Smart CMOS Image Sensor With High SBR and Subpixel Resolution for Light-Section-Based Range Finding

Light-section (LS)-based range finders are commonly used for obstacle recognition in home service robots and autonomous vehicles. This paper proposes a smart CMOS image sensor for LS-based range finding. The proposed sensor can detect the laser light, even under very strong ambient-illumination levels by using a multiple-capture frame-correlated double sampling (F-CDS), which is realized with an inverter-based switched-capacitor F-CDS accumulator. The proposed sensor also includes on-chip winner-take-all circuits that significantly reduce the software and hardware complexity of interpolation for the subpixel resolution. The prototype chip was fabricated using a 0.35-mum CMOS process. The measurement results show that the proposed sensor can detect a laser line with an intensity that is 56.5 dB lower than that of the ambient illumination, providing a spatial resolution of plusmn0.16 pixels.     

Electrochemical Migration Characteristics of Eutectic Sn-Pb Solder Alloy in NaCl and Na<Subscript>2</Subscript>SO<Subscript>4</Subscript> Solutions

Anodic dissolution and the electrochemical migration characteristics of eutectic Sn-Pb solder alloy in deaerated 0.001% NaCl and Na₂SO₄ solutions were investigated using anodic polarization and water drop tests. Anodic polarization results revealed that a Pb-rich phase was preferentially ionized in deaerated 0.001% NaCl solution and an Sn-rich phase was predominantly ionized in deaerated 0.001% Na₂SO₄ solution, which coincides well with the composition of the dendrites formed during water drop tests. X-ray diffraction and photoelectron spectroscopy results showed that the surface oxide film formed on pure Sn in deaerated 0.001% NaCl solution is more stable than that formed on pure Sn in deaerated 0.001% Na₂SO₄ solution. The surface oxide film formed on pure Pb in deaerated 0.001% Na₂SO₄ solution is more stable than that formed on pure Sn in deaerated 0.001% NaCl solution. Therefore, the quality of the surface film of eutectic Sn-Pb solder in a chemical environment seems to be critical not only for corrosion resistance, but also for electrochemical migration resistance.     

Li-doped (Ba,Sr)TiO3 thick film interdigital capacitors for microwave applications

Microwave properties of Li-doped (Ba,Sr)TiO₃ thick film interdigital capacitors have been investigated. According to the reported papers, BaSrTiO₃ materials, paraelectric state at the room temperature, have high dielectric permittivity (>500 @ 1 MHz) and low loss tangent (<0.01 @ 1 MHz) in epitaxial thin film form; however, the sintering temperature of BaSrTiO₃ is over 1350 °C. In order to reduce the sintering temperature, Li (3 wt%) was added to the BaSrTiO₃ materials, and 10 μm thick Li-doped (Ba,Sr)TiO₃ films were screen printed on the alumina (Al₂O₃) substrate and sintered at 900 °C. Interdigital capacitor patterns with five fingers of 200 μm gap and 250 μm length were also designed and fabricated by employing the screen printing method with Ag electrode. The structural feature was analyzed with X-ray diffraction method. Frequency and temperature-dependent dielectric properties were characterized from 1 kHz to 1 MHz and 303-403 K, respectively. Also, current-voltage characteristics were investigated with an elevated temperature. Microwave transmission and reflectance properties of thick film interdigital capacitors will be discussed, and frequency dispersion of dielectric properties will be presented. Specially, designed Au/Li-doped (Ba,Sr)TiO₃/Ag-Pd/Al₂O₃ vertical structure was prepared to measure the tunability. In this sandwich type structure, Li-doped (Ba,Sr)TiO₃ films showed tenability of 7.15% at a bias electric field of 20 kV/cm.     

