Sequencing algorithms for multiple arc-welding robots considering thermal distortion

This paper focuses on sequencing welding lines in multiple arc-welding robot systems, which is the problem of assigning individual welding operations to robots as well as determining their sequences with the objective of minimizing the maximum completion time. Each welding operation is denoted by a weld line with two end-points, each of which can be a possible starting point for the welding operation. Thermal distortion is explicitly considered by introducing a delay between welding operations associated with weld lines near each other. Due to the complexity of the problem, this paper suggests three types of search heuristics, genetic algorithms, simulated annealing and tabu search, each of which incorporates new methods to generate neighbourhood solutions. To show the performances of the heuristics, computational experiments are performed on a number of randomly generated test problems, and the results are reported. In particular, some of the search heuristics outperform the exiting method.     

Rearrangement of Multiferroic BiFeO3 Nanodots Smaller than 15 nm Using Atomic Force Microscopy

In this study, we demonstrate an atomic force microscopy process for manipulating multiferroic BiFeO₃ nanodots smaller than 15 nm to desired positions on a Nb‐doped SrTiO₃ substrate. For formation of the BiFeO₃ nanodot array, nanocrystal movement was achieved using a +1.2 V biased conducting atomic force microscopy (CAFM) followed by nanocrystal attachment to the tip. Using this method, high‐density BiFeO₃ nanodot arrays with a density greater than 0.5 Tb/in.² can be achieved. Perfectly flipped ferroelectric polarization with an external electric field was observed for each BiFeO₃ nanodot, whose ferroelectric properties were confirmed using piezoelectric force microscopy.     

Suppression of defect level emissions in low temperature fabricated one-dimensional Mn doped ZnO nanorods

One-dimensional Mn doped ZnO nanocrystallites were synthesized through a facile low temperature surfactant free chemical route. The crystallite structure and morphological evolution of the particles were revealed to be of wurtzite phase and rod like structures from the X-ray diffraction and transmission electron microscopic analysis, respectively. Using Raman spectroscopy the role of oxygen related defects and phase purity in the Mn substituted ZnO systems were studied systematically. A significant suppression in the sub-band edge emission was visualized in the room temperature emission spectra of the Mn doped systems. The intensity ratio in between the near-band edge and defect-level emissions was observed to increase, signifying the reduction in oxygen related defects and revealing their influence on the crystallinity on the Mn substituted ZnO species. These variations were correlated with the increasing number of Mn ions in the host lattice, which results with their passivating action on the surface defects.     

Fast,Scalable Synthesis of Micronized Ge3N4@C with a High Tap Density for Excellent Lithium Storage

Nanostructuring has significantly contributed to alleviating the huge volume expansion problem of the Ge anodes. However, the practical use of nanostructured Ge anodes has been hindered due to several problems including a low tap density, poor scalability, and severe side reactions. Therefore, micrometer-sized Ge is desirable for practical use of Ge-based anode materials. Here, micronized Ge₃N₄ with a high tap density of 1.1 mg cm⁻² has been successfully developed via a scalable wet oxidation and a subsequent nitridation process of commercially available micrometer-sized Ge as the starting material. The micronized Ge₃N₄ shows much-suppressed volume expansion compared to micrometer-sized Ge. After the carbon coating process, a thin carbon layer (≈3 nm) is uniformly coated on the micronized Ge₃N₄, which significantly improves electrical conductivity. As a result, micronized Ge₃N₄@C shows high reversible capacity of 924 mAh g⁻¹ (2.1 mAh cm⁻²) with high mass loading of 3.5 mg cm⁻² and retains 91% of initial capacity after 300 cycles at a rate of 0.5 C. Additionally, the effectiveness of Ge₃N₄@C as practical anodes is comprehensively demonstrated for the full cell, showing stable cycle retention and especially excellent rate capability, retaining 47% of its initial capacity at 0.2 C for 12 min discharge/charge condition.     

Stall inception and warning in a single-stage transonic axial compressor with axial skewed slot casing treatment

Characteristic changes in the stall inception in a single-stage transonic axial compressor with an axial skewed slot casing treatment were investigated experimentally. A rotating stall occurred intermittently in a compressor with an axial skewed slot, whereas spike-type rotating stalls occurred in the case of smooth casing. The axial skewed slot suppressed stall cell growth and increased the operating range. A mild surge, the frequency of which is the Helmholtz frequency of the compressor system, occurred with the rotating stall. The irregularity in the pressure signals at the slot bottom increased decreasing flow rate. An autocorrelation-based stall warning method was applied to the measured pressure signals. Results estimate and warn against the stall margin in a compressor with an axial skewed slot.     

Oxygen-dependent enhancement of hydrogen production by engineering bacterial hemoglobin in Escherichia coli

H₂ production under aerobic conditions has been proposed as an alternative method to overcome the fundamentally low yield of H₂ production by fermentative bacteria by maximizing the number of electrons that are available for H₂. Here, we engineered Vitreoscilla hemoglobin (VHb) in Escherichia coli to study the effects of this versatile oxygen (O₂)-binding protein on oxic H₂ production in a closed batch system that was supplemented with glucose. The H₂ yields that were obtained with the VHb-expressing E. coli were greatly enhanced in comparison to the negative control cells in culture that started with high O₂ tensions. The formate hydrogen lyase (FHL) activity of oxically cultured, VHb-expressing cells was also much higher than that of the negative control cells. Through inhibitor studies and time-course experiments, VHb was shown to contribute to the improved H₂ yield primarily by increasing the efficiency of cellular metabolism during the aerobic phase before the onset of H₂ production and not by working as an O₂-scavenger during H₂ production. This new approach allowed more substrate to remain to be further utilized for the production of more H₂ from limited resources. We expect that VHb can be successfully engineered in potential aerobic H₂-producing microbial systems to enhance the overall H₂ production yield. In addition, the remarkably high FHL activity of oxically grown, VHb-expressing cells may make this engineered strain an attractive whole-cell biocatalyst for converting formate to H₂.     

Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

The characteristics of amorphous In-Ga-Zn-O(IGZO) thin film transistors (TFTs) and load inverters with a short channel length were studied. The IGZO TFTs showed a mobility value of > 5 cm²/Vs with a V_th value of -1.62 V. No degradation of the TFT properties, such as a negative shift of V_th or degradation of the subthreshold slope by the short-channel effect, were observed down to a channel length of 2 μm. A load inverter using an IGZO TFT with a gate length of 2 μm and resistor of 1 MΩ was fabricated and characterized, and a voltage gain of 4 was obtained at a V_DD value of 10 V. Additionally, the action of a dynamic inverter operating at frequencies of 1 and 10 kHz was characterized. Complete inverter action was obtained at 1 kHz, while an delay time of 0.53 μs was observed at 10 kHz. These promising results indicate that short channel IGZO TFTs are candidate for TFTs in the display industry, including active-matrix organic light-emitting diodes or multi-view three-dimension TV.