Analysis of abnormal signals within the QRS complex of thehigh-resolution electrocardiogram

Presents a new, quantitative approach to measuring abnormal intra-QRS signals, using the high-resolution electrocardiogram (HRECG). These signals are conventionally known as QRS “notches and slurs.” They are measured qualitatively and form the basis for the ECG identification of myocardial infarction. The HRECG is used for detection of ventricular late potentials (LP), which are linked with the presence of a reentry substrate for ventricular tachycardia (VT) after a myocardial infarction. LP's are defined as signals from areas of delayed conduction which outlast the normal QRS period. The authors' objective is to quantify very low-level abnormal signals that may not outlast the normal QRS period. In this work, abnormal intra-QRS potentials (AIQP) were characterized by removing the predictable, smooth part of the QRS from the original waveform. This was represented as the impulse response of an ARX parametric model, with model order selected empirically from a training data set. AIQP were estimated using the residual of the modeling procedure. Critical AIQP parameters to separate VT and non-VT subjects were obtained using discriminant functions. Results suggest that AIQP indexes are a new predictive index of the HRECG for VT. The concept of abnormal intra-QRS potentials permits the characterization of pathophysiological signals contained wholly within the normal QRS period, but related to arrhythmogenesis. The new method may have other applications, such as detection of myocardial ischemia and improved ECG identification of the site of myocardial infarction, particularly in the absence of Q waves     

Enhancement of deep epileptiform activity in the EEG via 3-Dadaptive spatial filtering

The detection of epileptiform discharges (ED's) in the electroencephalogram (EEG) is an important component in the diagnosis of epilepsy. However, when the epileptogenic source is located deep in the brain, the ED's at the scalp are often masked by more superficial, higher-amplitude EEG activity. A noninvasive technique which uses an adaptive "beamformer" spatial filter has been investigated for the enhancement of signals from deep sources in the brain suspected of containing ED's. A forward three-layer spherical model was used to relate a dipolar source to recorded signals to determine the beamformer's spatial response constraints. The beamformer adapts, using the least-mean-squares (LMS) algorithm, to reduce signals from sources distant to some arbitrarily defined location in the brain. The beamformer produces three outputs, being the orthogonal components of the signal estimated to have arisen at or near the assumed location. Simulations were performed by using the same forward model to superimpose realistic ED's on normal EEG recordings. The simulations show the beamformer's ability to enhance signals emanating from deep foci by way of an enhancement ratio (ER), being the improvement in signal-to-noise ratio (SNR) to that observed at any of the scalp electrodes. The performance of the beamformer has been evaluated for 1) the number of scalp electrodes, 2) the recording montage, 3) dependence on the background EEG, 4) dependence on magnitude, depth, and orientation of epileptogenic focus, and 5) sensitivity to inaccuracies in the estimated location of the focus. Results from the simulations show the beamformer's performance to be dependent on the number of electrodes and moderately sensitive to variations in the EEG background. Conversely, its performance appears to be largely independent of the amplitude and morphology of the ED. The dependence studies indicated that the beamformer's performance was moderately dependent on eccentricity with the ER increasing as the dipolar source and the beamformer were moved from the center to the surface of the brain (1.51-2.26 for radial dipoles and 1.17-2.69 for tangential dipoles). The beamformer was also moderately dependent on variations in polar or azimuthal angle for radial and tangential dipoles. Higher ER's tended to be seen for locations between electrode sites. The beamformer was more sensitive to inaccuracies in both polar and azimuthal location than depth of the dipolar source. For polar locations, an ER > 1.0 was achieved when the beamformer was located within +/- 25 degrees of a radial dipole and +/- 35 degrees of a tangential dipole. Similarly, angular ranges of +/- 37.5 degrees and +/- 45 degrees, respectively, for inaccuracies in azimuthal locations. Preliminary results from real EEG records, comprising 12 definite or questionable epileptiform events, from four patients, demonstrated the beamformer's ability to enhance these events by a mean 100% (52%-215%) for referential data and a mean 104% (50%-145%) for bipolar data.     

Deep-space calibration of the WindSat radiometer

The WindSat microwave polarimetric radiometer consists of 22 channels of polarized brightness temperatures operating at five frequencies: 6.8, 10.7, 18.7, 23.8, and 37.0 GHz. The 10.7-, 18.7-, and 37.0-GHz channels are fully polarimetric (vertical/horizontal, /spl plusmn/45/spl deg/ and left-hand and right-hand circularly polarized) to measure the four Stokes radiometric parameters. The principal objective of this Naval Research Laboratory experiment, which flys on the USAF Coriolis satellite, is to provide the proof of concept of the first passive measurement of ocean surface wind vector from space. This paper presents details of the on-orbit absolute radiometric calibration procedure, which was performed during of a series of satellite pitch maneuvers. During these special tests, the satellite pitch was slowly ramped to +45/spl deg/ (and -45/spl deg/), which caused the WindSat conical spinning antenna to view deep space during the forward (or aft portion) of the azimuth scan. When viewing the homogeneous and isotropic brightness of space (2.73 K) through both the main reflector and the cold-load calibration reflector, it is possible to determine the absolute calibration of the individual channels and the relative calibration bias between polarimetric channels. Results demonstrate consistent and stable channel calibrations (with very small brightness biases) that exceed the mission radiometric calibration requirements.     

