Effect of multiple reflows on interfacial reaction and shear strength of Sn-Ag electroplated solder bumps for flip chip package

The effect of displacement rate and intermetallic compound (IMC) growth on the shear strength of electroplated Sn-2.5Ag (in wt.%) flip chip solder with Cu under-bump metallization (UBM) were investigated after multiple reflows. Cu₆Sn₅ IMC was formed at the interface after one reflow. After five reflows, two different IMC layers, consisting of a scallop-shaped Cu₆Sn₅ phase and a planar Cu₃Sn phase, and their thicknesses increased with increasing reflow number up to 10. The shear strengths peaked after four reflows, and then decreased with increasing reflow number. Increasing displacement rate increased the shear force. The tendency toward brittle fracture characteristics was intensified with increasing displacement rate and reflow number.     

Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates

Single-crystalline CdTe(133) films have been grown by metalorganic chemical vapor deposition on Si(211) substrates. We studied the effect of various growth parameters on the surface morphology and structural quality of CdTe films. Proper oxide removal from the Si substrate is considered to be the principal factor that influences both the morphology and epitaxial quality of the CdTe films. In order to obtain single-crystalline CdTe(133) films, a two-stage growth method was used, i.e., a low-temperature buffer layer step and a high- temperature growth step. Even when the low-temperature buffer layer shows polycrystalline structure, the overgrown layer shows single-crystalline structure. During the subsequent high-temperature growth, two-dimensional crystallites grow faster than other, randomly distributed crystallites in the buffer layer. This is because the capturing of adatoms by steps occurs more easily due to increased adatom mobility. From the viewpoint of crystallographic orientation, it is assumed that the surface structure of Si(211) consists of (111) terrace and (100) step planes with an interplanar angle of 54.8°. This surface structure may provide many preferable nucleation sites for adatoms compared with nominally flat Si(100) or (111) surfaces. The surface morphology of the resulting films shows macroscopic rectangular-shaped terrace—step structures that are considered to be a (111) terrace with two {112} step planes directed toward 〈110〉.     

Influence of pad shape on self-alignment in electronic packaging

Anisotropic self-alignment of the noncircular pads is investigated to reduce the misalignment in electronic packaging, and the effects of the direction and length ratio of the noncircular pads are analyzed. The restoring forces of circular and noncircular pads are calculated numerically using the surface evolver and are compared with the experimental data. The restoring force in the minor-axis direction of the noncircular pad becomes largest followed by the circular pad and the major-axis direction of the noncircular pad. Directionality increases with the length ratio, which implies that more accurate alignment can be achieved in the specific direction.     

TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology

The present status of work on diffussion barriers for copper in multilevel interconnects is surveyed briefly, with particular emphasis on TiN and TaN, and silicon dioxide as the interlayer dielectric. New results are presented for these materials, combining thermal annealing and bias temperature stress testing. With both stress methods, various testing conditions are compared using capacitance-vs-voltage (C-V) and leakage current-vs-voltage (I-V) measurements to characterize the stressed samples. From an evaluation of these data and a comparison with other testing approaches, conditions for a consistent testing methodology of barrier reliability are outlined.     

Fiber-optic sensor array based on Sagnac interferometer with stablephase bias

We propose and experimentally demonstrate a novel fiber sensor array based on a Sagnac interferometer with very simple electronic signal processing. A stable quadrature phase bias was obtained using a phase modulator, and the polarization-induced signal fading was suppressed by using a depolarizer and a broad-band source. A phase sensitivity of about 4.0 μrad_rms/√Hz at 5 kHz was obtained using a two-sensor array     

Fabrication of laser-annealed poly-TFT by forming aSi1-xGex thermal barrier

Germanium is ion-implanted deeply into the bottom of a Si film before excimer laser annealing begins. During the solidification step, the implanted Ges form a high thermal resistive Si_1-xGe_x alloy, which reduces the thermal extraction rate of laser energy and the grain growth rate. Laterally larger but double-stacked grains were achieved with a higher Ge implant dose and a slower grain growth. The performance of fabricated poly-TFTs has been enhanced with a Ge 5×10¹⁵/cm² at 80 keV implant but deteriorated at a higher dose. We attribute this enhancement to a laterally enlarged grain and show that the performance of TFT is deteriorated more dominantly by other Ge-related factors than by surface roughening and Ge-induced defect creation     

A 1.8-GHz self-calibrated phase-locked loop with precise I/Qmatching

This paper describes a 1.8-GHz self-calibrated phase-locked loop (PLL) implemented in 0.35-μm CMOS technology. The PLL operates as an edge-combining type fractional-N frequency synthesizer using multiphase clock signals from a ring-type voltage-controlled oscillator (VCO). A self-calibration circuit in the PLL continuously adjusts delay mismatches among delay cells in the ring oscillator, eliminating the fractional spur commonly found in an edge-combing fractional divider due to the delay mismatches. With the calibration loop, the fractional spurs caused by the delay mismatches are reduced to -55 dBc, and the corresponding maximum phase offsets between the multiphase signals is less than 0.20. The frequency synthesizer PLL operates from 1.7 to 1.9 GHz and the closed-loop phase noise is -105 dBc/Hz at 100-kHz offset from the carrier. The overall circuit consumes 20 mA from a 3.0-V power supply     

Modal MRTD approaches for the efficient analysis of waveguidediscontinuities

This paper, the multi-resolution time-domain (MRTD) technique is applied to the waveguide discontinuity problem for fast-scattering parameter computation. To improve the computational efficiency, both three-dimensional (3-D) waveguide regions, including discontinuities, and one dimensional (1-D) homogeneous waveguide region, terminated with the modal absorbing boundary condition (ABC), are simulated in the wavelet domain with the mode composition/expansion algorithm from the modal analysis. A WG-90 rectangular waveguide with a thick asymmetric iris is analyzed and the numerical results are compared with conventional finite-difference time-domain (FDTD) results and mode-matching results     

A moving-actuator type electromechanical total artificial heart.II. Circular type and animal experiment

A new type of electromechanical total artificial heart (TAH) based on circular rolling-cylinder mechanism was developed to overcome critical problems in motor-driven artificial hearts such as large size and difficulties in fitting the heart to atrial remnants and arterial vessels. Its performance and reliability were evaluated in mock circulation and in an animal implant experiment. The total weight and volume of the pump is 650 g and 600 mL, respectively. This new pump was implanted in a calf for total heart replacement and 96 h of survival was achieved. The whole system, including pump, controller, and control algorithm performed well enough to improve the prospect of eventual clinical application of our TAH system.