Structural and electrical properties of the Ge x Si1−x /Si heterojunctions obtained by the method of direct bonding

The results of studying the structural and electrical properties of structures produced by the method of direct bonding of Ge _x Si_1?x and Si wafers are reported. The wafers were cut from the crystals grown by the Czochralski method. Continuity of the interface and the crystal-lattice defects were studied by X-ray methods using synchrotron radiation and by scanning electron microscopy. Measurements of the forward and reverse current-voltage characteristics of the p-Ge _x Si_1?x /n-Si diodes made it possible to assess the effect of the crystallattice defects on the electrical properties of heterojunctions. Satisfactory electrical parameters suggest that the technology of direct bonding is promising for the fabrication of large-area Ge _x Si_1?x /Si heterojunctions.     

Engineering Transition Metal Layers for Long Lasting Anionic Redox in Layered Sodium Manganese Oxide

Oxygen-redox-based-layered cathode materials are of great importance in realizing high-energy-density sodium-ion batteries (SIBs) that can satisfy the demands of next-generation energy storage technologies. However, Mn-based-layered materials (P2-type Na-poor Na_y[A_xMn_1−x]O₂, where A = alkali ions) still suffer from poor reversibility during oxygen-redox reactions and low conductivity. In this work, the dual Li and Co replacement is investigated in P2-type-layered Na_xMnO₂. Experimentally and theoretically, it is demonstrated that the efficacy of the dual Li and Co replacement in Na_0.6[Li_0.15Co_0.15Mn_0.7]O₂ is that it improves the structural and cycling stability despite the reversible Li migration from the transition metal layer during de-/sodiation. Operando X-ray diffraction and ex situ neutron diffraction analysis prove that the material maintains a P2-type structure during the entire range of Na⁺ extraction and insertion with a small volume change of ≈4.3%. In Na_0.6[Li_0.15Co_0.15Mn_0.7]O₂, the reversible electrochemical activity of Co³⁺/Co⁴⁺, Mn³⁺/Mn⁴⁺, and O^2-/(O₂)^n- redox is identified as a reliable mechanism for the remarkable stable electrochemical performance. From a broader perspective, this study highlights a possible design roadmap for developing cathode materials with optimized cationic and anionic activities and excellent structural stabilities for SIBs.     

Representations of finite fields and the Naini-Seberry partitioning problem

Safavi-Naini and Seberry suggested a subliminal channel based on partitioning a set /spl Gamma/ of the generator matrices of error-correcting codes. We give a systematic procedure to partition /spl Gamma/ into E/sub i/'s with |E/sub i/|=2/sup m/ for any m, which is more efficient than the method in Yang, C-N et al., (1997).     

Compact ultra-wideband printed antenna with band-rejection characteristic

A novel and compact ultra-wideband printed antenna with band-rejection characteristic is proposed. By cutting an L-shaped notch on the radiating patch, the impedance bandwidth of the proposed antenna can be enhanced. In addition, a C-shaped slot is introduced to obtain the band-rejection operation of the antenna. The antenna, with compact size of 15.5/spl times/21 mm including the ground plane, operates over 3.08-10.97 GHz and has the rejected band from 5.03 to 5.91 GHz.     

Small molecule interlayer for solution processed phosphorescent organic light emitting device

Using a 4,4′,4′′-tris(N-carbazolyl)-triphenylamine (TCTA) small molecule interlayer, we have fabricated efficient green phosphorescent organic light emitting devices by solution process. Significantly a low driving voltage of 3.0 V to reach a luminance of 1000 cd/m² is reported in this device. The maximum current and power efficiency values of 27.2 cd/A and 17.8 lm/W with TCTA interlayer (thickness 30 nm) and 33.7 cd/A and 19.6 lm/W with 40 nm thick interlayer are demonstrated, respectively. Results reveal a way to fabricate the phosphorescent organic light emitting device using TCTA small molecule interlayer by solution process, promising for efficient and simple manufacturing.     

Ambient Temperature Ultrasonic Bonding of Si-Dice Using Sn-3.5wt.%Ag

Ultrasonic bonding of Si-dice to type FR-4 printed circuit boards (PCB) with Sn-3.5wt.%Ag solder at ambient temperature was investigated. The under-bump metallization (UBM) on the Si-dice comprised Cu/Ni/Al from top to bottom with thicknesses of 0.4 μm, 0.4 μm, and 0.3 μm, respectively. The pads on the PCBs consisted of Au/Ni/Cu with thicknesses of 0.05/5/18 μm, sequentially from top to bottom. Solder was supplied as Sn-3.5wt.%Ag foil rolled to 100 μm thickness, and inserted in the joints. The ultrasonic bonding time was varied from 0.5 s to 3.0 s, and the ultrasonic power was 1400 W. The experimental results showed that reliable joints could be produced between the Si-dice and the PCBs with Sn-3.5wt.%Ag solder. The joint breaking force of “Si-die/solder/FR-4” increased with bonding times up to 2.5 s with a maximum value of 65 N. A bonding time of 3.0 s proved to be excessive, and resulted in cracks along the intermetallic compound between the UBM and solder, which caused a decrease in the bond strength. The intermetallic compound produced by ultrasonic bonding between the UBM and solder was confirmed to be (Cu, Ni)₆Sn₅. An erratum to this article can be found at     

Banyan multipath self-routing ATM switches with shared buffer typeswitch elements

