Preparation of calcium-doped boron nitride by pulsed laser deposition

Calcium-doped BN thin films Ca_xBN_y (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al₂O₃(0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca₃N₂ disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.     

Orbital Degeneracy, Jahn–Teller Effect, and Superconductivity in Transition-Metal Chalcogenides

We have studied the electronic structure of FeSe_1?x Te _x and Ir_1?x Pt _x Te₂ using photoemission spectroscopy. For FeSe_1?x Te _x , angle-resolved photoemission results indicate that the Fe 3d yz/zx orbital degeneracy at ?? point and orbitally induced Peierls effect in the tetragonal lattice play important roles for the superconductivity. It is suggested that the Jahn-Teller instability of the yz/zx states couples with local lattice distortion derived from the Te substitution for Se and provides an inhomogeneous electronic state. Photoemission results of IrTe₂ with triangular lattice are also consistent with the orbitally induced Peierls scenario. The Pt substitution for Ir suppresses the static band Jahn?CTeller effect and induces an inhomogeneous electronic state in which orbital (or bond or nematic) fluctuations may help superconductivity through the Peierls effect.     

Processing of Al/SiC composites in continuous solid–liquid co-existent state by SPS and their thermal properties

Silicon carbide (SiC)-particle-dispersed-aluminum (Al) matrix composites were fabricated in a unique fabrication method, where the powder mixture of SiC, pure Al and Al–5mass% Si alloy was uniquely designed to form continuous solid–liquid co-existent state during spark plasma sintering (SPS) process. Composites fabricated in such a way can be well consolidated by heating during SPS processing in a temperature range between 798 K and 876 K for a heating duration of 1.56 ks. Microstructures of the composites thus fabricated were examined by scanning electron microscopy and no reaction was detected at the interface between the SiC particle and the Al matrix. The relative packing density of the Al–matrix composite containing SiC was higher than 99% in a volume fraction range of SiC between 40% and 55%. Thermal conductivity of the composite increased with increasing the SiC content in the composite at a SiC fraction range between 40 vol.% and 50 vol.%. The highest thermal conductivity was obtained for Al–50 vol.% SiC composite and reached 252 W/mK. The coefficient of thermal expansion of the composites falls in the upper line of Kerner’s model, indicating strong bonding between the SiC particle and the Al matrix in the composite.     

Scanning probe microscope lithography at the micro- and nano-scales

Scanning probe microscopy (SPM)-based lithography at the micro- and nano-scales is presented. Our method in SPM local oxidation involves two SPM tips, one having a robust blunt tip, a "micrometer tip," and the other having a sharp tip, a "nanometer tip." In tapping-mode SPM local oxidation experiments, Si oxide wires with sub-10 nm resolution were produced by precisely tuning the dynamic properties of the nanometer tip such as drive amplitude and quality factor. On the other hand, in order to perform large-scale oxidation, SPM tip with a contact area of microm2, which is about 10(4) times larger than that of the conventional nanometer tip, was prepared. We propose and demonstrate a method of performing micrometer-scale SPM local oxidation using the micrometer tip under contact-mode operation. The width of the Si oxide produced was clearly determined by the contact length of the tip. Furthermore, we explore the possibility of performing the sub-20 nm lithography of Si surfaces using SPM scratching with a diamond-coated tip. The influence of various scan parameters on the groove size was investigated. The groove size could be precisely controlled by the applied force, scan direction, and the number of scan cycles. There is no effect of the scan speed on the groove size. It is concluded that high-speed nanolithography can be achieved without the degradation of patterns by SPM scratching. SPM-based lithography has the advantage of being able to fabricate a desired structure at an arbitrary position on a surface and plays an important role for bridging the gap between micro- and nano-scales.     

