The optimal flow-pattern of multiple effect evaporator systems

The optimization of the flow-pattern for a multiple effect evaporator system is discussed as a vector minimum problem. First a new program to solve the design problem for various flow-patterns with no stream mixing or splitting and an arbitrary number of effects is described. Second the set of noninferior flow-patterns is generated by enumerating one-by-one for all flow-patterns. This method works well in synthesizing multiple effect evaporator configuration.     

Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures

We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T _C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T _C of the layer.     

Chemical bath deposition of Cds buffer layer for GIGS solar cells

We investigated the chemical bath deposition of US thin flims on the Cu(In,Ga)Se₂ (GIGS) absorber layers and glasses. The process of the chemical bath deposition of US layer affected the performance of the CIGS solar cells. The CdS layers were deposited on the CIGS film from CdI₂, thiourea (NH₂CSNHn₂) and ammonia solutions. The influence of pH on the chemical bath deposition process was studied. The surfaces of the US films were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The compositions of the obtained CdS layers were analyzed by Auger electron spectroscopy (AES). The performance of the CIGS solar cells was discussed on the basis of the characteristics of the chemical bath deposited layer. We have successfully fabricated a high-efficiency CIGS solar cell with an efficiency of 17% using a US layer with stoichiometric composition.     

Calculation of thermodynamic quantities of metals and alloys by the statistical moment method

The thermodynamic properties of metals and alloys are studied using the moment method in the statistical dynamics, which allows us to take into account the anharmonicity of thermal lattice vibrations and size mismatch of constituent atoms, going beyond the quasi-harmonic approximation. Within the fourth-order moment approximation, the free energy and equilibrium lattice spacing of the binary alloys are given explicitly in terms of the effective pair potentials and the second- and fourth-order vibrational constants. The long-range order (LRO) parameter η and order-disorder transition temperatures (ODTs) T_c of binary alloys are obtained by solving the explicit transcendental equations. The numerical calculations of thermodynamic quantities for Cu₃Au and β-CuZn alloys show that the inclusion of the anharmonicity of lattice vibration plays an essentially important role in determining the phase stabilities of metals and alloys.     

Multimedia processors

This paper describes large-scale-integration programmable processors designed for multimedia processing such as real-time compression and decompression of audio and video as well as the generation of computer graphics. As the target of these processors is to handle audio and video in real time, the processing capability must be increased tenfold compared to that of conventional microprocessors, which were designed to handle mainly texts, figures, tables, and photographs. To clarify the advantages of a high-speed multimedia processing capability, we define these chips as multimedia processors. General-purpose microprocessors for workstations and personal computers (PCs) use special built-in hardware for multimedia processing, so the multimedia processors described include these modified general-purpose microprocessors. After reviewing the history of programmable processors, we classify multimedia processors into five categories depending on their basic architecture. The categories are reduced instruction set computer (RISC) microprocessors for workstations, complex instruction set computer microprocessors for PCs, embedded RISCs, low-power digital signal processors (DSPs), which are mainly used for mobile communications devices, and media processors that support PCs for multimedia applications. These five classes are then grouped into two: microprocessors with a multimedia instruction set and highly parallel DSPs. An architectural comparison between these two groups on the basis of Moving Picture Experts Group decoding applications is made, and the advantages and disadvantages of each class are clarified. Future processors, including “system on a chip,” and their applications are also discussed     

Calculation of thermodynamic quantities of metals and alloys by statistical moment method

The thermodynamic quantities of metals and alloys are studied using the moment method in the quantum statistical mechanics, going beyond the quasi-harmonic approximations. Including the power moments of the atomic displacements up to the fourth order, the free energy, specific heats C_v and C_p, mean square atomic displacements and thermal lattice expansion coefficients are derived explicitly in terms of the second and fourth order vibrational coupling constants. The thermodynamic quantities are calculated both for cubic (fcc and bcc) and closed packed hexagonal (hcp) metals. The Lennard–Jones type of potentials as well as the effective interatomic potentials derived from the tight-binding (TB) total energy calculation scheme are used. The calculated thermodynamic quantities are favorably compared with the experimental results. For the calculations of alloys, we investigate the effects of thermal lattice vibration on the long range order (LRO) parameter and order–disorder transitions of the ordered binary alloys.     

