Formation of a geometric pattern with a mobile wireless sensor network

Mobile wireless sensor networks (MWSNs) will enable information systems to gather detailed information about the environment on an unprecedented scale. These self‐organizing, distributed networks of sensors, processors, and actuators that are capable of movement have a broad range of potential applications, including military reconnaissance, surveillance, planetary exploration, and geophysical mapping. In many of the foreseen applications, the MWSN will need to form a geometric pattern without assistance from the user. In military reconnaissance, for example, the nodes will be dropped onto the battlefield from a plane and land at random positions. The nodes will be expected to arrange themselves into a predetermined formation in order to perform a specific task. Thus, we present algorithms for forming a line, circle, and regular polygon from a given set of random positions. The algorithms are distributed and use no communication between the nodes to minimize energy consumption. Unlike past studies of geometric problems where algorithms are either tested in simulations where each node has global knowledge of all the other nodes or implemented on a small number of robots, the robustness of our algorithms has been studied with simulations that model the sensor system in detail. The simulations demonstrate that the algorithms are robust against random errors in the sensors and actuators. © 2004 Wiley Periodicals, Inc.     

Reversed Temperature-Dependent Propagation Delay Characteristics in Nanometer CMOS Circuits

The supply voltage to threshold voltage ratio is reduced with each new technology generation. The gate overdrive variation with temperature plays an increasingly important role in determining the speed characteristics of CMOS integrated circuits. The temperature-dependent propagation delay characteristics, as shown in this brief, will experience a complete reversal in the near future. Contrary to the older technology generations, the speed of circuits in a 45-nm CMOS technology is enhanced when the temperature is increased at the nominal supply voltage. Operating an integrated circuit at the prescribed nominal supply voltage is not preferable for reliable operation under temperature fluctuations. A design methodology based on optimizing the supply voltage for temperature-variation-insensitive circuit performance is proposed in this brief. The optimum supply voltage is 45% to 53% lower than the nominal supply voltage in a 180-nm CMOS technology. Alternatively, the optimum supply voltage is 15% to 35% higher than the nominal supply voltage in a 45-nm CMOS technology. The speed and energy tradeoffs in the supply voltage optimization technique are also presented     

Mixed oxide supported hydrodesulfurization catalysts—a review

Support effects form important aspect of hydrodesulfurization (HDS) studies and mixed oxide supports received maximum attention in the last two decades. This review will focus attention on studies on mixed oxide supported Mo and W catalysts. For convenience of discussion, these are divided into Al₂O₃ containing mixed oxide supports, TiO₂ containing mixed oxide supports, ZrO₂ containing mixed oxide supports and other mixed oxide supports containing all the rest. TiO₂ containing mixed oxides received maximum attention, especially TiO₂–Al₂O₃ supported catalysts. A brief discussion about their prospects for application to ultradeep desulfurization is also included. An overview of the available literature with emphasis on research carried out in our laboratory form the contents of this publication.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Unstructured tree search on SIMD parallel computers

We present new methods for load balancing of unstructured tree computations on large-scale SIMD machines, and analyze the scalability of these and other existing schemes. An efficient formulation of tree search on an SIMD machine consists of two major components: a triggering mechanism, which determines when the search space redistribution must occur to balance the search space over processors, and a scheme to redistribute the search space. We have devised a new redistribution mechanism and a new triggering mechanism. Either of these can be used in conjunction with triggering and redistribution mechanisms developed by other researchers. We analyze the scalability of these mechanisms and verify the results experimentally. The analysis and experiments show that our new load-balancing methods are highly scalable on SIMD architectures. Their scalability is shown to he no worse than that of the best load-balancing schemes on MIMD architectures. We verify our theoretical results by implementing the 15-puzzle problem on a CM-2 SIMD parallel computer     

Mathematical model for computer simulation and control of steelmaking

A dynamic model for computer simulation and control of steelmaking has been developed. It is essentially based on multicomponent mixed transport control theory with the incorporation of energy balance calculations. The model is applicable to both steelmaking in electric furnaces as well as in oxygen steelmaking converters. The adjustable parameters of the model for simulation of oxygen steelmaking are gas evolution rate (G_co). oxygen flux factor (F_o) and emulsification factor (EM). These simulation parameters, when combined with on-line measurement of off-gas composition and temperature, enable complete dynamic control of the process. The model developed is applied, as an example, to an industrially produced heat in a top blown oxygen steelmaking converter and the results of simulation are discussed.     

General formalism for the study of nonlinear pulse propagation in optical fibres

A general formalism for the study of nonlinear pulse propagation in optical fibres is presented. It is then applied to study the time evolution of a Gaussian laser pulse in a fibre with cubic and fifth-order nonlinearity in the index of refraction. The results are presented and discussed.