 IMUs and an error-compensatory complementary filter algorithm for real-time motion estimation has been developed to acquire accurate 3D orientation and displacement in real life activities. In the proposed filter algorithm, the gyroscope bias error, orientation error and magnetic disturbance error are estimated and compensated, significantly reducing the orientation estimation error due to sensor noise and drift. Displacement estimation, especially for activities such as jumping, has been the challenge in micro-sensor motion capture. An adaptive gait phase detection algorithm has been developed to accommodate accurate displacement estimation in different types of activities. The performance of this system is benchmarked with respect to the results of VICON optical capture system. The experimental results have demonstrated effectiveness of the system in daily activities tracking, with estimation error 0.16 ±0.06 m for normal walking and 0.13 ±0.11 m for jumping motions.     

24-二硝基茴香醚基含铝熔铸炸药爆轰临界直径的实验研究

为了揭示2,4-二硝基茴香醚(DNAN)基高能钝感熔铸炸药的爆轰传播特性,加快DNAN基熔铸炸药的工程化应用,采用连续导线法测量了DNAN基含铝熔铸炸药的临界直径。结果表明：Al含量（质量百分比0~30%）增大、Al粒度d₅₀（分别为6 μm、12 μm、31 μm）减小均会降低爆轰传播的临界直径;黑索今（RDX）的粒度d₅₀（分别为19 μm、147 μm、751 μm）增大、RDX品质提高会增大爆轰传播的临界直径。研究结果为DNAN基含铝熔铸炸药的配方和战斗部结构设计提供基础的技术参数。     

电动力绳系离轨技术性能与任务适应性分析

电动力绳系离轨技术属于被动离轨方式,适用于火箭末级、失效卫星等废弃飞行器快速离轨。针对这项新颖的离轨技术,通过建立多场耦合摄动下的离轨动力学模型,研究并分析了该技术的离轨性能和适用的离轨任务类型,用于指导工程实践及控制方案设计。首先建立多场耦合摄动下的电动力绳系离轨动力学模型,基于数值仿真,验证该项技术的有效性及优越性,并重点研究了不同影响因素下的离轨性能,据此提出了系统参数的设置原则。再通过设置合理的系统参数,分析电动力绳系离轨技术的可适用任务类型。分析结果表明,电动力绳系离轨技术适用于非极轨道的废弃飞行器离轨任务。     

基于扰动搜索属性约简的装备故障诊断研究

为提高装备故障诊断效率,提出了一种新的粗糙集属性约简方法.首先将属性约简问题转化为集合覆盖问题,在相关矩阵的基础上构建相关系数矩阵;然后基于优质特征集选取原则,引入随机变异机制,设计扰动搜索算法,求出属性约简结果;最后,用UCI数据集和某型复杂装备电源系统进行验证.仿真结果表明,在满足分类精度要求的基础上,有效剔除了冗余属性,缩短了故障诊断时间.     

Distinctive Performance of Terahertz Photodetection Driven by Charge‐Density‐Wave Order in CVD‐Grown Tantalum Diselenide

The quantum behavior of carriers in solid is the foundation of modern electronic and optoelectronic technology, but it is still facing huge challenges within inherited single‐particle quantum processes working at the millimeter wave/terahertz (THz) band. Here, a straightforward strategy for the direct detection of millimeter wave/THz photons in a sub‐wavelength metal‐TaSe₂‐metal structure under strong interaction with a localized field of surface plasmon is proposed. By breaking the inversion symmetry under the perturbations of electric field and atomic reconstruction from van der Waals integration, the nonequilibrium electronic states under a radiant field can be manipulated in a collective fashion, leading to a large photocurrent responsivity over 40 A W^?1 and noise equivalent power less than 1 pW Hz^?1/2 even at room temperature. A more than 40‐fold enhancement in responsivity is achieved when transitioning from the normal phase to the CDW phase. The findings shed fresh light on the understanding of the delicate balance in the charge‐ordered phase, and facilitate the exploitation of a correlated electron system for optoelectronic applications in fields of security, remote sensing, and imaging.     