High Performance β-Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Gallium trioxide, β-Ga₂O₃, has been recently studied due to its promising semiconducting properties as active material in transistors or Schottky diodes. Transistors with β-Ga₂O₃ channels are mostly metal oxide field effect transistors (MOSFET), and they show very negative threshold voltages (V_th) in general. Metal semiconductor field effect transistors (MESFETs) with top gate are also reported with less negative V_th. Still, β-Ga₂O₃ MESFETs are only a few. Here, bottom gate architecture β-Ga₂O₃ MESFETs using transition metal dichalcogenide (TMD) NbS₂ and TaS₂ are reported. Due to the large work functions of those metallic TMDs, the MESFETs display minimum subthreshold swing of 61 mV dec⁻¹, small V_th of −1.2 V, minimum OFF I_D of ≈100 fA, and maximum ON/OFF current ratio of ≈10⁸. Both β-Ga₂O₃ Schottky diodes with TaS₂ and NbS₂ display good junction stability even after 300 °C measurements in 10 mTorr vacuum. When the β-Ga₂O₃ MESFET with TaS₂ gate is integrated as a switching FET into an organic light emitting diode (OLED) circuit, it demonstrates long-term leakage endurance performance, maintaining an OLED brightness higher than 58% of the initial intensity after 100 s passes since the ON-switching point, which is even superior to the performance of conventional a-IGZO MOSFET switch.     

Metallic Nanowire Coupled CsPbBr3 Quantum Dots Plasmonic Nanolaser

Plasmonic nanolasers provide a valuable opportunity for expanding sub-wavelength applications. Due to the potential of on-chip integration, semiconductor nanowire (NW)-based plasmonic nanolasers that support the waveguide mode attract a high level of interest. To date, perovskite quantum dots (QDs) based plasmonic lasers, especially nanolasers that support plasmonic-waveguide mode, are still a challenge and remain unexplored. Here, metallic NW coupled CsPbBr₃ QDs plasmonic-waveguide lasers are reported. By embedding Ag NWs in QDs film, an evolution from amplified spontaneous emission with a full width at half maximum (FWHM) of 6.6 nm to localized surface plasmon resonance (LSPR) supported random lasing is observed. When the pump light is focused on a single Ag NW, a QD-NW coupled plasmonic-waveguide laser with a much narrower emission peak (FWHM = 0.4 nm) is realized on a single Ag NW with the uniform polyvinylpyrrolidone layer. The QDs serve as the gain medium while the Ag NW serves as a resonant cavity and propagating plasmonic lasing modes. Furthermore, by pumping two Ag NWs with different directions, a dual-wavelength lasing switch is realized. The demonstration of metallic NW coupled QDs plasmonic nanolaser would provide an alternative approach for ultrasmall light sources as well as fundamental studies of light matter interactions.     

Self-Assembled Perovskite Nanoislands on CH3NH3PbI3 Cuboid Single Crystals by Energetic Surface Engineering

Organometal perovskite single crystals have been recognized as a promising platform for high-performance optoelectronic devices, featuring high crystallinity and stability. However, a high trap density and structural nonuniformity at the surface have been major barriers to the progress of single crystal-based optoelectronic devices. Here, the formation of a unique nanoisland structure is reported at the surface of the facet-controlled cuboid MAPbI₃ (MA = CH₃NH₃⁺) single crystals through a cation interdiffusion process enabled by energetically vaporized CsI. The interdiffusion of mobile ions between the bulk and the surface is triggered by thermally activated CsI vapor, which reconstructs the surface that is rich in MA and CsI with reduced dangling bonds. Simultaneously, an array of Cs-Pb-rich nanoislands is constructed on the surface of the MAPbI₃ single crystals. This newly reconstructed nanoisland surface enhances the light absorbance over 50% and increases the charge carrier mobility from 56 to 93 cm² V⁻¹ s⁻¹. As confirmed by Kelvin probe force microscopy, the nanoislands form a gradient band bending that prevents recombination of excess carriers, and thus, enhances lateral carrier transport properties. This unique engineering of the single crystal surface provides a pathway towards developing high-quality perovskite single-crystal surface for optoelectronic applications.     

Anomaly detection in particulate matter sensor using hypothesis pruning generative adversarial network

The World Health Organization provides guidelines for managing the particulate matter (PM) level because a higher PM level represents a threat to human health. To manage the PM level, a procedure for measuring the PM value is first needed. We use a PM sensor that collects the PM level by laser-based light scattering (LLS) method because it is more cost effective than a beta attenuation monitor-based sensor or tapered element oscillating microbalance-based sensor. However, an LLS-based sensor has a higher probability of malfunctioning than the higher cost sensors. In this paper, we regard the overall malfunctioning, including strange value collection or missing collection data as anomalies, and we aim to detect anomalies for the maintenance of PM measuring sensors. We propose a novel architecture for solving the above aim that we call the hypothesis pruning generative adversarial network (HP-GAN). Through comparative experiments, we achieve AUROC and AUPRC values of 0.948 and 0.967, respectively, in the detection of anomalies in LLS-based PM measuring sensors. We conclude that our HP-GAN is a cutting-edge model for anomaly detection.     