10 micrometer-scale SPM local oxidation lithography

10 micrometer-scale scanning probe microscopy (SPM) local oxidation lithography was performed on Si. In order to realize large-scale oxidation, an SPM tip with a contact length of 15 microm was prepared by focused-ion-beam (FIB) etching. The oxidation was carried out in contact mode operation with the contact force ranging from 0.1 to 2.1 microN. The applied bias voltage was 50 V, and scanning speed was varied from 10 to 200 microm/s. The scan length was 15 microm for one cycle. The influence of contact force on the large-scale oxidation was investigated. At high contact force, the Si oxide with good size uniformity was obtained even with high scanning speed. The SPM tip with larger contact length may increase the spatial dimensions of the water meniscus between the SPM tip and sample surface, resulting in the larger dimensions of the fabricated oxide. Furthermore, the throughput of large-scale oxidation reached about 10(3) microm2/s by controlling the scanning speed and contact force of the SPM tip. It is suggested that SPM local oxidation can be upscaled by using a SPM tip with large contact length.     

Fabrication of single-electron transistors using field-emission-induced electromigration

We report a novel technique for the fabrication of planar-type Ni-based single-electron transistors (SETs) using electromigration method induced by field emission current. The method is so-called "activation" and is demonstrated using arrow-shaped Ni nanogap electrodes with initial gap separations of 21-68 nm. Using the activation method, we are easily able to obtain the SETs by Fowler-Nordheim (F-N) field emission current passing through the nanogap electrodes. The F-N field emission current plays an important role in triggering the migration of Ni atoms. The nanogap is narrowed because of the transfer of Ni atoms from source to drain electrode. In the activation procedure, we defined the magnitude of a preset current Is and monitored the current I between the nanogap electrodes by applying voltage V. When the current I reached a preset current Is, we stopped the voltage V. As a result, the tunnel resistance of the nanogaps was decreased from the order of 100 T(omega) to 100 k(omega) with increasing the preset current Is from 1 nA to 150 microA. Especially, the devices formed by the activation with the preset current from 100 nA to 1.5 microA exhibited Coulomb blockade phenomena at room temperature. Coulomb blockade voltage of the devices was clearly modulated by the gate voltage quasi-periodically, resulting in the formation of multiple tunnel junctions of the SETs at room temperature. By increasing the preset current from 100 nA to 1.5 microA in the activation scheme, the charging energy of the SETs at room temperature was decreased, ranging from 1030 meV to 320 meV. Therefore, it is found that the charging energy and the number of islands of the SETs are controllable by the preset current during the activation. These results clearly imply that the activation procedure allows us to easily and simply fabricate planar-type Ni-based SETs operating at room temperature.     

Quantitative evaluation of die casting surface defect severity by analyzing surface height

It is necessary in factories to assess the severity of the surface defects of castings, as a slight surface defect will be taken as qualified when it brings no bad effect or it can be removed by the subsequent processing. In practical production, professional technicians visually inspect the surface defect severity according to their individual experience. Therefore, it is difficult for them to maintain the same standard and accuracy in the subjective, tedious and labor-intensive work. Recently, image processing techniques based on optical images have been applied to achieve better accuracy and high efficiency. Unfortunately, optical images cannot directly quantify surface depth, which works as a crucial factor in the practical assessment of surface defect severity. The surface roughness evaluation algorithm, which takes into account of both area and depth information of the assessed surface, was applied to directly characterize surface defect severity based on surface asperity rather than optical image. The results using standard casting pieces show that surface defect severity has no apparent dependence on surface roughness. However, the subsequent results show that the root-mean-squared-deviation (RMSD) of surface gradient of flow line defects positively correlates with the increase of defect severity. The other types of defect do not present such tendency. Thus, practical workpieces with flow line defects on the surface were used to verify the universality of this tendency. The results show that surface roughness of an unqualified workpiece is larger than that of a qualified workpiece after surface slope adjustment, but presents no obvious coincidence before the adjustment. In contrast, the RMSD of an unqualified workpiece, no matter before or after the adjustment, is larger than that of a qualified one.