频谱分解技术在塔里木盆地北部TH地区碳酸盐岩缝洞型储层预测中的应用

本文从频谱分解技术的基本原理及计算方法入手,根据正演模型,通过对比缝洞型储层与地震反射特征的关系,总结出储层发育的反射特征,相应地精细调整频谱分解处理参数,进而进行预测。通过与钻井资料对比可知,频谱分解技术可以刻画不同频率强反射、弱反射的边界。     

OA系统中的工作流技术及其新的模式

本文在对工作流技术的理论、实现和应用研究的基础上,提出了审批平台中应用的工作流管理模型,详细讨论了该技术的实现方法,并提出了工作流技术的新模式.     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

气测录井定量快速色谱分析技术

为了推动气测录井定量快速色谱分析技术在钻井现场广泛应用,该文从定量快速色谱与常规色谱的比较入手,在阐述定量快速色谱仪工作原理的基础上,探讨了定量快速色谱技术三个方面的优势——薄油气层的发现与评价、快速钻进条件下发现油气层以及加入钻井液添加剂条件下识别真假油气显示。相信随着定量快速色谱分析技术的应用,油气层发现与评价的准确率会得到很大提高。     

Throughput analysis for multicast switches with multiple input queues

This letter analyzes the saturated throughput for multicast switches with multiple input queues per input port. Under the assumptions of a Poisson uniform traffic model and random packet scheduling policy, we derive the multicast switch saturated throughput under different fanouts. To verify the analysis, extensive simulations are conducted with different switch sizes and fanouts. It is shown that the theoretical analysis and the simulation results have a discrepancy less than 1.9%. Results from this letter can be used as a guidance to design the optimal queuing for multicast switches.     

自由曲面五坐标数控加工干涉检查

提出了一种新方法，用于环刀五坐标数控加工的干涉检查。该方法将干涉检查分为刀轴及侧刃干涉检查和端面干涉检查。首先将加工曲面分片，选取合适的初始点。然后利用自由曲面的微分特性，确定跟踪方向和步长，迅速计算出工件和刀具的最短距离，从而判断是否发生干涉。实验仿真表明，达到同样精度时，该算法计算效率远高于常规的三角面片法。     

流量比对等离子体基团分布和薄膜结构的影响

使用光强标定的发射光谱(AOES)测量了CHF3／C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加，成膜基团CF、CF2、CH等的相对密度增大，而刻蚀基团F的密度也会增加，从而使得a—C：F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明，在高CHF3流量下沉积的a—C：F薄膜中含有更高的C—F键成分。可见在a—C：F薄膜的制备中CHF3／(CHF3 C6H6)流量比是重要的控制参量。     

不倒翁式偏心防斜钻具的设计

目前所使用的各种钻具主要是靠钻具本身的重力来产生降斜力,在井斜角很小时,降斜力一般很小,在某些区块钻井时不能满足防斜要求。据此,设计了一种不倒翁式偏心防斜钻具。该钻具有1段钻铤,钻铤的两端各有1个偏心稳定器,钻铤外表面有一半圆形的偏心块,在钻铤和偏心块之间有轴承结构。利用不倒翁原理,当井斜超过一定值时,偏心块会在重力作用下自动停留在井眼低边,这样就可以将此处的钻柱顶到井眼的高边上去,从而产生一个很大的降斜力,使井斜得以有效控制。     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.