Successful Aging

This issue's Works in Progress department presents six abstracts for projects that are developing interesting solutions to the elderly's quality of life challenges. The first two abstracts discuss projects that will help provide the elderly with freedom and independence by instrumenting their environments with supportive technology. The next two abstracts discuss projects building specialized user interfaces for addressing some of the challenges associated with aging, such as vision impairment. The final two abstracts present projects that will aid independence for the elderly by providing remote monitoring and assistance.     

Direct gravure printing (DGP) method for printing fine-line electrical circuits on ceramics

The tendency toward higher packing densities and higher frequencies for telecommunication devices based on ceramic technology requires smaller dimensions for electrical wiring. Electrical thick-film circuits for ceramic and LTCC-substrates have, up to now, been printed with screen printing, where the printing lines width limit is about 125 /spl mu/m in mass production. A silicone polymer direct gravure printing (Si-DGP) process has been developed to perform smaller dimensions, down to 20 /spl mu/m lines width, for electrical circuitry. In the DGP process, the conductor paste is doctored to the grooves of the gravure and then it is pressed against the substrate. The paste is, thus, printed directly onto the substrate from the patterned gravure. The results showed that, using the DGP process, it was possible to print conductor lines down to 20 /spl mu/m in width. It was also noted that a 100% transfer of paste from the grooves of the gravure could be obtained with commercial pastes using the silicone polymer gravure. A dried thickness of up to 28 /spl mu/m was measured for the narrowest lines. Also conductor lines printed by the Si-DGP method were embedded inside LTCC-module.     

A model material approach to the study of fracture process zone of quasi-brittle materials

A new approach to study the fracture of quasi-brittle materials is introduced: the design and testing of model materials. By model material is understood a material with enlarged microstructure and which material parameters, such as stacking and mechanical properties of particles and cohesion force, can be fully controlled. In this paper a first example to the model materials approach is presented, consisting in 5 mm steel particles bonded in a precise stacking with an epoxy-based glue. It is shown how it is possible to correlate the different fracture mechanisms and ultimate peak load of the model material to the particle pair force and to the fracture process zone size. It is also seen how a quasi-brittle behaviour is produced in the presence of mechanisms that induced the crack to shift fracture planes, that is, in presence of energy dissipative mechanisms.     

Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 /spl times/ 64 pixel (300 /spl mu/m pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm/sup 2//V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.     

Nanoscale Crystallization in the Amorphous Alloy Fe79P14.2Si4.4Mn2.2V0.2 upon Pulsed Photon Annealing

The effect of pulsed photon annealing with energy densities from 1.4 to 42 J/cm² for various lengths of time on the structure of the amorphous alloy Fe₇₉P_14.2Si_4.4Mn_2.2V_0.2 was studied by x-ray diffraction, differential scanning calorimetry, and transmission electron microscopy. The results demonstrate that short-term irradiation with low energy densities leads to surface relaxation of the amorphous alloy, increases the strength of the surface layer, and reduces the internal-friction peak. Longer term photon annealing leads to crystallization of the alloy throughout the sample thickness.     

The interfacial microstructure of joined single crystal and polycrystalline alumina

The interfacial microstructures of 96 and 98% polycrystalline alumina joined with single crystal sapphire have been investigated in relation to the joining parameters. Joining has been evaluated based on either using a thin spin-on silica interlayer or by placing the alumina and sapphire in direct contact. The materials were joined by placing the coated or uncoated surfaces in contact and heating in the range of 1340–1475 °C with minimum external load. With the aid of a silica interlayer, sapphire and 98% polycrystalline alumina were successfully joined in 180 min at 1400 °C and above, while samples without a silica interlayer failed to join under these conditions. However, sapphire and 96% polycrystalline alumina were joined both with and without the use of silica interlayer. A variety of interfacial morphologies have been observed, including amorphous regions, fine crystalline alumina, and intimate contact between the sapphire and polycrystalline alumina.     

High-power 1320-nm wafer-bonded VCSELs with tunnel junctions

A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range.     

Binary sequences with low aperiodic autocorrelation for synchronization purposes

An evolutionary algorithm is used to find three sets of binary sequences of length 49-100 suitable for the synchronization of digital communication systems. Optimization of the sets are done by taking into consideration the type of preamble used in data frames and the phase-lock mechanism of the communication system. The preamble is assumed to be either a pseudonoise (PN) sequence or a sequence of 1s. There may or may not be phase ambiguity in detection. With this categorization, the first set of binary sequences is optimized with respect to aperiodic autocorrelation which corresponds to the random (PN) preamble without phase ambiguity case. The second and third sets are optimized with respect to a modified aperiodic autocorrelation for different figures of merit corresponding to the predetermined preamble (sequence of 1s) with and without phase ambiguity cases.     

On teletraffic applications to OBS

We provide teletraffic models for loss probability evaluation of optical burst switching (OBS). We show that the popular Engset formula is not exact for OBS modeling and demonstrate that in certain cases it is not appropriate. A new exact model is provided. The various models are compared using numerical results for various OBS alternatives with and without burst segmentation.