Relationships between nocturnal activity, parental ratings of daytime activity and measues from the Children's Sleep Behaviour Scale.

Monitored the nocturnal activity levels of 20 boys and 20 girls (mean age 10.46 yrs) from 12:00 AM to 6:00 AM over 2 consecutive nights in their homes. Frequency of sleep-related behaviors based on retrospective parental ratings was assessed by the Children's Sleep Behavior Scale (CSBS). Children who were rated high on sleep behaviors with an observable motor component were also more active during the night, thereby validating the motor subscale of the CSBS. Nocturnal activity was associated with another CSBS-derived sleep score that included items with positive affective content, such as laughing and smiling while asleep. Children who showed bedtime resistance behaviors and complained of difficulty going to sleep were not more active during the night. Gender, age, and parental perception of daytime activity levels were not related to objective measures of nocturnal activity. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Psychological adjustment of children with sickle cell disease: Stability and change over a 10-month period.

Rates of poor psychological adjustment of children with sickle cell disease remained relatively constant over initial and follow-up assessment points. 50 children (aged 7–12 yrs) and their mothers completed the initial protocol. 30 children completed the follow-up plus 5 additional children and their mothers. These Ss were aged 7–24 yrs at follow-up. With initial levels of adjustment controlled, children's strategies for coping with pain accounted for a significant increment in child-reported symptoms and mother-reported internalizing behavior problems at follow-up beyond the contribution of illness and demographic parameters and follow-up interval. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Linking workplace and homeplace: Relations between the nature of adults' work and their parenting behaviors.

A total of 188 employed mothers and fathers and their 5–7 yr-old child participated in a study of the relations between the nature of adults' work and their parenting attitudes and behaviors (a line of research influenced by both socialization and stress perspectives). In general, positive features of work (i.e., complexity of work with people, challenge, and stimulation) tended to be associated with both self-report and observational measures of developmentally sound parenting (e.g., less harsh discipline, more warmth and responsiveness). Interaction effects indicated that gender of parent and child further condition these relations. Analyses partially support the interpretation that conditions of work influence parenting through their effect on mood but also suggest that certain conditions of work may directly socialize behavior in the parental role (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Protocol design and performance analysis for manufacturing messagespecification: A Petri net approach

The manufacturing message specification (MMS) is the ISO standard communication protocol specific to manufacturing. To analyze MMS design and performance, service unit automats are introduced to represent individual MMS services, while service connection Petri Nets (PNs) are constructed from these automats to describe MMS service connections and processes. This approach makes MMS protocol specification and analysis possible in terms of well-developed concepts and methods in PN theory. It leads to a distributed and hierarchical model of MMS software system by integrating service connection PNs. A generalized stochastic PN for MMS performance evaluation is obtained by incorporating service parameters and time factors into the model. A technique based on T-invariants is used to simplify the performance analysis     

Path tracking control of a manipulator considering torquesaturation

When the minimum-time trajectory of a manipulator along a geometrically prescribed path is planned taking into consideration the manipulator's dynamics and actuator's torque limits, at least one of the joints should be at the torque limit. The execution of such a trajectory by a conventional feedback control scheme results in torque saturation. Consequently, the tracking error cannot be suppressed and the manipulator may deviate from the desired path. In this paper, the author's propose a feedback control method for path tracking which takes the torque saturation into account. Based on the desired path, a coordinate system called path coordinates is defined. The path coordinates are composed of the component along the path and the components normal to the path. The equation of motion is described in terms of the path coordinates. Control of the components normal to the path is given priority in order to keep the motion of the manipulator on the path. Simulations of a two-degree-of-freedom manipulator show the effectiveness of this method     

A neural network control system with parallel adaptive enhancementsapplicable to nonlinear servomechanisms

In this paper, we present a technique for using an additional parallel neural network to provide adaptive enhancements to a basic fixed neural network-based nonlinear control system. This proposed parallel adaptive neural network control system is applicable to nonlinear dynamical systems of the type commonly encountered in many practical position control servomechanisms. Properties of the controller are discussed, and it is shown that if Gaussian radial basis function networks are used for the additional parallel neural network, uniformly stable adaptation is assured and the approximation error converges to zero asymptotically. In the paper, the effectiveness of the proposed parallel adaptive neural network control system is demonstrated in real-time implementation experiments for position control in a servomechanism with asymmetrical loading and changes in the load     

A novel scheme for protection of power semiconductor devicesagainst short circuit faults

Power semiconductor devices find wide application in modern power electronic converters. Protection of these devices against overload/short circuit conditions is of paramount importance. Present day protection topologies employing different circuits have invariably one main drawback in that the fault current reaches the set value before action is initiated to trip the system. This poses a severe stress on the device. Hence an adequate safety margin has to be necessarily provided to prevent excessive device stresses and care has to be taken to see that the device is operated well within its safe operating areas. The present paper proposes a method wherein the slope or rate of rise of the fault current is detected and once the slope exceeds the set reference, action is initiated to trip the system much before the fault current reaches dangerous levels. The method provides a fast means of detection of overload and short circuit currents and can be conveniently adopted for the protection of devices in power transistor/IGBT based inverters against short circuited load conditions or shoot through faults. The possible reduction of stresses in the power devices are also highlighted     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Evaluation technique of gate oxide damage

Gate oxide damage by plasma processing was evaluated using structures with various antenna lengths. The gate oxide damage by plasma processing was found to be monitored quantitatively by measuring the charge to breakdown, Q_BD. From the Q_BD measurements, we have confirmed that the degradation occurs during overetching, not in main etching. Plasma current was calculated from the decrease of Q_BD during the etching. The breakdown spot in the gate oxide was detected by photon emission and TEM. The LOCOS structure plays an important role for the degradation by plasma damage. In this paper, it is demonstrated that the Q_BD method is effective for realizing a highly reliable process against plasma damage