The asynchronous transfer mode (ATM) has been selected as the multiplexing and switching technique for use in the public broadband ISDN (B-ISDN). We propose a large-scale ATM switch architecture in which a banyan multipath self-routing network is combined advantageously with a shared buffer type switch element. The proposed banyan space-division concept yields a simple architecture having the potential to accommodate easily the growth of switch size. Since the interconnection network between switch modules or between switch elements has a twofold banyan architecture, expansion in crosspoints or interconnections with the increase of switch size can be lessened. The multipath self-routing concept makes the switch performance better and leads to an efficient realization of a switch element on a single chip as the fundamental building block of a large-size switch. We analyze the required capacity for queuing buffers in the switching network. The multipath approach inevitably creates information sequence disturbances. Therefore, we also analyze the out-of-sequence phenomenon of a banyan multipath switching system. To satisfy the sequence integrity requirement for ATM, a simple approach is proposed for the multipath switch by using a spacing controller. In addition, we quantify the improvement of out-of-sequence performance under the spacing controller scheme     

Delocalized Electron Accumulation at Nanorod Tips: Origin of Efficient H2 Generation

Photocatalytic hydrogen (H₂) evolution requires efficient electron transfer to catalytically active sites in competition with charge recombination. Thus, controlling charge‐carrier dynamics in the photocatalytic H₂ evolution process is essential for optimized photocatalyst nanostructures. Here, the efficient delocalization of electrons is demonstrated in a heterostructure consisting of optimized MoS₂ tips and CdS nanorods (M‐t‐CdS Nrs) synthesized by amine‐assisted oriented attachment. The heterostructure achieves photocatalytic H₂ activity of 8.44 mmol h^?1 g^?1 with excellent long‐term durability (>23 h) without additional passivation under simulated solar light (AM 1.5, 100 mW cm^?2). This activity is nearly two orders of magnitude higher than that of pure CdS Nrs. The impressive photocatalytic H₂ activity of M‐t‐CdS Nrs reflects favorable charge‐carrier dynamics, as determined by steady‐state PL and time‐correlated single photon counting correlation analysis at low temperature. The MoS₂ cocatalysts precisely located at the end of the CdS Nrs exhibit ultrafast charge transfer and slow charge recombination via spatially localized deeper energy states, resulting in a highly efficient H₂ evolution reaction in lactic acid containing an electrolyte.     

Effective Polysulfide Rejection by Dipole‐Aligned BaTiO3 Coated Separator in Lithium–Sulfur Batteries

Although the exceptional theoretical specific capacity (1672 mAh g^?1) of elemental sulfur makes lithium–sulfur (Li–S) batteries attractive for upcoming rechargeable battery applications (e.g., electrical vehicles, drones, unmanned aerial vehicles, etc.), insufficient cycle lives of Li–S cells leave a substantial gap before their wide penetration into commercial markets. Among the key features that affect the cyclability, the shuttling process involving polysulfides (PS) dissolution is most fatal. In an effort to suppress this chronic PS shuttling, herein, a separator coated with poled BaTiO₃ or BTO particles is introduced. Permanent dipoles that are formed in the BTO particles upon the application of an electric field can effectively reject PS from passing through the separator via electrostatic repulsion, resulting in significantly improved cyclability, even when a simple mixture of elemental sulfur and conductive carbon is used as a sulfur cathode. The coating of BTO particles also considerably suppresses thermal shrinkage of the poly(ethylene) separator at high temperatures and thus enhances the safety of the cell adopting the given separator. The incorporation of poled particles can be universally applied to a wide range of rechargeable batteries (i.e., metal‐air batteries) that suffer from cross‐contamination of charged species between both electrodes.     

Synthesis,Morphology, and Properties of Poly(3‐hexylthiophene)‐block‐Poly(vinylphenyl oxadiazole) Donor–Acceptor Rod–Coil Block Copolymers and Their Memory Device Applications

Novel donor–acceptor rod–coil diblock copolymers of regioregular poly(3‐hexylthiophene) ( P3HT )‐block‐poly(2‐phenyl‐5‐(4‐vinylphenyl)‐1,3,4‐oxadiaz‐ole) ( POXD ) are successfully synthesized by the combination of a modified Grignard metathesis reaction ( GRIM ) and atom transfer radical polymerization ( ATRP ). The effects of the block ratios of the P3HT donor and POXD pendant acceptor blocks on the morphology, field effect transistor mobility, and memory device characteristics are explored. The TEM, SAXS, WAXS, and AFM results suggest that the coil block fraction significantly affects the chain packing of the P3HT block and depresses its crystallinity. The optical absorption spectra indicate that the intramolecular charge transfer between the main chain P3HT donor and the side chain POXD acceptor is relatively weak and the level of order of P3HT chains is reduced by the incorporation of the POXD acceptor. The field effect transistor (FET) hole mobility of the system exhibits a similar trend on the optical properties, which are also decreased with the reduced ordered P3HT crystallinity. The low‐lying highest occupied molecular orbital (HOMO) energy level (–6.08 eV) of POXD is employed as charge trap for the electrical switching memory devices. P3HT‐ b ‐POXD exhibits a non‐volatile bistable memory or insulator behavior depending on the P3HT / POXD block ratio and the resulting morphology. The ITO/ P3HT₄₄ ‐b‐ POXD₁₈ /Al memory device shows a non‐volatile switching characteristic with negative differential resistance (NDR) effect due to the charge trapped POXD block. These experimental results provide the new strategies for the design of donor‐acceptor rod‐coil block copolymers for controlling morphology and physical properties as well as advanced memory device applications.