Preparation of multi-compositional gas sensing films by combinatorial solution deposition

Various compositions of gas sensing films were prepared by the combinatorial deposition of SnO₂, ZnO, and WO₃ sol solutions and their gas sensing behaviors were investigated. The film composition could be manipulated conveniently via the alternate dropping of different oxide sol solutions. From the correlation between film compositions and gas sensitivities, the selective detection of C₂H₅OH and CH₃COCH₃ in the presence of CO, C₃H₈, H₂, and NO₂ could be attained. In addition, the discrimination between C₂H₅OH and CH₃COCH₃, which is a challenging issue due to their similar chemical nature, becomes possible. This research demonstrates the precise design of the sensor-material composition for the selective gas detection via the combinatorial approach.     

新的启迪

说点心里的话，建筑设计对青年人来讲是一条漫长的道路。建筑是一个载体，有精神一面，也有物质一面。有些建筑师拿着模型或未建成的设计来炒作，为了求名，生怕别人不知道。这对个人是小事，但若贻误了青年学子，那就是不可取的。     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters     

Reliability and performance analysis of time – space – time switching networks with multiple separated space switches

Since electronic switching systems usually require very strict reliability requirements as well as good performance objectives, we need to jointly analyse the performance and reliability of switching systems. In this paper, we compare conventional time–space–time switches with single space switches with those with multiple separated space switches, from the viewpoints of reliability and performance. We consider time–space–time switching networks which consist of N incoming time switches, i.e. one NxN space switch, two (N/2)x(N/2) space switches, and four (N/4)x(N/4) space switches. We introduce a Markov reliability model to study the effect of failures and analyse the reliability and performance of three different types of switching networks in terms of average blocking probability and the mean time to unreliable operation, as we vary the offered traffic. As a result, T–S–T switching networks with multiple separated space switches exhibit better performance and reliability than those with single space switches.     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained     

Acidogenic fermentation of blended food‐waste in combination with primary sludge for the production of volatile fatty acids

The performance of a laboratory‐scale anaerobic acidogenic fermenter fed with a mixture of blended kitchen food‐waste and primary sludge from a sewage treatment plant was investigated for the production of volatile fatty acids (VFA). The operating variables for acidogenic fermentation were kitchen food‐waste content (10 and 25 wt %), hydraulic retention time (HRT: 1, 3 and 5 days), temperature (ambient: 18 ± 2 °C, and mesophilic: 35 ± 2 °C) and pH (varied from 5.2 to 6.7). The experimental results indicated that effluent VFA concentrations and VFA production rates were higher at ambient temperature than at mesophilic conditions. The net amount of VFA with 10 wt % food‐waste increased up to 920 mg dm^?3 with an increase of HRT, but contrasting results (a decrease of 2610 mg dm^?3) were found due to the conversion of VFA into biogas in the case of 25 wt % food‐waste, which increased significantly at HRT of 3–5 days. In terms of biogas composition (CO₂ and CH₄), the organic matter was converted into CO₂ through the oxidative pathway by facultative species at low temperature while mesophilic temperature and optimum pH (6.3–7.8) played a pivotal role in increasing rate of conversion of VFA into biogas by methanogenesis. Rates of VFA production and their conversion are dependent on the food‐waste content in the mixture. Yet, the higher concentration of food‐waste (25% compared with 10%) did not produce VFA proportionally due to the increased rate of conversion of VFA into gaseous products. The maximum VFA production rate (0.318 g VFA_produced g^?1 VS_fed day^?1) was achieved in the 10 wt % food‐waste at ambient temperature and at a 5‐day HRT. Copyright © 2005 Society of Chemical Industry     

Synthesis of minerals using alternative energy sources

A technology for the synthesis of synthetic minerals (using the example of spinels) using a low-temperature plasma flame is developed. The diagnostic properties of spinels are identified.     

水溶液辐射分解产物对金属材料腐蚀的影响

实验研究了水辐射分解作用对高放废物深地质处置容器材料的影响。在高放废物深地质处置库附近的地下水,受辐射线作用后分解出氧、氢和氧化产物(例如H_2O_2等),于是在高放废物容器周围形成一个氧化场,导致高放废物中的某些重要放射性核素(例如U,Np和Tc)易溶于水,并向远域迁移。本实验中的含FeSO_4(0.13 mol/L)水溶液在吸收剂量为0、20、60、180、500kGy的射线作用下,其氧化还原电位(Eh)值由+357mV增至+414 mV;在不同吸收剂量的射线作用下,金属Cu、金属Al、0.357 mv金属Fe和不锈钢(后者是我国拟采用的高放废物包装容器材料),在水溶液中的氧化侵蚀强度,分别比在无辐射情况下的大0.2-6.1倍。     

国际乳业的热点论题：蛋白质标准化

介绍了蛋白质的标准化这一国际乳品界正热的研究和讨论题目，综述了蛋白质标准化的必要性和世界上目前采用的方法，展望了膜技术在蛋白质标准化上的应用前景。     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested