Anomalies in hepatobiliary excretion of technetium-99m-MAG3 preparations

Technetium-99m-MAG3 is accepted as a renal tubular function agent. However, sporadic liver and gall bladder visualisation during its clinical use is clearly a disadvantage. HPLC-purified 99mTc-MAG3 samples exhibited appreciable hepatobiliary uptake (7%), and an elevated level of such uptake was observed in unpurified kit preparations, which was stated to be associated with the excretory property of the radiolabeled kit impurities. To verify this we attempted to quantitate the hepatobiliary uptake of the kit preparations with that of its radiolabeled components. The contribution of each component toward hepatobiliary uptake of the sample was calculated from their abundance in the chelate mixture and the individual biodistribution of the isolated components. However, the anticipated hepatobiliary uptake of different preparations of 99mTc-MAG3 calculated in this way was always lower than that of the experimental value determined directly. Further work is needed to explain the anomaly.     

Distribution of IgG subclasses in antimonial unresponsive Indian kala-azar patients

BACKGROUND: Interleukin 10 (IL-10) decreases the severity of experimental acute pancreatitis. The role of endogenous IL-10 in modulating the course of pancreatitis is currently unknown. AIMS: To examine the systemic release of IL-10 and its messenger RNA production in the pancrease, liver, and lungs and analyse the effects of IL-10 neutralisation in caerulein induced acute pancreatitis in mice. METHODS: Acute necrotising pancreatitis was induced by intraperitoneal caerulein. Serum levels of IL-10 and tumour necrosis factor (TNF), and tissue IL-10 and TNF-alpha gene expression were assessed. After injecting control antibody or after blocking the activity of endogenous IL-10 by a specific monoclonal antibody, the severity of acute pancreatitis was assessed in terms of serum enzyme release, histological changes, and systemic and tissue TNF production. RESULTS: In control conditions, serum IL-10 levels increased and correlated with the course of pancreatitis, with a maximal value eight hours after induction. Both IL-10 and TNF-alpha messengers showed a similar course, and were identified in the pancreas, liver, and lungs. Neutralisation of endogenous IL-10 significantly increased the severity of pancreatitis and associated lung injury as well as serum TNF protein levels (+75%) and pancreatic, pulmonary, and hepatic TNF messenger expression (+33%, +29%, +43%, respectively). CONCLUSIONS: In this non-lethal model, systemic release of IL-10 correlates with the course of acute pancreatitis. This anti-inflammatory response parallels the release of TNF and both cytokines are produced multisystemically. Endogenous IL-10 controls TNF-alpha production and plays a protective role in the local and systemic consequences of the disease.     

Unimportance of geometric nonlinearity in analysis of flanged joints with metal-to-metal contact

Gasketless flanged joints with metal to metal contact offer some advantages over gasketed joints such as lower weight and better fatigue life. Design of such joints is often based on finite element analyses, and complicated by the fact that the area of contact between the flanges changes upon application of loads. Such analyses can be done using commercial software, which can incorporate geometrical nonlinearities as well as contact nonlinearities. Engineering intuition suggests that the role of geometrical nonlinearities might be small for such problems. However, many engineers continue to use the fully nonlinear analyses. Our aim in this paper is simply to put on record that significant savings in time can be obtained by “turning off” geometric nonlinearities in such analyses, with negligible loss of accuracy. To this end, a nonautomated implementation of the basic ideas is first demonstrated for a simple geometry; more automated analyses for a more general geometry follow.     

Electrical properties of Ta/sub 2/O/sub 5/ gate dielectric on strained-Si

High dielectric constant (high-k) thin Ta/sub 2/O/sub 5/ films have been deposited on tensilely strained silicon (strained-Si) layers using a microwave plasma enhanced chemical vapour deposition technique at a low temperature. The deposited Ta/sub 2/O/sub 5/ films show good electrical properties as gate dielectrics and are suitable for microelectronic applications. The feasibility of integration of strained-Si and high-k dielectrics has been demonstrated.     

The impact of trench isolation on latch-up immunity in bulknonepitaxial CMOS

Numerical simulations have been used to show that two-dimensional effects can improve the latch-up immunity of deep trench-isolated, bulk, nonepitaxial CMOS. It is observed that the holding voltage is strongly influenced by trench dimensions and layout, which affect the two-dimensional spreading resistance of the conductivity-modulated well and substrate regions, which also changes the parasitic bipolar current gain. To increase the holding voltage, design parameters that are unique to deep trench isolation have been identified. The theoretical understanding that has been obtained can be exploited to design latch-up-free submicrometer CMOS at high packing densities without using expensive epitaxial substrates     

Analysis of surface preparation treatments for coating tungsten carbide substrates with diamond thin films

The effect of various substrate surface treatments on (i) the pre-growth topography and composition of the treated substrate, and (ii) the quality of diamond thin films produced by hot-filament chemical vapour deposition on tungsten carbide substrates, is reported. Two different substrate grain sizes were subjected to various surface treatments. They were then examined for surface material composition and topography using scanning electron microscopy and X-ray diffraction (XRD). Subsequently, diamond films were deposited on the samples and their quality analysed by Raman spectroscopy and XRD techniques. These analyses do not indicate a strong dependence between the substrate grain size and film quality. However, the surface-treatment method affects the resulting substrate surface topography and film quality. This revised version was published online in November 2006 with corrections to the Cover Date.     

A low-voltage triggering SCR for on-chip ESD protection at outputand input pads

A novel silicon-controlled rectifier (SCR) structure for on-chip protection against electrostatic discharge (ESD) stress at output or input pads is presented. The SCR switches to an ON state at a trigger voltage determined by the gate length of an incorporated nMOS-like structure. Thus, the new SCR can be designed to consistently trigger at a voltage low enough to protect nMOS transistors from ESD. The capability of a protection circuit using the new SCR design is experimentally demonstrated. The tunability of the SCR trigger voltage with reference to the nMOS breakdown voltage is exploited to improve the human body model (HBM) ESD failure threshold of an output buffer from 1500 to 5000 V