A power-factor controller for single-phase PWM rectifiers

A novel power-factor controller for single-phase pulsewidth modulated rectifiers is proposed. The unity power-factor controller for a sinusoidal input current is derived using the feedback linearization concept. Two active switches and two diodes are utilized for AC-to-DC power conversion. Experimental results obtained on a 4 kW prototype are discussed     

Performance of DS/CDMA-based equatorial LEO satellite system usingturbo-codes

Improving the bit error rate (BER) performance at low elevation angles is a crucial determining factor for the capacity of any low earth orbit (LEO) satellite system. In previous work, it has been demonstrated that the BER performance of a DS/CDMA-based equatorial LEO satellite system on a downlink can be improved significantly by using satellite diversity. The authors address the issue of improving BER at low elevation angles by using turbo codes     

Pilot-Assisted Carrier Frequency Offset Estimation for OFDM systems with Multiple Preambles Over Fast Fading Channels

This paper proposes a carrier frequency offset (CFO) estimation scheme for OFDM systems over fast fading channels. In the proposed scheme, exploiting the multiple preambles with the identical values, we estimate the CFO over fast fading channels. In particular, we improve the performance of the CFO estimator by applying the overlapped windows to preambles. Through simulations, we validate the proposed estimation scheme by showing the effectiveness of the proposed estimator.     

High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices

We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 × 10^?1 cm²/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m² was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications.     

Optical and Electrical Properties of TixSi1‐xOy Films

Ti_xSi_1xO_y (TSO) thin films are fabricated using plasma‐enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub‐cycle ratio of TiO₂ and SiO₂. The refractive indices of SiO₂ and TiO₂ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current‐voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.     

Quantification of surface damage of tool steels after EDM

The surface transformation and damage in AISI O1, A2, D2 and D6 tool steels after EDM were investigated. The results show that the recast layer is composed of two distinct layers: a topmost layer solidifying inwards from the specimen surface and an intermediate layer solidifying outwards from the base of the molten metal. The depth of surface cracks is found to correlate well with the thickness of the white layer, the latter being a layer of rapidly solidified material which, depending on the tool steel material, may consist either primarily of the topmost recast layer, or both the topmost and a large part of the intermediate recast layer. The density of surface cracks, however, correlates better with the thickness of the overall recast layer.

Attempts were made to quantify the depth of white (or damaged) layer with respect to the process parameters and surface roughness after EDM. It is found that with a fixed dielectric and flushing condition, the damaged layer correlates well with the pulse energy irrespective of thetool steel material. On the other hand, even though the thickness of the white layer increases with the surface roughness, the result shows considerably more scatter. Based on the present findings, ways of estimating the depth of the damaged layer produced by EDM are proposed.     

Anodization for Simplified Processing and Efficient Charge Transport in Vertical Organic Field‐Effect Transistors

Vertical organic transistors are an attractive alternative to realize short channel transistors, which are required for powerful electronic devices and flexible electronic circuits operating at high frequencies. Unfortunately, the vertical device architecture comes along with an increased device fabrication complexity, limiting the potential of this technology for application. A new design of vertical organic field‐effect transistors (VOFETs) with superior electrical performance and simplified processing is reported. By using electrochemical oxidized aluminum oxide (AlO_x) as a pseudo self‐aligned charge‐blocking structure in vertical organic transistors, direct leakage current between the source and drain can be effectively suppressed, enabling VOFETs with very low off‐current levels despite the short channel length. The anodization technique is easy to apply and can be surprisingly used on both n‐type and p‐type organic semiconductor thin films with significant signs of degradation. Hence, the anodization technique enables a simplified process of high‐performance p‐type and n‐type VOFETs, paving the road toward complementary circuits made of vertical transistors.     

A vertically periodic defected ground structure and its application in reducing the size of microwave circuits

The microstrip and coplanar waveguide transmission lines combined by a vertically periodic defected ground structure (VPDGS) are proposed. The slow-wave effect, equivalent circuit, and the performances are shown. As an application example, VPDGS is adopted in the matching networks of an amplifier for size-reduction. Two series microstrip lines in input and output matching networks of the amplifier are reduced to 38.5% and 44.4% of the original lengths, respectively, due to the increased slow-wave effects, while the amplifier performances are preserved.     

A compact LTCC-based Ku-band transmitter module

Presents design, implementation, and measurement of a three-dimensional (3-D)-deployed RF front-end system-on-package (SOP) in a standard multi-layer low temperature co-fired ceramic (LTCC) technology. A compact 14 GHz GaAs MESFET-based transmitter module integrated with an embedded bandpass filter was built on LTCC 951AT tapes. The up-converter MMIC integrated with a voltage controlled oscillator (VCO) exhibits a measured up-conversion gain of 15 dB and an IIP3 of 15 dBm, while the power amplifier (PA) MMIC shows a measured gain of 31 dB and a 1-dB compression output power of 26 dBm at 14 GHz. Both MMICs were integrated on a compact LTCC module where an embedded front-end band pass filter (BPF) with a measured insertion loss of 3 dB at 14.25 GHz was integrated. The transmitter module is compact in size (400 /spl times/ 310 /spl times/ 35.2 mil/sup 3/), however it demonstrated an overall up-conversion gain of 41 dB, and available data rate of 32 Mbps with adjacent channel power ratio (ACPR) of 42 dB. These results suggest the feasibility of building highly SOP integrated RF front ends for microwave and millimeter wave applications.