A high-speed 16-kb GaAs SRAM of less than 5 ns using triple-levelmetal interconnection

The authors have realized 16-kb SRAMs with maximum address access time of less than 5 ns and typical power dissipation of less than 2 W at temperatures ranging from 25°C to 100°C. For the RAMs, they have developed a triple-level Au-based interconnection technology that reduces the wiring length and chip size of the SRAM so as to achieve high speed and high yield. Consequently, the wiring length and chip size are reduced to 69% and 58%, respectively, of those obtained by in previous work. The authors experimentally compared the delay time incurred by double-level interconnection and that by triple-level interconnection. This ratio is found to agree well with the simulated one by a model with distributed RC delay. After successfully suppressing Au hillock generation by lowering the process temperature, yield per wafer of 10% is obtained     

Clinical studies on vancomycin in the treatment of MRSA infection

We evaluated the effectiveness and safety of vancomycin (VCM) alone and in combination with beta-lactam antibiotics in the treatment of MRSA infections, and obtained the following results: 1. Effectiveness. (1) In cases of MRSA infections alone, the improvement rate was 71.4% (5/7 patients) with VCM alone and 77.8% (35/45) with VCM in combination with beta-lactam antibiotics. (2) In cases of polymicrobial infections, few cases were treated with VCM alone, but the improvement rate in combination use with beta-lactam antibiotics was 71.8% (28/39). 2. Bacteriological effect. (1) In cases of single infection with MRSA, the rate of bacterial eradication was 71.4% (5/7) with VCM alone and 68.2% (30/44) with VCM in combination with beta-lactam antibiotics. (2) In cases of polymicrobial infections, few cases were treated with VCM alone, but the rate of bacterial eradication in combination use with be ta-lactam antibiotics was 63.2% (24/38) against MRSA and 31.6% (12/38) against polymicrobial agents including MRSA. 3. Safety. Occurrences of adverse reactions and abnormal laboratory test values when VCM was used alone or when it is used in combination with another drug were about the same in these uses. As a whole, advance reactions were observed in 16 patients (9.5%). Main adverse reactions were whole body redness, drug eruption, and rash etc. Abnormal laboratory test values were observed mainly in hepatic functions, and renal functions. 4. VCM concentrations in blood was determined in 38 patients. Doses of 0.5 g and 1.0 g of VCM was administered by intravenous drip infusion over a period of 1 to 2 hours, and mean blood concentrations 1 to 2 hours after the completion of drip infusion were 25.4 micrograms/ml and 14.4 micrograms/ml, respectively. 5. Synergic effects between VCM and other antibiotics tested were observed in FIC index against all of the six MRSA strains isolated from six patients, and the clinical effects of improvement or better were obtained against five of them.     

Immunologic studies of a case of myasthenia gravis associated with pemphigus vulgaris after thymomectomy

A case of myasthenia gravis was associated with thymoma and pemphigus vulgaris. The bullous lesions developed after partial thymomectomy, cobalt (60Co) irradiation, and 3 days' extensive sunbathing, although a retrospective study of the patient's sera by quantitative indirect immunofluorescence method indicated that antiepithelial antibody already was positive before the clinical appearance of pemphigus vulgaris. Serial observation of the patient's clinical course and titrations of antiepithelial, antimuscle, and antithymus antibodies suggested a reverse relationship between the severity of myasthenia gravis and titers of antimuscle and anitithymus antibodies, and a parallel relationship between pemphigus vulgaris and antiepithelial antibody. Review of the literature suggests a close relationship between pemphigus vulgaris and myasthenia gravis and thymoma, particularly thymoma injured by medical procedures.     

A GaAs MESFET with a partially depleted p layer for SRAMapplications

A GaAs MESFET with a partially depleted p layer that has a specific application to SRAMs has been developed. The short-channel effect is well suppressed for gate lengths down to 0.5 μm by a rather dense p layer buried under the channel. Its acceptor ion dose is as high as 2×10¹² cm^-2, which corresponds to a partially depleted condition. As for applications for SRAMs, it is possible to attain fully functional 7-ns 4-kb SRAMs that are operative at 75°C by using the FET with a 1-μm gate. A chip yield of 22% has been achieved in a 3-in wafer