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Due to its significant applications in many relevant fields, light detection in the solar‐blind deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high‐quality ultrawide‐bandgap (UWBG) semiconductors have enabled the realization of various high‐performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar‐blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga₂O₃, Mg_xZn_1?xO, III‐nitride compounds (Al_xGa_1?xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.     

Molybdenum Dioxide Nanoparticles Anchored on Nitrogen-Doped Carbon Nanotubes as Oxidative Desulfurization Catalysts: Role of Electron Transfer in Activity and Reusability

Electron transfer between metal-oxides and supports considerably affects the oxidative desulfurization (ODS) performance of catalysts, while this is far from being well understood. Herein, molybdenum dioxide with oxygen vacancies (V_O-MoO₂) catalysts derived from Mo-based metal-organic frameworks are anchored on electron-rich nitrogen-doped carbon nanotubes (NC) to obtain excellent ODS activity and reusability. Results show that either dibenzothiophene (DBT) or 4,6-dimethyldibenzothiophene (4,6-DMDBT) is removed 100% on the composite catalyst (V_O-MoO₂@NC) within 40 min of reaction when cumene hydroperoxide is chosen as an oxidant. After five cycles of reaction, DBT and 4,6-DMDBT removal still exceeded 99.5 and 95.0%, respectively. Results from density functional theory calculations and characterizations confirm that the strong electron-donating effect of NC on V_O-MoO₂ can promote the dispersion of V_O-MoO₂ and reduce the bond energy of the Mo O bond, leading to exposure of active sites and enrichment of oxygen vacancies (V_O). Furthermore, the strong interfacial electrostatic interaction caused by the electron transfer from NC to V_O-MoO₂ can reduce the leaching of active sites of the catalyst. This study provides a versatile strategy of constructing strong electronic interaction between metal-oxide and support via anchoring on NC for the design of high-performance ODS catalysts.     

Nanogel Encapsulated Hydrogels As Advanced Wound Dressings for the Controlled Delivery of Antibiotics

Biocompatible and degradable dual-delivery gel systems based on hyperbranched dendritic−linear−dendritic copolymers (HBDLDs) is herein conceptualized and accomplished via thiol-ene click chemistry. The elasticity of the hydrogels is tunable by varying the lengths of PEG (2, 6, 10 kDa) or the dry weight percentages (20, 30, 40 wt%), and are found to range from 2–14.7 kPa, comparable to human skin. The co-delivery of antibiotics is achieved, where the hydrophilic drug novobiocin sodium salt (NB) is entrapped within the hydrophilic hydrogel, while the hydrophobic antibiotic ciprofloxacin (CIP) is encapsulated within the dendritic nanogels (DNGs) with hydrophobic cores (DNGs-CIP). The DNGs-CIP with drug loading capacity of 2.83 wt% are then physically entrapped within the hybrid hydrogels through UV curing. The hybrid hydrogels enable the quick release of NB and prolonged released of CIP. In vitro cell infection assays showed that the antibiotic-loaded hybrid hydrogels are able to treat bacterial infections with significant bacterial reduction. Hybrid hydrogel band aids are fabricated and exhibited better antibacterial activity compared with commercial antimicrobial band aids. Remarkably, most hydrogels and hybrid hydrogels show enhanced human dermal cell proliferation and could be degraded into non-toxic constituents, showing great promise as wound dressing materials.     

Experiments of device failures in a spatial power-combining array

The performance of a spatial power-combining array with device failure is investigated. Experimental results show that the array still combines the power in the broadside direction when the DC open-circuit failure occurs. Analysis of measured radiation patterns indicated that the power radiated from the patch antenna attached to the failed device is much smaller than the power radiated from other patch antennas. The effects of the chip resistor and the RF impedance of failed device are discussed