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71.
基于网络的物资招标采购系统的开发与应用 总被引:3,自引:0,他引:3
以某大型机械制造企业的招标采购管理为背景 ,介绍了基于网络的物资招标采购系统的系统构架、系统功能、开发模式以及系统特点。该系统实现了物资招标采购活动的电子化过程控制 ,加强了供应链上各企业间的信息传递 ,为企业物资招标系统的开发提供了可借鉴的经验 相似文献
72.
反相微乳法合成淀粉微球的研究 总被引:8,自引:0,他引:8
以可溶性淀粉为原料,环氧氯丙烷为交联剂,Span60为乳化剂,植物油为油相,采用反相微乳法合成淀粉微球.以吸附量为指标进行正交试验,得到淀粉微球的最佳合成条件为:淀粉浓度14%、油相用量100 mL、乳化剂用量0.75 g、交联剂用量4.8 mL、搅拌速度1 200 r/min.利用红外光谱和电子显微镜对产物进行表征,证明了可溶性淀粉与环氧氯丙烷发生了交联反应. 相似文献
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采用调查访问法、文献资料法等,对重庆市竞技体育的发展状况、有利条件与制约因素进行了分析研究,探讨了实现重庆市竞技体育发展的战略途径与对策,针对重庆市竞技体育的管理体制、竞技体育人才、资金投入、体育设施等方面存在的问题提出了具体的改进措施。 相似文献
75.
In the study, chemical compositions of 48 fragments of ancient ceramics excavated in 4 archaeological kiln sites which were
located in 3 cities (Hangzhou, Cixi and Longquan in Zhejiang Province, China) have been examined by energy-dispersive X-ray
fluorescence (EDXRF) technique. Then the method of SOM was introduced into the clustering analysis based on the major and
minor element compositions of the bodies, the results manifested that 48 samples could be perfectly distributed into 3 locations,
Hangzhou, Cixi and Longquan. Because the major and minor element compositions of two Royal Kilns were similar to each other,
the classification accuracy over them was merely 76.92%. In view of this, the authors have made a SOM clustering analysis
again based on the trace element compositions of the bodies, the classification accuracy rose to 84.61%. These results indicated
that discrepancies in the trace element compositions of the bodies of the ancient ceramics excavated in two Royal Kiln sites
were more distinct than those in the major and minor element compositions, which was in accordance with the fact. We argued
that SOM could be employed in the clustering analysis of ancient ceramics.
Supported by the Research Foundation of City University of Hong Kong (Grant No. 7001104) 相似文献
76.
Yi-Hsuan Hsiao Hang-Ting Lue Yen-Hao Shih Erh-Kun Lai Kuang-Yeu Hsieh Liu R. Chih-Yuan Lu 《Device and Materials Reliability, IEEE Transactions on》2008,8(2):344-351
Several novel negative Fowler-Nordheim (FN) operations for hot-hole-erased SONOS-type devices are studied. By using p+-poly gate instead of n+-poly gate, gate injection is greatly suppressed, and the device shows self-convergent VT after -FN. By using this self-converging property, -FN operation can be applied to both erased and programmed states in various sequences/algorithms. In the erase state, a short -FN channel erase called "soft erase" can be performed after hot-hole sector erase. It provides a strong electrical annealing effect to recover the hot-hole damages. On the other hand, "refill" is a shorter version of the soft erase method that expels shallow-level electrons and replaces them with deeper level ones. A spectrum blue shift model is proposed to explain the shifting of the trapped-electron energy distribution to a bluer (deeper) spectrum during refill. Various soft erase and refill conditions are examined to study the charge loss mechanism. The experimental results exhibit superior retention by combining the suitable soft erase and refill conditions. We find that the vertical charge losses measured by VG -accelerated retention test at room temperature (25 degC) are highly correlated to that measured at high temperature baking (150 degC), and a reliability model is proposed to explain these mechanisms. 相似文献
77.
Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory 总被引:2,自引:0,他引:2
Lue HT Wu CJ Tseng TY 《IEEE transactions on ultrasonics, ferroelectrics, and frequency control》2003,50(1):5-14
An improved theoretical analysis on the electrical characteristics of ferroelectric memory field-effect transistor (FeMFET) is given. First, we propose a new analytical expression for the polarization versus electric field (P-E) for the ferroelectric material. It is determined by one parameter and explicitly includes both the saturated and nonsaturated hysteresis loops. Using this expression, we then examine the operational properties for two practical devices such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) as well. A double integral also has been used, in order to include the possible effects due to the nonuniform field and charge distribution along the channel of the device, to calculate the drain current of FeMFET. By using the relevant material parameters close to the (Bi, La)/sub 4/Ti/sub 3/O/sub 12/ (BIT) system, accurate analyses on the capacitors and FeMFET's at various applied biases are made. We also address the issues of depolarization field and retention time about such a device. 相似文献
78.
Lin Wang Li Han Wanlong Guo Libo Zhang Chenyu Yao Zhiqingzi Chen Yulu Chen Cheng Guo Kaixuan Zhang Chia-Nung Kuo Chin Shan Lue Antonio Politano Huaizhong Xing Mengjie Jiang Xianbin Yu Xiaoshuang Chen Wei Lu 《光:科学与应用(英文版)》2022,(3):396-405
Despite the considerable effort, fast and highly sensitive photodetection is not widely available at the low-photon-energy range (~meV) of the electromagnetic s... 相似文献
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