Low-temperature processing of shallow junctions using epitaxial and polycrystalline CoSi2

Cobalt disilicide is grown epitaxially on (100) Si from a 15 nm Co/2 nm Ti bilayer by rapid thermal annealing (RTA) at 900°C. Polycrystalline CoSi₂ is grown on (100) Si using a 15 nm Co layer and the same annealing condition. Silicide/p⁺-Si/n-Si diodes are made using the silicide as dopant source:¹¹B⁺ ions are implanted at 3.5–7.5 kV and activated by RTA at 600–900°C. Shallow junctions with total junction depth (silicide plus p⁺ region) measured by high-resolution secondaryion mass spectroscopy of 100 nm are fabricated. Areal leakage current densities of 13 nA/cm² and 2 nA/cm² at a reverse bias of -5V are obtained for the epitaxial silicide and polycrystalline silicide junctions, respectively, after 700°C post-implant annealing.     

A comparison of the diffusion of iodine into CdTe,Hg0.8Cd0.2Te and Zn0.05Cd0.95Te

Studies on the diffusion of iodine into CdTe, mercury cadmium telluride (Hg_0.8Cd_0.2Te, referred to as MCT) and zinc cadmium telluride (Zn_0.5Cd_0.95Te, referred to as ZCT) in the temperature range of 20 to 600°C are compared and discussed. The concentration profiles were measured using a radiotracer sectioning technique. As with the diffusion studies using the halogens into CdTe, the profiles were composed of four parts to which a computer package consisting of the sum of four complementary error functions (erfc) gave satisfactory fits. The diffusivity for the diffusion of iodine into MCT was faster than for the diffusion into CdTe, which was faster than for the diffusion into ZCT. The high diffusivity for the fastest profile part at 20°C indicates that when iodine is diffused from the vapor into these materials, it is not a suitable long term stable dopant in devices where sharp junctions are required.     

Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

Symmetric δ-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures. The 300 and 77K carrier concentrations for the InGaP PHEMT were 2.72 and 2.56 × 10¹² cm^{2 −2} and the mobilities were 5,920 and 22,000 cm^{2 2}/V.s. These excellent values suggest that problems associated with switching the anion at the channel heterojunction have been overcome. The corresponding values for the AlGaAs PHEMT were 2.51 and 2.19 × 10¹² cm^{2 −2} and 6,500 and 20,400 cm²/V.s. The uniformity in the indium concentration in the InGaAs layer as determined by photoluminescence, photoreflection, double crystal x-ray diffraction, and Rutherford backscattering was found to be good, but the percent In in the AlGaAs pseudo-morphic high electron mobility transistor (PHEMT) was less than that in the InGaP PHEMT even though the programmed values were the same. The uniformity in the doping distribution as determined by secondary ion mass spectroscopy and electrochemical capacitance-voltage measurements was found to be good, but it decreased with distance from the center of the susceptor. Also, most of the dopants in the δ-doped InGaP and AlGaAs layers were activated.     

Optimizing rod window width in positron emission tomography

A technique determines the optimal window width for orbiting rod transmission studies in positron emission tomography (PET). Windowing reduces noise in orbiting rod transmission studies. Lines-of-response (LOR) which intersect the rods generate primarily true coincidence events. LOR which pass far from the rods generate random and scatter events. Since the angular position of the orbiting rods is known in real-time, LOR which produce mostly noise are gated off. When optimally determined, the rod window width maximizes the noise equivalent counts (NEC) collected in the transmission study. Transaxial rod projection profiles of trues, randoms, and scatter produce NEC versus window width plots. For the ECAT EXACT line of PET systems and a 20-cm water cylinder, optimal is five LOR wide.     

The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayers

A fundamental research of structural defects induced upon post-growth processing of ZnSe/GaAs epilayers grown on (100) GaAs was done by identifying defect-related reflections in the transmission electron diffraction (TED) patterns of ZnSe. Structural artifacts, other than the as-grown defects, on this material system could be excluded according to our results. Four types of abnormal reflections have been observed in addition to primary reflections. These extra reflections are sensitive to the post-growth processing of ZnSe epilayers and may arise from various external effects, rather than epitaxy growth, such as irradiation damage, surface oxidation, and surface contamination. By mapping these reflections at several major zone axes using TED patterns, we found that the reciprocal lattice for a ZnSe crystal with structural defects consists of two distinct types of extra reflections associated with irradiation damage. The first type of extra reflections is ±1/3{111} and the other is ±1/2{111} corresponding to pure-edge and non-edge dislocation loops, respectively. For (100) oriented wafers, the ±1/3{111} and ±1/2{111} reflections were observed only on two of the four possible 〈111〉 variants (i.e. [111]_Zn and [111]_Zn)and this phenomenon was attributed to the anisotropy of defect distribution. Extra reflections associated with surface oxidation and contamination are also observed. The orientation relationships between a surface hexagonal ZnO and a cubic ZnSe film are [0001]_ZnO//[−111]_ZnSe, and [01−11]_ZnO//[011]_ZnSe. The origin, characterization, and elimination of these induced reflections are discussed. With the knowledge about these extra effects on structural defect formation, we have shown the real microstructure of ZnSe epilayers.     

Shear madness: new orthonormal bases and frames using chirpfunctions

The proportional-bandwidth and constant-bandwidth time-frequency signal decompositions of the wavelet, Gabor, and Wilson orthonormal bases have attracted substantial interest for representing nonstationary signals. However, these representations are limited in that they are based on rectangular tessellations of the time-frequency plane. While much effort has gone into methods for designing nice wavelet and window functions for these frameworks, little consideration has been given to methods for constructing orthonormal bases employing nonrectangular time-frequency tilings. The authors take a first step in this direction by deriving two new families of orthonormal bases and frames employing elements that shear, or chirp, in the time-frequency plane, in addition to translate and scale. The new scale-shear fan bases and shift-shear chevron bases are obtained by operating on an existing: wavelet, Gabor (1946), or Wilson basis set with two special unitary warping transformations. In addition to the theoretical benefit of broadening the class of valid time-frequency plane tilings, these new bases could possibly also be useful for representing certain types of signals, such as chirping and dispersed signals