InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes

Measurements of 77K R_oA and 300K reverse bias dynamic impedance (R_dA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg_1-xCd_xTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents at small and modest reverse bias. We have observed that R_oA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature R_dA values. Diode arrays with high room temperature R_dA values at one volt reverse bias also have high R_oA values at 77K. Similarly, low R_dA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature measurements of current-voltage characteristics to evaluate Hg_1-xCd_xTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria for further study at lower temperatures.     

Simple ASK transmitter using a 790 nm self-pulsating laser diodefor local area networks

A simple amplitude shift keying (ASK) optical link is demonstrated by using a low-cost self-pulsating laser diode and an envelope detector for a low-cost broadband local area network. A link sensitivity of -22 dBm was achieved at 200 Mbit/s. Because the self-pulsation frequency can be tuned by the bias current, frequency division multiplexing can be simply implemented for multiuser applications     

Simulating process-induced gate oxide damage in circuits

Advanced processing techniques such as plasma etching and ion implantation can damage the gate oxides of MOS devices and thus pose a problem to circuit reliability. In this paper, we present a simulator which predicts oxide failure rates during and after processing and pinpoints strong charging current locations in the layout where changes can be made to improve circuit hot-carrier reliability. We present the models and experimental results used to develop the simulator and demonstrate the usefulness of this simulator     

Photocurrent effect on the zero-Bias dynamic resistance of HgCdTe photodiode

A new physical model is presented for the illumination-dependence of the zero-bias resistance-area product (R₀A) of HgCdTe photodiode. The model is based on three independent mechanisms. They are the depletion region volume change with the applied bias, the diffusion distance change with the moving depletion region edge, and the minority carrier accumulation in the depletion region which affects the minority carrier diffusion. Analytic equations are derived for the photodiode current-voltage characteristics and R₀A products. The results of the model have been compared with experimental data obtained from several Hg_0.7Cd_0.3Te diodes with an identical diode structure having different absorbing amount of light. The model showed good agreement with the experimental data.     

Destination-driven routing for low-cost multicast

We present a destination-driven algorithm that optimizes for applications, such as group video or teleconferencing, that require multicast trees with low total cost. The destination-driven algorithm uses a greedy strategy based on shortest-path trees and minimal spanning trees but biases routes through destinations. The performance of the algorithm is analyzed through extensive simulation and compared with several Steiner tree heuristics and the popular shortest-path tree (SPT) method. The algorithm is found to produce trees with significantly lower overall cost than the SPT while maintaining reasonable per-destination performance. Its performance also compares well with other known Steiner heuristics. Moreover, the algorithm does not suffer from high complexity common to most Steiner tree heuristics and builds a route by querying only incident links for cost information     

Development of the Base Station Controller and Manager in the CDMA Mobile System

The base station (BS) in the CDMA Mobile System (CMS) connects calls through the radio interface and is designed to provide mobile subscribers with high quality service in spite of mobile subscribers’ motions. The BS consists of multiple base station transceiver subsystems (BTSs), a base station controller (BSC) and a base station manager (BSM). This paper is concerned with the BSC and the BSM. The BSC is located between the BTSs and the mobile switching center (MSC) connected with the public network, and is responsible for controlling mobile calls from and to mobile subscribers via the BTSs. The BSM provides operator-interfaces per the BS and takes responsibility of operation and maintenance (OAM) of the BS. Design of the BSC is based on two module types: functional module and unit module. The functional module is used to support new services easily and the unit module to increase the system capacity economically. Both modular types are easily achieved by inserting the corresponding modules to the system. Particularly, in order to efficiently support the soft handover which is one of CDMA superior advantages, the BSC adopts a large high-speed packet switch connecting up to 512 BTSs, and thus mobile subscribers can be provided with soft handover in high probability. The BSM is based on a commercial workstation to support OAM functions efficiently and guarantee high reliability of the functions. The BSM uses graphical user interface (GUI) for efficient OAM functions of the BS.     

A Time‐Constrained Information Processing Model in Ubiquitous Environments

As pervasive computing is widely adopted and reliable networks are becoming more easily accessible, there is a rapidly growing need to develop a mechanism to analyze and evaluate the performance of ubiquitous environments. This paper presents an information processing model which characterizes a ubiquitous environment where a variety of pieces of information need to be exchanged among devices within a system. The proposed model not only provides analytical tools to evaluate the performance of devices, but also makes it possible to identify key factors in designing a ubiquitous environment. For illustrative purposes, a test bed is constructed and the performance of the system is assessed based on the proposed model.     

Complex Hydrides for Electrochemical Energy Storage

Complex hydrides have energy storage‐related functions such as i) solid‐state hydrogen storage, ii) electrochemical Li storage, and iii) fast Li‐ and Na‐ionic conductions. Here, recent progress on the development of fast Li‐ionic conductors based on the complex hydrides is reported. The validity of using them as electrolytes in all‐solid‐state lithium rechargeable batteries is also examined. Not only coated oxides but also bare sulfides are found to be applicable as positive electrode active materials. Results related to fast Na‐ionic conductivity in the complex hydrides are presented. In the last section, the future prospects for battery assemblies with high‐energy densities, and Mg ion batteries with the liquid and the solid‐state electrolytes are discussed.     

Improving Radio Frequency Transmission Properties of Graphene via Carrier Concentration Control toward High Frequency Transmission Line Applications

Graphene has been gradually studied as a high‐frequency transmission line material owing to high carrier mobility with frequency independence up to a few THz. However, the graphene‐based transmission lines have poor conductivity due to their low carrier concentration. Here, it is observed that the radio frequency (RF) transmission performance could be severely hampered by the defect‐induced scattering, even though the carrier concentration is increased. As a possible solution, the deposition of the amorphous carbon on the graphene is studied in the high‐frequency region up to 110 GHz. The DC resistance is reduced by as much as 60%, and the RF transmission property is also enhanced by 3 dB. Also, the amorphous carbon covered graphene shows stable performance under a harsh environment. These results prove that the carrier concentration control is an effective and a facile method to improve the transmission performance of graphene. It opens up the possibilities of using graphene as interconnects in the ultrahigh‐frequency region.