Analysis and discussion on conduction current based on simultaneousmeasurement of TSC and space charge distribution

A new analysis of conduction current distributed in dielectrics based on simultaneous measurements of thermally stimulated current (TSC) and time dependent space charge distribution is proposed. A new system pulsed electro-acoustic (PEA) method has been developed to enable simultaneous measurement of the TSC and the dynamic space charge and electric field distributions as a function of temperature within insulators. With the new system, the relationship between the TSC and the time dependent electric field distribution in electron beam (e-beam) irradiated PMMA has been investigated. From the time dependent electric field, the displacement current in dielectrics is obtained. The TSC is a typical external current which is represented as an addition of the displacement current and a conduction current in dielectrics. This paper makes it clear that the conduction current as a function of position is determined by the simultaneous measurement of the external current and the dynamic space charge distribution     

Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearing in one convergent-beam electron diffraction (CBED) pattern. The analysis was performed with three steps. Firstly, the parameters alpha and beta were determined from the deviations of the HOLZ lines from the mirror symmetry perpendicular to the [001] direction. Secondly, the parameter c was determined from the distance between the intersections of the HOLZ lines, which have the same h and k indices but different l indices. Finally, the parameters a, b and gamma were determined simultaneously from several distances between the intersections of the HOLZ lines. The lattice parameters determined for the strained area were a = 0.611(2) nm, b = 0.615(1) nm, c = 0.6119(7) nm, alpha = 89.5(1) degrees, beta = 89.0(2) degrees and gamma = 89.1(2) degrees. This result implies that the cubic lattice of InAs is elongated approximately in the [111] direction and the exact lattice symmetry is triclinic. The same analysis procedure was applied to another two specimen areas. It was found that the areas have orthorhombic distortions with lattice parameters a = 0.607(2) nm, b = 0.604(1) nm and c = 0.6085(7) nm for one area, and with a = 0.607(2) nm, b = 0.605(1) nm and c = 0.6065(7) nm for the other area. It is should be emphasized that the present analysis of lattice distortions is immediately applicable to the other semiconductors, such as Si, SiGe or GaAs layers, without assuming any crystal system.     

Millimeter and submillimeter wave quasi-optical oscillator withGunn diodes

The grooved-mirror-type Fabry-Perot (GFP) oscillator was used for coherent power-combining of multiple elements in the millimeter- and submillimeter-wave region. The admittance of the Gunn diode in oscillation was measured experimentally in the millimeter-wave region to design the GFP oscillator. The gain characteristics of the diode were found at the frequencies from 42 to 48 GHz from the measured results. With this Gunn diode in the GFP resonator, oscillation was observed. The experimental results indicated that for impedance matching between the diode and the resonant cavity, the groove height must be adjusted     

Development of quasi-end-fired waveguide plastic dye laser

A quasi-end-fire (QEF) pumping scheme was proposed and studied as a novel laser-pumping-scheme for a laser-dye-doped plastic waveguide laser with distributed feedback. This pumping scheme resembled longitudinal pumping, but also has the advantage of controllable absorption length of the injected pump beam. A first demonstration of the QEF was performed and the pumping beam controlling was also investigated.     

Isolation and characterization of the ATF2 gene encoding alcohol acetyltransferase II in the bottom fermenting yeast Saccharomyces pastorianus