Korean automatic spacing using pretrained transformer encoder and analysis

Automatic spacing in Korean is used to correct spacing units in a given input sentence. The demand for automatic spacing has been increasing owing to frequent incorrect spacing in recent media, such as the Internet and mobile networks. Therefore, herein, we propose a transformer encoder that reads a sentence bidirectionally and can be pretrained using an out-of-task corpus. Notably, our model exhibited the highest character accuracy (98.42%) among the existing automatic spacing models for Korean. We experimentally validated the effectiveness of bidirectional encoding and pretraining for automatic spacing in Korean. Moreover, we conclude that pretraining is more important than fine-tuning and data size.     

No-reference quality assessment of dynamic sports videos based on a spatiotemporal motion model

This paper proposes an approach to improve the performance of no-reference video quality assessment for sports videos with dynamic motion scenes using an efficient spatiotemporal model. In the proposed method, we divide the video sequences into video blocks and apply a 3D shearlet transform that can efficiently extract primary spatiotemporal features to capture dynamic natural motion scene statistics from the incoming video blocks. The concatenation of a deep residual bidirectional gated recurrent neural network and logistic regression is used to learn the spatiotemporal correlation more robustly and predict the perceptual quality score. In addition, conditional video block-wise constraints are incorporated into the objective function to improve quality estimation performance for the entire video. The experimental results show that the proposed method extracts spatiotemporal motion information more effectively and predicts the video quality with higher accuracy than the conventional no-reference video quality assessment methods.     

Well‐Defined Functional Linear Aliphatic Diblock Copolyethers: A Versatile Linear Aliphatic Polyether Platform for Selective Functionalizations and Various Nanostructures

Low‐temperature anionic ring‐opening homopolymerizations and copolymerizations of two glycidol derivatives (allyl glycidyl ether (AGE) and ethoxyethyl glycidyl ether (EEGE)) are studied using a metal‐free catalyst system, 3‐phenyl‐1‐propanol (PPA) (an initiator) and 1‐tert‐butyl‐4,4,4‐tris(dimethylamino)‐2,2‐bis[tris‐(dimethylamino)phosphoranylidenamino]‐2Λ⁵,4Λ⁵‐catenadi(phosphazene) (t‐Bu‐P₄) (a promoter) in order to obtain well‐defined functional linear polyethers and diblock copolymers. With the aid of the catalyst system, AGE is found to successfully undergo anionic ring‐opening polymerization (ROP) even at room temperature (low reaction temperature) without any side reactions, producing well‐defined linear AGE‐homopolymer in a unimodal narrow molecular weight distribution. Under the same conditions, EEGE also undergoes polymerization, producing a linear EEGE‐homopolymer in a unimodal narrow molecular‐weight distribution. In this case, however, a side reaction (i.e., chain‐transfer reaction) is found to occur at low levels during the early stages of polymerization. The chemical properties of the monomers in the context of the homopolymerization reactions are considered in the design of a protocol used to synthesize well‐defined linear diblock copolyethers with a variety of compositions. The approach, anionic polymerization via the sequential step feed of AGE and EEGE as the first and second monomers, is found to be free from side reactions at room temperature. Each block of the obtained linear diblock copolymers undergoes selective deprotection to permit further chemical modification for selective functionalization. In addition, thermal properties and structures of the polymers and their post‐modification products are examined. Overall, this study demonstrates that a low‐temperature metal‐free anionic ROP using the PPA/t‐Bu‐P₄ catalyst system is suitable for the production of well‐defined linear AGE‐homopolymers and their diblock copolymers with the EEGE monomer, which are versatile and selectively functionalizable linear aliphatic polyether platforms for a variety of post‐modifications, nanostructures, and their applications.