Ectopic gastric mucosa in the upper esophagus: detection and radiographic findings

PURPOSE: To detect and characterize the appearance of islands of ectopic gastric mucosa in the upper esophagus at routine examination of the upper gastrointestinal (GI) tract. MATERIALS AND METHODS: Well-distended upper esophagus was documented with spot radiographs obtained with routine double-contrast examination performed after administration of high-density barium in nine patients. Detected lesions were confirmed by means of endoscopy and biopsy. RESULTS: Twelve lesions were detected. Radiographic findings were characterized by either a discrete, shallow depression surrounded by a subtle, rimlike elevation on double-contrast images or by a pair of small indentations on the same wall on full-column, single-contrast images at the level of the thoracic inlet. Endoscopic examination revealed well-circumscribed areas of reddish mucosa located 15-26 cm from the incisors. CONCLUSION: Ectopic gastric mucosa in the upper esophagus is easily demonstrated at routine examination of the upper GI tract. Diagnosis can be based on location and characteristic radiographic appearance.     

Long-term reliability of amorphous silicon solar cells

The long-term reliability of amorphous silicon solar cells of 1988 products over more than ten years is estimated by a simulation method using the Weibull function with the experimental data of 1988 products exposed outdoors for five years and those of 1983 products exposed outdoors for ten years. The mathematical model is developed based on the accelerated tests and recovery tests in a laboratory for a short period of time. The simulation method is discussed. The decrease of the conversion efficiency of 1988 products after ten years of exposure is estimated to be 25% and 35% at best and worst, respectively. The newest products having initial conversion efficiency of over 13% in a small cell are expected to maintain an efficiency of about 10% at best over a decade.     

A 7-ns/850-mW GaAs 4-kb SRAM with little dependence on temperature

A GaAs 1 K×4-kb SRAM designed using a novel circuit technology is described. To reduce the temperature dependence and the scattering of the access time, it was necessary to increase the signal voltage swing and to reduce the leakage current in access transistors of unselected memory cells. In the 4-kb SRAM, source-follower circuits were adopted to increase the voltage swing, and the storage nodes of unselected memory cells were raised by about 0.6 V to reduce the subthreshold leakage current in the access transistors. The 4-kb SRAM was fabricated using 1.0-μm self-aligned MESFETs with buried p-layers beneath the FET regions. A maximum address access time of 7 ns and a power dissipation of 850 mW were obtained for the galloping test pattern at 75°C. Little change in the address access time was observed between 0 and 75°C     

VLSI design and implementation fuels the signal-processingrevolution

The article provides a comprehensive overview of the history of how signal-processing researchers have been effectively transforming signal-processing algorithms into efficient implementations. Starting from the early days of analog circuits for signal processing, to digital signal processors (DSPs), to application specific DSPs and programmable DSPs, and to the trend of integrating a complete system on a single chip, this article provides a thorough coverage of the past and the present of design and implementation technology for signal processing systems. Moreover, it presents the exciting challenges faced by the study of the design and implementation of current and future signal processing applications. Topics covered include milestones in signal-processing integrated circuits, the past and future of the signal processor, signal processing in consumer applications, and design automation for signal processing     

Dihydropyridine type calcium channel blocker-induced turbid dialysate in patients undergoing peritoneal dialysis

Continuous awareness of systemic mycosis in immunocompromised patients is important. Early diagnosis is based on (direct) histologal examination and CT scan. Since treatment should start as early as possible, there is usually no time to await results of tissue cultures. Systemic treatment with amphotericin B and aggressive surgical débridement should be performed as soon as possible, while the place of hyperbaric oxygen and G-CSF remains to be established. In addition to routine preventive measures, prophylactic intranasal application of amphotericin B seems to be of value.     

Analysis of temperature and illumination dependencies of CIS cell performance

Cell performances of Cu(In,Ga)Se₂ (CIGS) thin-film solar cells were measured and analyzed as a function of temperature and illumination. The J_sc and V_oc were linearly changed with the temperature in the range of 10°C–70°C, and the J_sc was proportional to the illumination intensity in the range up to 130 mW/cm². It was shown that I–V curves in CIGS cells could be calibrated from the measured condition to other conditions such as the standard condition and field test ones, using the calibration method proposed for crystal Si solar cells.     

Resolution Improvement of All-Optical Analog-to-Digital Conversion Employing Self-frequency Shift and Self-Phase-Modulation-Induced Spectral Compression

We demonstrate and investigate resolution improvement of optical quantization using soliton self-frequency shift (SSFS) and optical coding using optical interconnection for an all-optical analog-to-digital conversion (ADC). Incorporating spectral compression into the optical quantization allows us to improve the resolution bit according to the spectral compression ratio with keeping its throughput. The proposed scheme consists of optical quantization using SSFS and self-phase modulation (SPM) induced spectral compression and optical coding using optical interconnection based on a binary conversion table. In optical quantization, the powers of input signals are discriminated by referring to the center wavelengths after the SSFS. The compression of the spectral width allows us to emphasize the differences of their center wavelengths, and improve the number of resolution bits. Optical interconnection generates a bit-parallel binary code by appropriate allocation of a level identification signal, which is provided as a result of optical quantization. Experimental results show the eight periods transfer function, that means, the four read-out bit operation of the proposed scheme in binary code. Simulation results indicate that the proposed optical quantization has the potential of 100 GS/s and 4-b resolution, which could surpass the electrical bandwidth limitations.     

A 2.2-V operation, 2.4-GHz single-chip GaAs MMIC transceiver forwireless applications

A 2.2-V operation, single-chip GaAs MMIC transceiver has been successfully developed for 2.4-GHz-band wireless applications such as wireless local area network terminals. The chip is fabricated using a planar self-aligned gate field-effect transistor. To generate sufficient negative voltage for gate-biasing and to enhance switch power handling capability under a 2.2-V supply, a newly designed negative voltage generator with a voltage doubler (NVG-VD) and a switch control logic circuit are integrated on the chip, together with a power amplifier, a transmit/receive switch, and a low-noise amplifier. The NVG-VD is designed to produce both a 3.3-V positive step-up voltage and a -2.1-V negative voltage under 2.2 V in operation voltage. Biased with these outputs, the logic circuit accommodates high power outputs of over 25 dBm with a low operating voltage of 2.2 V in transmit mode, With a 2.45-GHz modulated signal based on IS-95 standards, a 21-dBm output power and a 33% efficiency are obtained at a ±1.25-MHz-offset adjacent channel power rejection of -45 dBc. In receive mode, a low-noise amplifier achieves a 1.8-dB noise figure and an 11-dB gain with a 3.0-mA current. This transceiver enables significant size and weight reductions in 2.4-GHz-band wireless application terminals     

Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs

A process for fabricating T-shaped gates using photo/EB hybrid exposure has been developed. This process is suitable for mass production of high performance HEMTs. A 0.2 mu m T-shaped gate HEMT exhibits very low noise figures of 0.40 and 1.1 dB at 12 and 40 GHz, respectively, and high reliability.<>