The ATF2 gene encodes alcohol acetyltransferase II, which catalyses the synthesis of isoamyl acetate from acetyl coenzyme A and isoamyl alcohol. To characterize the ATF2 gene from the bottom fermenting yeast Saccharomyces pastorianus, the S. pastorianus ATF2 gene was cloned by colony hybridization using the S. cerevisiae ATF2 gene as a probe. When an atf1 null mutant strain was transformed with a multi-copy plasmid carrying the S. pastorianus ATF2 gene, the AATase activity of this strain was increased by 2.5-fold compared to the control. The S. pastorianus ATF2 gene has 99% nucleic acid homology in the coding region and 100% amino acid homology with the S. cerevisiae ATF2 gene. Southern blot analysis of chromosomes separated by pulse-field gel electrophoresis indicated that the ATF2 gene probe hybridized to chromosome VII in S. cerevisiae and to the 1100 kb chromosome in S. pastorianus. As S. pastorianus is thought to be a hybrid of S. cerevisiae and S. bayanus, the S. bayanus-type gene, which has a relatively low level of homology with the S. cerevisiae-type gene, is also usually detected. Interestingly, an S. bayanus-type ATF2 gene could not be detected. These results suggested that the cloned ATF2 gene was derived from S. cerevisiae. Analysis using an ATF2-lacZ fusion gene in S. pastorianus showed that expression of the ATF2 gene was relatively lower than that of the ATF1 gene and that it is repressed by aeration but activated by the addition of unsaturated fatty acids. The S. pastorianus ATF1, Lg-ATF1 and ATF2 Accession Numbers in the DDBJ Nucleotide Sequence Database are D63449, D63450 and D86480, respectively.     

Effect of silver content on thermal fatigue life of Sn-xAg-0.5Cu flip-chip interconnects

The thermal fatigue properties of Sn-xAg-0.5Cu (x=1, 2, 3, and 4 in mass%) flip-chip interconnects were investigated to study the effect of silver content on thermal fatigue endurance. The solder joints with lower silver context (x=1 and 2) had a greater failure rate compared to those with higher silver content (x=3 and 4) in thermal fatigue testing. Cracks developed in the solders near the solder/chip interface for all joints tested. This crack propagation may be mainly governed by the nature of the solders themselves because the strain-concentrated area was similar for tested alloys independent of the silver content. From the microstructural observation, the fracture was a mixed mode, transgranular and intergranular, independent of the silver content. Higher silver content alloys (x=3 and 4) had finer Sn grains before thermal cycling according to the dispersion of the Ag₃Sn intermetallic compound, and even after the cycling, they suppressed microstructural coarsening, which degrades the fatigue resistance. The fatigue endurance of the solder joints was strongly correlated to the silver content, and solder joints with higher silver content had better fatigue resistance.     

Optimization of L-lactic acid feeding for the production of poly-D-3-hydroxybutyric acid by Alcaligenes eutrophus in fed-batch culture

We investigated optimization of the feeding of L-lactic acid for the production of poly-D-3-hydroxybutyric acid [P(3HB)] by Alcaligenes eutrophus in a fed-batch culture system. An acidic substrate solution was fed automatically so as to maintain the pH of the culture liquid at 7.0. Feeding of a substrate solution containing 45% (w/v) L-lactic acid, 6.2% (w/v) sodium L-lactate, 5.8% (w/v) ammonia water and 1.8% (w/v) potassium phosphate [at a molar ratio of carbon to nitrogen (C/N molar ratio) of 10], allowed the L-lactate concentration in the culture liquid to be maintained at approximately 2 g/l and the cell concentration reached 27.4 g/l after 15 h of cultivation. To promote P(3HB) production, a two-stage fed-batch culture consisting of a culture for cell growth and one for P(3HB) accumulation was carried out. When the substrate solution, whose C N molar ratio was 23, was fed during the P(3HB) accumulation phase, the cell concentration and the P(3HB) content in the cells reached 103 g/l and 57.6% (w/w), respectively, in 51.5 h.     

A 62-ns 16-Mb CMOS EPROM with voltage stress relaxation technique

To meet the increasing demand for higher-density and faster EPROMs, a 16-Mb CMOS EPROM has been developed based on 0.6-μm N-well CMOS technology. In scaled EPROMs, it is important to guarantee device reliability under high-voltage operation during programming. By employing internal programming-voltage reduction and new stress relaxation circuits, it is possible to keep an external programming voltage V_pp of 12.5 V. The device achieves a 62-ns access time with a 12-mA operating current. A sense-line equalization and data-out latching scheme, made possible by address transition detection (ATD), and a bit-line bias circuit with two types of depletion load led to the fast access time with high noise immunity. This 16-Mb EPROM has pin compatibility with a standard 16-Mb mask-programmable ROM (MROM) and is operative in either word-wide or byte-wide READ mode. Cell size and chip size are 2.2 μm×1.75 μm and 7.18 mm×17.39 mm, respectively